• Title/Summary/Keyword: RuO$_2$

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The characteristics of $(Ba_{0.5}Sr_{0.5})TiO_3$ thin films deposited on $RuO_2$ bottom electrodes ($RuO_2$하부전극상에 증착된 $(Ba_{0.5}Sr_{0.5})TiO_3$박막의 특성)

  • 백수현;박치선;마재평
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.8 no.3
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    • pp.407-410
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    • 1998
  • The characteristics of $(Ba,Sr)TiO_3$[BST] thin films with the variation of $O_2/Ar$ ratio in sputtering gas deposited on $RuO_2$ bottom electrode were investigated. Dielectric constant of BST film increases from 135 to 190 with increasing oxygen partial pressure from 10 to 50, which is mainly due to the improved crystallinity of BST film. The instability of $RuO_2$ surface in $BST/RuO_2$ interface and the increase in the surface roughness of BST thin films with higher $O_2/Ar$ ratio appeared to play an important roles on the degradation of the leakage current characteristics of $Al/BST/RuO_2$ capacitor with various $O_2/Ar$ ratio in sputtering gas. As a consequence, the leakage current of BST thin film showed the lowest value of $1.9{\times}10^{-7}\; A/{\textrm}{cm}^2$ at $O_2/Ar{\approx}1/9$.

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Development of templated RuO2 nanorod and nanosheet electrodes to improve the electrocatalytic activities for chlorine evolution (전기적 염소 발생 촉매활성을 위한 성형된 루테늄 산화물 나노로드와 나노시트 전극의 개발)

  • Luu, Tran Le;Kim, Choonsoo;Yoon, Jeyong
    • Journal of Korean Society of Water and Wastewater
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    • v.31 no.5
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    • pp.373-381
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    • 2017
  • $RuO_2$ is a common active component of Dimensionally Stable Anodes (DSAs) for chlorine evolution that can be used in wastewater treatment systems. The recent improvement of chlorine evolution using nanostructures of $RuO_2$ electrodes to increase the treatment efficiency and reduce the energy consumption of this process has received much attention. In this study, $RuO_2$ nanorod and nanosheet electrodes were simply fabricated using the sol-gel method with organic surfactants as the templates. The obtained $RuO_2$ nanorod and nanosheet electrodes exhibit enhanced electrocatalytic activities for chlorine evolution possibly due to the active surface areas, especially the outer active surface areas, which are attributed to the increase in mass transfers compared with a conventional nanograin electrode. The electrocatalytic activities for chlorine evolution were increased up to 20 % in the case of the nanorod electrode and 35% in the case of the nanosheet electrode compared with the nanograin electrode. The $RuO_2$ nanorod 80 nm in length and 20-30 nm in width and the $RuO_2$ nanosheet 40-60 nm in length and 40 nm in width are formed on the surface of Ti substrates. These results support that the templated $RuO_2$ nanorod and nanosheet electrodes are promising anode materials for chlorine evolution in future applications.

Failure Mechanism of $RuO_2$ Thick Film Power Resistor ($RuO_2$ 후막 전력 저항기의 고장 메커니즘)

  • Choi, Sung-Soon;Lee, Kwan-Hoon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.311-312
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    • 2008
  • $RuO_2$ 계열의 후막재료를 사용한 저항의 신뢰성시험을 실시하고 주요 고장 메커니즘을 확인하였다. 사용된 소자의 기판은 AlN 세라믹 기판이며, 후막재료로 $RuO_2$ paste를 프린팅하고 소결시킨 구조의 고주파용 저항(RF Termination)이다. 주요 고장 메커니즘은 후막(Thick Film)의 특성변화, 기판의 특성변화, 전극-후막 간의 접촉특성변화, Trimming 부위의 열화, 열팽창계수 차이에 의한 기계적 파손 등으로 알려져 있으며, 본 실험에서는 고장모드 분석을 위해 과부하시험, 고온동작시험 등을 포함한 신뢰성 환경시험과 수명시험을 실시하였다. 각 시험 결과 수명시험 후 전극-후막 간의 접합부 파괴가 관찰되었고, 열충격 시험 결과 후막의 crack이 관찰되었다.

