• Title/Summary/Keyword: RuO$_2$

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Effect of Deposition Temperature and Oxygen on the Growth of $RuO_2$ Thin Films Deposited by Metalorganic Chemical Vapor Deposition (금속유기 화학증착법으로 증착시킨 $RuO_2$박막의 성장에 미치는 증착온도와 산소의 영향)

  • 신웅철;윤순길
    • Journal of the Korean Ceramic Society
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    • v.34 no.3
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    • pp.241-248
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    • 1997
  • RuO2 thin films were deposited on SiO2(1000$\AA$)/Si and MgO(100) single crystal substrates at low tem-peratures by hot-wall metalorganic chemical vapor deposition(MOCVD), and effects of deposition paramet-ers on the properties of the thin films were investigated. RuO2 single phase was obtained at lower de-position temperature of 25$0^{\circ}C$. RuO2 thin films deposited onto SiO2(1000$\AA$)/Si substrates showed a random orientation, and RuO2 films onto MgO(100) single crystals showed the (hk0) orientation. The crystallinity and resistivity of RuO2 thin films increased and decreased with increasing deposition temperature, respec-tively. The resistivity of RuO2 thin films decreased with decreasing the flow rate. The resistivity of the 2600$\AA$-thick RuO2 thin films deposited with O2 flow rate of 50 sccm at 35$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm, and they could be applicable to bottom electrodes of high dielectric materals.

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Characterization of $RuO_2$ Thin Films by Hot-wall Metal Organic Chemical Vapor Deposition (Hot-wall MOCVD에 의한 $RuO_2$ 박막의 특성)

  • 신웅철;윤순길
    • Journal of the Korean Ceramic Society
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    • v.33 no.9
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    • pp.969-976
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    • 1996
  • RuO2 thin films were deposited on SiO2(1000 $\AA$)/Si by hot-wall Metal Organic Chemical Vapor Depositon. The crystallinity of RuO2 thin films increased with increasing deposition temperature and the preferred orienta-tion of RuO2 films converted (200) plane to (101) plane with increasing film thicknesses. Such a change in preferred orientation was influenced on the crystallographic structure and the residual stress of RuO2 thin films. The resistivity of the 2700$\AA$-thick RuO2 thin films deposted at 30$0^{\circ}C$ was 52.7$\mu$$\Omega$-cm and they could be applicable to bottom electrodes of high dielectric materials. However the resistivity of RuO2 thin films increased with decreasing film thicknesses. The grain size and the resistivity of RuO2 thin films were densified with increasing the annealing temperature and showed the decrease of resistivity.

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Characteristics of $RuO_2$/n-GaN Schottky Diode ($RuO_2$/n-GaN 구조의 Schottky Diode 특성)

  • Kim, Dong-Sik
    • 전자공학회논문지 IE
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    • v.46 no.3
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    • pp.1-5
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    • 2009
  • In this paper, we study the electrical characteristics of $RuO_2$/n-GaN Schottky diodes fabricated by using electrochemical metallization. The solution for GaN Schottky electrodes of $RuO_2$ is perchloric acid($HClO_4$). Thickness of $RuO_2$ layer depend on supplied voltage and dipping time. We verified the possibility of the rectifying and non-rectifying devices' electrode which was depend on the thickness of $RuO_2$ layer.

Fabrication and Physical Properties of $RuO_2$ Thin Films ($RuO_2$ 박막의 제조와 물성)

  • 서동주;이재연;김건호
    • Journal of the Korean Vacuum Society
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    • v.3 no.4
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    • pp.442-448
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    • 1994
  • 용액분무법으로 RuO2 박막을 석영 기판위에 성장시켰다. RuO2 박막의 결정구조는 정방 구조이 며 격자상수 a0=4.508 A, c0=3.092 A 이였다. RuO2 박막은 금속성 전도성을 나타냈다. RuO2박마의 광흡 수도는 후열처리함에 따라 증가하였고 박막의 광흡수도의 최소값은 후열처리 온도에 의존하지 않으며 에너지로 환산하면 ∼2.0eV로 거의 일정하였다. RuO2 박막의 후열처리의 온도와 후열처리 분위기가 기 판위에 성장된 RuO2 박막의 표면형태 grain 크기 grain 경계폭 전기적특성등에 영향을 미쳤다. RuO2 박 막이 실험실내의 공기중에 노출됨으로서 시료의 표면에 S와 C가 물리 흡착되었으며 sputtering 시간이 증가함에 따라 Ar+ 이온 빔의 충겨으로 RuO2가 부분적으로 환원되어 O원자의 피크 대 피크 높이가 감 소하여 O/Ru 의피크 높이의 비가 낮게 관측되었다.

