• Title/Summary/Keyword: Schottky diode

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Temperature Dependence of Neutron Irradiated SiC Schottky Diode (중성자 조사된 SiC Schottky Diode의 온도 의존 특성)

  • Kim, Sung-Su;Koo, Sang-Mo
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.10
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    • pp.618-622
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    • 2014
  • The temperature dependent characteristics on the properties of SiC Schottky Diode has been investigated. In this study, the temperature dependent current-voltage characteristics of the SiC Schottky diode were measured in the range of 300 ~ 500 K. Divided into pre- and post- irradiated device was measured. The barrier height after irradiation device at 500 K increased 0.15 eV compared to 300 K, the barrier height of pre- neutron irradiated Schottky diode increased 0.07 eV. The effective barrier height after irradiation increased from 0.89 eV to 1.05 eV. And ideality factor of neutron irradiated Schottky diode at 500 K decreased 0.428 compared to 300 K, the ideality factor of pre- neutron irradiated Schottky diode decreased 0.354. Also, a slight positive shift in threshold voltage from 0.53 to 0.68 V. we analyzed the effective barrier height and ideality factor of SiC Schottky diode as function of temperature.

GaAs Schottky Diode with Taper Field Plate (경사진 Field Plate 구조 GaAs 쇼트키 다이오드)

  • King, Sung-Lyong;Yang, Hoie-Yoon;Choi, Yearn-Ik
    • Proceedings of the KIEE Conference
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    • pp.1618-1620
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    • 1997
  • A GaAs schottky diode with taper field plate is proposed to increase breakdown voltage. Breakdown voltage is calculated by device simulator MEDICI. The GaAs schottky diode with taper gate which has $5.7^{\circ}$ taper angle have shown 45% increase in the breakdown voltage compared with conventional field plate GaAs schottky diode.

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A Novel Schottky Diode with the Self-Aligned Guard Ring (자기정렬된 Guard Ring을 갖는 새로운 쇼트키 다이오드)

  • 차승익;조영호;최연익
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.5
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    • pp.573-576
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    • 1992
  • Novel A1-Si Schottky diodes with self-aligned guard rings have been proposed and fabricated using RIE(Reactive Ion Etch). The breakdown voltage of the Schottky diode with the guard ring has been drastically increased to 200V or more in comparison with 46V for the metal overlap Schottky diode.

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A Study of SiC Trench Schottky Diode with Tilt-Implantation for Edge Termination (Edge Termination을 위해 Tilt-Implantation을 이용한 SiC Trench Schottky Diode에 대한 연구)

  • Song, Gil-Yong;Kim, Kwang-Soo
    • Journal of IKEEE
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    • v.18 no.2
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    • pp.214-219
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    • 2014
  • In this paper, the usage of tilt-implanted trench Schottky diode(TITSD) based on silicon carbide is proposed. A tilt-implanted trench termination technique modified for SiC is proposed as a method to keep all the potentials confined in the trench insulator when reverse blocking mode is operated. With the side wall doping concentration of $1{\times}10^{19}cm^{-3}$ nitrogen, the termination area of the TITSD is reduced without any sacrifice in breakdown voltage while potential is confined within insulator. When the trench depth is set to 11um and the width is optimized, a breakdown voltage of 2750V is obtained and termination area is 38.7% smaller than that of other devices which use guard rings for the same breakdown voltage. A Sentaurus device simulator is used to analyze the characteristics of the TITSD. The performance of the TITSD is compared to the conventional trench Schottky diode.

Analysis of effect of parasitic schottky diode on sense amplifier in DDI DRAM (DDI DRAM의 감지 증폭기에서 기생 쇼트키 다이오드 영향 분석)

  • Chang, Sung-Keun;Kim, Youn-Jang
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.2
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    • pp.485-490
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    • 2010
  • We propose the equivalent circuit model including all parasitic components in input gate of sense amplifier of DDI DRAM with butting contact structure. We analysed the effect of parasitic schottky diode by using the proposed model in the operation of sense amplifier. The cause of single side fail and the temperature dependence of fail rate in DDI DRAM are due to creation of the parasitic schottky diode in input gate of sense amplifier. The parasitic schottky diode cause the voltage drop in input gate, and result in decreasing noise margin of sense amplifier. therefore single side fail rate increase.

