• Title, Summary, Keyword: SU-8 Photoresist

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SU-8 Mold Fabrication with Low Internal Stress and High Aspect Ratio for UV LIGA Process (고 형상비 UV LIGA 공정을 위한 낮은 내부응력의 SU-8 도금틀 제작)

  • Jang, Hyeon-Gi;Kim, Yong-Gwon
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.48 no.8
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    • pp.598-604
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    • 1999
  • This paper describes the research to minimize the film stress and maximize the aspect ratio of photoresist structure, especially about SU-8 for electroplating mold. UV LIGA process using SU-8 allows fabricating high aspect ratio polymer structures. However, it is hard to get fine patterns in the high aspect ratio structures because of high internal stress and difficulty of removing SU-8. The purpose of this paper is to setup the process condition for the obtainment of both low film stress and high aspect ratio and to find design rules that make the pattern be less dependent on stress problem. Firstly, the process of heat treatment and exposure of SU-8 are proposed. These two conditions control the amount of cross-linkage in polymer structure, which is the most important parameter of both pattern generation and remaining stress. Heat treatment is dealed with soft bake and post-exposure-bake. Temperature and time duration of each step are varied with heat treatment condition. Some test patterns are fabricated to evaluate the proposed process. Nickel electroplating is performed with the mold fabricated through the proposed process to confirm the SU-8 as a good electroplating mold.

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Fabrication of EHD(Electrohydrodynamic) nozzle using surface hydrophobic coating and SU-8 photoresist (SU-8 포토레지스트와 표면 소수처리를 이용한 전기 수력학 노즐 제작)

  • Lim, Byung-Jik;Lee, Kyoung-Il;Kim, Seong-Hyun;Kim, Seon-Min;Lee, Churl-Seung;Lee, Hyun-Joo;Byun, Sang-Un;Cho, Jin-Woo
    • Proceedings of the KIEE Conference
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    • pp.1706-1707
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    • 2011
  • SU-8 감광제를 이용하여 전기 수력학에 응용할 수 있는 내경 $50{\mu}m$인 평면형 노즐 구조와 외경 $100{\mu}m$, 내경 $50{\mu}m$인 돌출형 노즐 구조를 제작하고 노즐 표면에 불소계 수지를 건식 증착하여 소수 처리를 하였으며 이를 통해 전기수력학 방식의 잉크 토출을 구현하였다.

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Experimental and Finite Element Study of Tribological Characteristics of SU-8 Thin Film (실험 및 유한요소해석에 의한 SU-8 박막의 Tribological 특성 연구)

  • Yang, Woo Yul;Shin, Myounggeun;Kim, Hyung Man;Han, Sangchul;Sung, In-Ha
    • Transactions of the Korean Society of Mechanical Engineers A
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    • v.37 no.4
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    • pp.467-473
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    • 2013
  • In this study, two-dimensional finite element models were developed and experiments were conducted using an atomic force microscope to investigate the tribological characteristics of an SU-8 layer coated on a patterned wafer for microsystem applications. The results revealed that both the adhesion and the friction forces measured by the atomic force microscope were lower for the SU-8 coated surface than for the bare silicon surface. This is attributed to the hydrophobicity of SU-8. Another important result derived from the finite element analysis was the critical load required to fracture the SU-8 film with respect to the thickness. The critical loads for thicknesses of 200, 400, and 800 nm were approximately 13, 22, and 28 mN, respectively, which corresponded to a Hertzian contact pressure of 1.2-1.8 GPa. These results will aid in the design of a suitable SU-8 thickness for microsystem components that are in contact with one another.

Fabrication of SiCN Microstructures for Super-Temperature MEMS applications (초고온 MEMS용 SiCN 미세구조물 제조)

  • Woo, Hyung-Soon;Kim, Gue-Hyun;Noh, Sang-Su;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.125-128
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    • 2004
  • In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

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A Study on the High Efficiency PR Strip technology by using the Ozone Process (오존공정을 이용한 고효율 PR 제거기술 연구)

  • Son, Young-Su
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.44 no.1
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    • pp.22-27
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    • 2007
  • we have been studied on the realization of the boundary layer controlled ozone process and related facilities in order to apply for the photo-resist strip process in the semiconductor and flat panel display manufacturing. By means of developing the technology for the high concentration ozone production, it was possible to realized the boundary layer control ozone process by vapor. As a result of the silicon wafer PR strip test, we obtained the strip rate of about 400nm/min at the ozone concentration of 16wt% and flow rate of 8[liter/min.].