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Effect of RuO$_2$ Thin Film Microstructure on Characteristics of Thin Film Micro-supercapacitor ($RuO_2$박막의 미세 구조가 박막형 마이크로 슈퍼캐패시터의 특성에 미치는 영향)

  • Kim, Han-Ki;Yoon, Young-Soo;Lim, Jae-Hong;Cho, Won-Il;Seong, Tae-Yeon;Shin, Young-Hwa
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.671-678
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    • 2001
  • All solid-state thin film micro supercapacitor, which consists of $RuO_2$/LiPON/$RuO_2$ multi layer structure, was fabricated on Pt/Ti/Si substrate using a $RuO_2$ electrode. Bottom $RuO_2$ electrode was grown by dc reactive sputtering system with increasing $O_2/[Ar+O_2]$ ratio at room temperature, and a LiPON electrolyte film was subsequently deposited on the bottom $RuO_2$ electrode at pure nitrogen ambient by rf reactive sputtering system. Room temperature charge-discharge measurements based on a symmetric $RuO_2$/LiPON/$RuO_2$ structure clearly demonstrates the cyclibility dependence on the microstructure of the $RuO_2$ electrode. Using both glancing angle x-ray diffraction (GXRD) and transmission electron microscopy (TEM) analysis, it was found that the microstructure of the $RuO_2$ electrode was dependent on the oxygen flow ratio. In addition, x- ray photoelectron spectroscopy(XPS) examination shows that the Ru-O binding energy is affected by increasing oxygen flow ratio. Furthermore, TEM and AES depth profile analysis after cycling demonstrates that the interface layer formed by interfacial reaction between LiPON and $RuO_2$ act as a main factor in the degradation of the cyclibility of the thin film micro-supercapacitor.

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Effects of Specific Surface Area of RuO2 on the Electrical Properties of Thick Film Resistors (RuO2의 비표면적 변화가 후막저항체의 전기적 성질에 미치는 영향)

  • 이영규
    • Journal of the Microelectronics and Packaging Society
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    • v.1 no.1
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    • pp.41-50
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    • 1994
  • RuO2 분말의 비표면적이 후막저항체의 전기적 특성에 미치는 영향을 규명하기 위하 여 비표면적이 서로다른 RuO2 분말을 이용하여 RuO2 함량을 다양하게 후막저항을 형성하 고 그들의 전기적 특성을 저항체 막의 미세조직과 관련하여 고찰하였다. 그 결과 후막저항 체의 전기적 특성은 소성과정에서 RuO2 의 비표면적과 함량에 따라 도전통로를 통하여 발 달하여 소결접촉과 비소결접촉의 수와 그 비에 크게 의존함을 확인하였다.

Anisotropic Silicon Etching Using $RuO_2$ Thin Film as a Mask Layer by TMAH Solution ($RuO_2$를 마스크 층으로 TMAH에 의한 이방성 실리콘 식각)

  • 이재복;오세훈;홍경일;최덕균
    • Journal of the Korean Ceramic Society
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    • v.34 no.10
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    • pp.1021-1026
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    • 1997
  • RuO2 thin film has reasonably good conductivity and stiffness and it is thought to substitute for the cantilever beam made up of Pt and Si3N4 double layers in microactuators. Therefore, anisotopic Si etching was performed using RuO2 thin film as a mask layer in 25 wt. % TMAH water solution. In the etching temperature ranging from 6$0^{\circ}C$ to 75$^{\circ}C$, the etch rates of all the crystallographic directions increased linearly as the etching temperature increased. The etch rate ratio(selectivity) of [111]/[100] which varied from 0.08 to 0.14, was not sensitive to temperature. The activation energies for [110] direction, [100] direction and [111] direction were 0.50, 0.66 and 1.04eV, respectively. RuO2 cantilever beam with a clean surface was formed at the etching temperatures of 6$0^{\circ}C$ and $65^{\circ}C$. But the damages due to formation of pin holes on RuO2 surface were observed beyond 7$0^{\circ}C$. The tensile stress of RuO2 thin films caused the cantilever bending upward. As a result, it was demonstrated that the formation of conducting oxide RuO2 cantilever beam which can replace the role of an electrode and supporting layer could be possible by TMAH solution.