The Study on the SPICE Model Parameter Extraction Method for the Schottky Diode Under DC Forward Bias (DC 순방향 바이어스 인가조건에서 Schottky 다이오드의 SPICE 모델 파라미터 추출 방법에 관한 연구)

  • Lee, Un-Gu
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.65 no.3
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    • pp.439-444
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    • 2016
  • The method for extracting the SPICE model parameter of Schottky diode under DC forward bias is proposed. A method for improving the accuracy of the SPICE model parameter at various temperatures is proposed. Three analysis steps according to the magnitude of the current is used in order to extract the parameters effectively. At each analysis step, initial parameters are calculated by using the current-voltage equations and the Levenberg-Marquardt analysis is proceeded. To verify the validity of the proposed method, the SPICE model parameters for the BAT45 and FSV1045 under DC forward bias is extracted. Schottky diode currents obtained from the proposed method shows the average relative error of 6.1% and 9% compared with the measured data for the BAT45 and FSV1045 sample at various temperatures.

Titanium Dioxide Sol-gel Schottky Diodes and Effect of Titanium Dioxide Nanoparticle

  • Maniruzzaman, Mohammad;Zhai, Lindong;Mun, Seongcheol;Kim, Jaehwan
    • Journal of Electrical Engineering and Technology
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    • v.10 no.6
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    • pp.2343-2347
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    • 2015
  • This paper reports the effect of Titanium dioxide (TiO2) nanoparticles on a TiO2 sol-gel Schottky diode. TiO2 nanoparticles were blended with TiO2 sol-gel to fabricate the Schottky diode. TiO2 nanoparticles showed strong anatase and rutile X-ray diffraction peaks. However, the mixture of TiO2 sol-gel and TiO2 nanoparticles exhibited no anatase and rutile peaks. The forward current of the Schottky diode drastically increased as the concentration of TiO2 nanoparticles increased up to 10 wt. % and decreased after that. The possible conduction mechanism is more likely space charge limited conduction.

Characteristics of Ni metallization on ICP-CVD SiG thin film and Ni/SiC Schottky diode (ICP-CVD로 성장된 SiC박막의 Ni 금속 접합과 Ni/SiC Schottky diode의 특성 분석)

  • Gil, Tae-Hyun;Kim, Yong-Sang
    • Proceedings of the KIEE Conference
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    • pp.938-940
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    • 1999
  • We have fabricated SiC Schottky diode for high temperature applications. SiC thin film for drift region has been deposited by ICP-CVD. In order to establish metallization conditions, we have extracted the device parameters of the Schottky diode from the forward I-V characteristics and the C-V characteristics as a function of temperature. The ideality factor was varied from 2.07 to 1.15 and the barrier height was also varied from 1.26eV to 1.92eV with increase of temperature. The reverse blocking voltage was 183 V.

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Modification of Schottky Barrier Properties of Ti/p-type InP Schottky Diode by Polyaniline (PANI) Organic Interlayer

  • Reddy, P.R. Sekhar;Janardhanam, V.;Jyothi, I.;Yuk, Shim-Hoon;Reddy, V. Rajagopal;Jeong, Jae-Chan;Lee, Sung-Nam;Choi, Chel-Jong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.5
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    • pp.664-674
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    • 2016
  • The electrical properties of Ti/p-type InP Schottky diodes with and without polyaniline (PANI) interlayer was investigated using current-voltage (I-V) and capacitance-voltage (C-V) measurements. The barrier height of Ti/p-type InP Schottky diode with PANI interlayer was higher than that of the conventional Ti/p-type InP Schottky diode, implying that the organic interlayer influenced the space-charge region of the Ti/p-type InP Schottky junction. At higher voltages, the current transport was dominated by the trap free space-charge-limited current and trap-filled space-charge-limited current in Ti/p-type InP Schottky diode without and with PANI interlayer, respectively. The domination of trap filled space-charge-limited current in Ti/p-type InP Schottky diode with PANI interlayer could be associated with the traps originated from structural defects prevailing in organic PANI interlayer.