Barriers Ribs using Molds Prepared by Inclined UV Lithography

  • Kim, Ki-In;Kim, Yong-Seog
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.788-790
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    • 2003
  • Closed-cell type barrier ribs of PDP were formed by capillary molding process using molds prepared by inclined UV lithography process. Various types of molds with different inclined angles were prepared by patterning SU-8 thick photoresist film and casting with PDMS. The ribs with various type cells were successfully formed by the process. The effects of inclined angle on the distortion of barrier ribs during sintering were investigated. The results indicated that the barrier ribs with a draft angle and dimensional change does not affect the distortion of the barrier ribs during sintering, suggesting that the closed-cell must be isotropic in sintering shrinkage.

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미세입자분사 가공에서 Photoresist를 이용한 마스크의 가공특성에 관한 연구

  • 박동진;이인환;고태조;김희술
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.127-127
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    • 2004
  • 입자분사 가공(abrasive jet machining)은 과거에는 녹(rust) 도색(painting)의 제거 흑은 디버링(deburring), 표면 처리 등의 용도에 국한되어 사용되어졌다. 한편 최근 들어 반도체 제작공정이나 MEMS 공정 등에 적용되는 실리콘(silicon) 등의 세라믹 재료의 미세가공분야가 주목받고 있으며, 따라서 이와 관련된 많은 연구가 진행되고 있다. 한편, 세라믹 재료는 파괴인성이 매우 낮고 취성이 강하기 때문에 크랙발생 후 큰 응력이 연속적으로 주어지면 크랙은 음속으로 진행되어 파단 되는 특성이 있어서 일반적인 기계가공이 매우 어렵다.(중략)

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Fabrication of SiCN structures using PDMS mold for high-temperature applications (PDMS 몰드를 이용한 초고온용 SiCN 구조물의 제작)

  • Woo, Hyung-Soon;Kim, Gue-Hyun;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.376-379
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    • 2003
  • In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

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High-Aspect-Ratio Nanoscale Patterning in a Negative Tone Photoresist

  • Ryoo, Kwangki;Lee, Jeong Bong
    • Journal of information and communication convergence engineering
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    • v.13 no.1
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    • pp.56-61
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    • 2015
  • The demand for high-aspect-ratio structures has been increasing in the field of semiconductors and other applications. Here, we present the commercially available negative-tone SU-8 as a potential resist that can be used for direct patterning of high-aspect-ratio structures at the submicron scale and the nanoscale. Such resist patterns can be used as polymeric molds to create high-aspect-ratio metallic submicron and nanoscale structures by using electroplating. Compared with poly (methyl methacrylate) (PMMA), we found that the negative tone resist required an exposure dose that was less than that of PMMA of equal thickness by a factor of 100-150. Patterning of up to 4:1 aspect ratio SU-8 structures with a minimum feature size of 500 nm was demonstrated. In addition, nanoimprint lithography was studied to further extend the aspect ratio to realize a minimum feature size of less than 10 nm with an extremely high aspect ratio in the negative resist.

Stability Enhancement of IZOthin Film Transistor Using SU-8 Passivation Layer (SU-8 패시베이션을 이용한 솔루션 IZO-TFT의안정성 향상에 대한 연구)

  • Kim, Sang-Jo;Yi, Moonsuk
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.7
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    • pp.33-39
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    • 2015
  • In this work, SU-8 passivated IZO thin-film transistors(TFTs) made by solution-processes was investigated for enhancing stability of indium zinc oxide(IZO) TFT. A very viscous negative photoresist SU-8, which has high mechanical and chemical stability, was deposited by spin coating and patterned on top of TFT by photo lithography. To investigate the enhanced electrical performances by using SU-8 passivation layer, the TFT devices were analyzed by X-ray phtoelectron spectroscopy(XPS) and Fourier transform infrared spectroscopy(FTIR). The TFTs with SU-8 passivation layer show good electrical characterestics, such as ${\mu}_{FE}=6.43cm^2/V{\cdot}s$, $V_{th}=7.1V$, $I_{on/off}=10^6$, SS=0.88V/dec, and especially 3.6V of ${\Delta}V_{th}$ under positive bias stress (PBS) for 3600s. On the other hand, without SU-8 passivation, ${\Delta}V_{th}$ was 7.7V. XPS and FTIR analyses results showed that SU-8 passivation layer prevents the oxygen desorption/adsorption processes significantly, and this feature makes the effectiveness of SU-8 passivation layer for PBS.