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The study of the properties of PZT thin films deposited on $Ru/RuO_{2}$ electrode ($Ru/RuO_{2}$ 이중 전극위에 성장한 PZT 박막의 특성에 관한 연구)

  • Choi, Jang-Hyun;Kang, Hyun-Il;Park, Young;Somg, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.394-397
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    • 2001
  • In this paper, in-situ deposited $Ru/RuO_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and $RuO_2$ bottom electrodes are also investigated. The use of $Ru/RuO_2$ hybrid electrodes showed better electrical properties in compression with $RuO_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/$RuO_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of $7.2C/cm^2$ and 46.35 kV/cm, respectively.

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Thermal Stability of $\textrm{RuO}_2$ Thin Film Annealed at High Temperature in Oxygen Atmosphere ($\textrm{RuO}_2$ 박막의 산소 분위기 열처리시 열적 안정성에 관한 연구)

  • O, Sang-Ho;Park, Chan-Gyeong;Baek, Hong-Gu
    • Korean Journal of Materials Research
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    • v.8 no.12
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    • pp.1090-1098
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    • 1998
  • $RuO_2$ thin films were deposited on Si and Ru/Si substrates by rf magnetron reactive sputtering and annealed in oxygen atmosphere(1atm) to investigate their thermal stability and diffusion barrier property. $RuO_2$ thin films were thermally stable up to 700\ulcorner for 10min. in oxygen atmosphere and showed excellent barrier property against the interdiffusion of silicon and oxygen. After annealing at $750^{\circ}C$ , however, volatilization to higher oxide occurred at the surface and inside of $RuO_2$ thin film and diffusion barrier property was also deteriorated. When annealed at $800^{\circ}C$, $RuO_2$thin film showed a different microstructure from that of $RuO_2$ thin film annealed at 75$0^{\circ}C$. It is likely that surface defect structure of $RuO_2$, $RuO_3$, and excess oxygen had an influence on the mode of volatilization with increasing annealing temperature.

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Methanol Electro-Oxidation of Electro-Spun RuO2 Nanowire Supported Pt Catalysts (Electro-Spun RuO2 나노선 지지체에 담지된 Pt촉매의 메탄올 Electro-Oxidation 특성)

  • Yeom, Yong-Sik;Ahn, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.21 no.8
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    • pp.419-424
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    • 2011
  • Pt nanoparticle catalysts incorporated on $RuO_2$ nanowire support were successfully synthesized and their electrochemical properties, such as methanol electro-oxidation and electrochemically active surface (EAS) area, were demonstrated for direct methanol fuel cells (DMFCs). After fabricating $RuO_2$ nanowire support via an electrospinning method, two different types of incorporated Pt nanoparticle electrocatalysts were prepared using a precipitation method via the reaction with $NaBH_4$ as a reducing agent. One electrocatalyst was 20 wt% Pt/$RuO_2$, and the other was 40 wt% Pt/$RuO_2$. The structural and electrochemical properties of the Pt nanoparticle electrocatalysts incorporated on electrospun $RuO_2$ nanowire support were investigated using a bright field transmission electron microscopy (bright field TEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry. The bright field TEM, XRD, and XPS results indicate that Pt nanoparticle electrocatalysts with sizes of approximately 2-4 nm were well incorporated on the electrospun $RuO_2$ nanowire support with a diameter of approximately 50 nm. The cyclic voltammetry results showed that the Pt nanoparticle catalysts incorporated on the electrospun $RuO_2$ nanowire support give superior catalytic activity in the methanol electro-oxidation and a higher electrochemically active surface (EAS) area when compared with the electrospun Pt nanowire electrocatalysts without the $RuO_2$ nanowire support. Therefore, the Pt nanoparticle catalysts incorporated on the electrospun $RuO_2$ nanowire support could be a promising electrode for direct methanol fuel cells (DMFCs).