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산화루테늄(RuO2) 제조기술

  • 이강명;이기웅;정경원
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • pp.281-283
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    • 1996
  • 전자제품의 경박 단소화에 필수 부품인 칩저항기, HIC 등의 제조 기술은 급속한 성장을 이룬 반면에 가장 중요한 특성을 발현하는 전극 재료 및 저항 재료의 제조는 기술적으로 취약한 부분이다. RuO2와 Pb2Ru2O5.5는 저항 페이스트의 가장 중요한 원재료로서 저항 편차, 온도저항계수(TCR), 전압저항계수(VCR), NOISE 등의 전기적 특성과 페이스트이 흐름성, 보존 안정성 등의 작업성에 큰 영향을 미친다. 외국에서 산화 루테늄 분말 제조에 대한 많은 연구가 진행되어 오고 있으나 대부분 출발 물질을 염화 루테늄을 사용하여 RuO2 분말을 제조하고 있다. 이렇게 제조된 RuO2 분말은 전자 재료에 악영향을 미치는 염소이온이 잔류할 가능성이 높다. 본 연구에서는 Ru metal에서 루테늄산염을 만들어 위의 문제를 최소화 하였고, 전기적 특성이 우수한 고분산 초미립의 RuO2를 얻기 위해 산화, 환원, 정제, 배소 등의 제조 공정에 있어서 최적 조건을 고찰 하였다.

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$RuO_2$ Related Schottky contact for GaN/AlGaN device

  • Jung, Byung-Kwon;Kim, Jung-Kyu;Lee, Jung-Hee;Hahm, Sung-Ho
    • Proceedings of the Korean Society Of Semiconductor Equipment Technology
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    • pp.85-90
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    • 2002
  • $RuO_2$/GaN and related contacts were investigated for Schottky contacts in GaN-Based optical and electronic devices. We demonstrated that an $RuO_2$ film forms a stable Schottky contact on a GaN layer with a barrier height (${\Phi}_B$) of 1.46 eV and transmittance of 70% in the visible and near UV region. $RuO_2$/GaN Schottky diode showed a breakdown at over -50V and leakage current of only 0.3 nA at -5V. The $RuO_2$/GaN Schottky type photodetector had the UV/Visible rejection ratio of over $10^5$ and the responsivity of 0.23 A/W at 330 nm. The $RuO_2$ gate AlGaN/GaN EFET exhibited high drain current ($I_d$) of 689.3 mA/mm and high transconductance ($g_m$) of 197.4 mS/mm. Cut-Off frequency ($f_t$) and maximum operating frequency ($f_{max}$) were measured as 27.0 GHz and 45.5 GHz, respectively.

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전자싸이클로트론공명플라즈마 화학기상증착법에 의한 PZT 박막의 증착 및 전기적 특성 연구

  • Jeong, Su-Ok;Lee, Won-Jong
    • Ceramist
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    • v.3 no.1
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    • pp.45-52
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    • 2000
  • 전자싸이클로트론공명플라즈마 화학기상증착법(ECR-PECVD)에 의한 Pt 및 $RuO_2$ 기판에서의 PZT 박막의 증착특성 및 전기적 특성을 조사하였다. $RuO_2$ 기판에서는 Pt 기판에 비하여 Pb-관련 이차상이 형성되기 쉬웠고, PZT 페로브스카이트 핵생성이 어려웠다. 하지만, $RuO_2$ 기판에서도 금속유기 원료기체의 정확한 유량조절(특히, $Pb(DPM)_2$ 유량)과 Ti-oxide 씨앗층의 도입을 통하여 $450^{\circ}C$의 비교적 낮은 증착온도에서 단일한페로브스카이트 박막 제조가 가능하였으며, $RuO_2$ 기판에서도 미세구조가 향상된 PZT 박막의 경우 $10^{-6}A/cm^2@100kV/cm$의 우수한 누설전류 특성을 나타내었다. 4 가지 전극배열의 PZT 커패시터들 중에서 $RuO_2//RuO_2$ 커패시터는 누설전류밀도가 $10^{-4}A/cm^2@100kV/cm$ 정도로 높았지만, 피로현상은 나타나지 않았다. 일방향 전계 (unipolar) 피로특성에서 나타난 polarization-shift 현상과 양방향 전계 (bipolar) 피로특성의 온도의존성 결과는 PZT 박막내 charged defect의 이동이 어려움을 나타내었다. Bipolar 신호에 의한 피로현상은 인가전계에 의한 분극반전 과정에서 Pt 계면에서 charged defect의 형성과 관련이 있는 것으로 판단되었다. 또한, 상하부 전극물질 이 다른 경우에는 상하부 계면의 charged defect 밀도에 차이가 생겨 내부전계가 형성되는 것으로 판단되었다.

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Effect of Binder Glass Crystallization on Electrical Properties in $RuO_2$-Thick Film Resistor

  • Sungmin Kwon;Kim, Cheol-Young
    • The Korean Journal of Ceramics
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    • v.2 no.1
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    • pp.33-38
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    • 1996
  • In thick film resistors, the characteristics of the frit and the reaction between glass frit and conductor material play an important role for their electrical properties. In this study, various glass frits in the system of $60RO{\cdot}20SiO_2$ $15B_2O_3{\cdot}5Al_2O_3$(RO=PbO, ZnO, CdO; mole%) were mixed with $RuO_2$ and coated on 96% alumina substrate. Only the glass frit containing PbO was reacted with $RuO_2$in$RuO_{2+}$-thick film resistor and produced the new crystalline phase of $Pb_2Ru_2O_{65}$. Their electrical resistivities strongly depend on the amount of $Pb_2Ru_2O_{65}$ crystalline phase obtained, which varied with firing temperature. The sheet resistivities of these resistors were varied from $10^3\; to\; 10^6\;{\Omega}/{\Box}$ depending on heat treatment, and the absolute value of TCR was decreased as the heat treatment temperature increaed. However, $RuO_2$ did not reacted with the glass frits containing ZnO nor CdO, and the resulting showed very high sheet resistivities.

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Binary Metal Oxide ($IrO_2-RuO_2$) pH Sensor Prepared by Sol-gel Method (Sol-gel 법을 이용한 이성분 금속산화물 ($IrO_2-RuO_2$) pH 센서)

  • Lee, Jeong-Ran;Oh, Se-Lim;Han, Won-Sik;Hong, Tae-Kee
    • Journal of the Korean Applied Science and Technology
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    • v.31 no.2
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    • pp.190-196
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    • 2014
  • The sol-gel method was used to prepare binary metal oxide ($IrO_2-RuO_2$) pH sensor. The electrodes that mole percent compositions (mol%) of $IrO_2$ and RuO2 were 70:30 and 30:70 were selected. The characterizations of Nernstian response over pH range, response rate, interference on alkaline metals and reproducibility were investigated. Also the electroanalytical properties of these electrodes were evaluated in comparison with a commercial glass pH electrode. The composition of $IrO_2:RuO_2$ 70:30 mol% was chosen as better electrode formulation. The electrode was not susceptible to the action of interfering ions such as $Li^+$, $Na^+$ and $K^+$.

Fabrication and characteristics of NTC thermistor for low temperature sintering (저온 소결용 NTC 서미스터의 제조 및 특성)

  • Koo, Bon Keup
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.1
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    • pp.28-37
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    • 2018
  • In order to study the NTC thermistor that can be fired at low temperature, the influence of the lead free glass frit and $RuO_2$ addition on the electrical properties of the NTC thermistor of $Mn_{1.85}Ni_{0.25}Co_{0.9}O_4$ basic composition was studied. The sintering characteristics of the specimen sintered at $1000^{\circ}C$ with 10 wt% frit added to the basic NTC composition were similar to those of the specimen sintered at $1200^{\circ}C$ without frit. However, as the amount of frit increased, the electrical resistivity and B constant were increased. In order to reduce the resistance, NTC thermistor was prepared by adding 0, 2, and 5 wt% of $RuO_2$ to the composition containing 10 wt% of frit and sintered at $1000{\sim}1200^{\circ}C$, and sintering and electrical properties were measured. The electrical resistivity and the B constant tended to decrease with increasing $RuO_2$ content. However, the resistivity was the lowest at sintering temperature of $1000^{\circ}C$ and the resistance increased with increasing sintering temperature after 5 wt% $RuO_2$ addition. The NTC thermistor sintered at $1000^{\circ}C$ with 10 wt% frit and 5 wt% $RuO_2$ in the composition of NTC showed similar electrical properties and sintering characteristics when sintered at $1200^{\circ}C$ without added frit.

Synthesis and Electrochemical Characterization of Porous Co3O4/RuO2 Composite (다공성 Co3O4/RuO2 복합체 합성 및 전기화학적 특성)

  • Lim, Hye-Min;Ryu, Kwang-Sun
    • Korean Journal of Materials Research
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    • v.22 no.3
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    • pp.118-122
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    • 2012
  • We synthesized porous $Co_3O_4/RuO_2$ composite using the soft template method. Cetyl trimethyl ammonium bromide (CTAB) was used to make micell as a cation surfactant. The precipitation of cobalt ion and ruthenium ion for making porosity in particles was induced by $OH^-$ ion. The porous $Co_3O_4/RuO_2$ composite was completely synthesiszed after anealing until $250^{\circ}C$ at $3^{\circ}C$/min. From the XRD ananysis, we were able to determine that the porous $Co_3O_4$/RuO2 composite was comprised of nanoparticles with low crystallinity. The shape or structure of the porous $Co_3O_4/RuO_2$ composite was studied by FE-SEM and FE-TEM. The size of the porous $Co_3O_4/RuO_2$ composite was 20~40 nm. From the FE-TEM, we were able to determine that porous cavities were formed in the composite particles. The electrochemical performance of the porous $Co_3O_4/RuO_2$ composite was measured by CV and charge-discharge methods. The specific capacitances, determined through cyclic voltammetry (CV) measurement, were ~51, ~47, ~42, and ~33 F/g at 5, 10, 20, and 50 mV/sec scan rates, respectively. The specific capacitance through charge-discharge measurement was ~63 F/g in the range of 0.0~1.0 V cutoff voltage and 50 mAh/g current density.