• Title, Summary, Keyword: Semi-insulating

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Electrical Characteristics of SiC Lateral P-i-N Diodes Fabricated on SiC Semi-Insulating Substrate

  • Kim, Hyoung Woo;Seok, Ogyun;Moon, Jeong Hyun;Bahng, Wook;Jo, Jungyol
    • Journal of Electrical Engineering and Technology
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    • v.13 no.1
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    • pp.387-392
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    • 2018
  • Static characteristics of SiC (silicon carbide) lateral p-i-n diodes implemented on semi-insulating substrate without an epitaxial layer are inVestigated. On-axis SiC HPSI (high purity semi-insulating) and VDSI (Vanadium doped semi-insulating) substrates are used to fabricate the lateral p-i-n diode. The space between anode and cathode ($L_{AC}$) is Varied from 5 to $20{\mu}m$ to inVestigate the effect of intrinsic-region length on static characteristics. Maximum breakdown Voltages of HPSI and VDSI are 1117 and 841 V at $L_{AC}=20{\mu}m$, respectiVely. Due to the doped Vanadium ions in VDSI substrate, diffusion length of carriers in the VDSI substrate is less than that of the HPSI substrate. A forward Voltage drop of the diode implemented on VDSI substrate is 12 V at the forward current of $1{\mu}A$, which is higher than 2.5 V of the diode implemented on HPSI substrate.

Band-gap energy (Eo) measurements of semi-insulating GaAs by photoreflectance (Photoreflectance에 의한 반절연성 GaAs의 띠간격 에너지(Eo)측정)

  • 배인호;김말문;이정열;김인수;김기홍
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.490-495
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    • 1994
  • We investigated photoreflectance of semi-insulating GaAs with respect to modulation sources, that is, modulation beam intensity, modulation frequency, temperature, and thickness of sample. PR spectra by each modulation source turned out to be signals of low electric field third differential, and band gap values of sample were fitted by least square root method for Aspnes' theoretical equation.

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Electrical Properties of ZnTe-lnSb Heterojunctions (ZnTe-InSb Heterojunction의 전기적 특성)

  • 김화택
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.12 no.4
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    • pp.35-40
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    • 1975
  • The Zn7e-lnSb heterojunctions was prepared by interface alloying technique. The structure of this beterojunction had p-i-n which semi-insulating ZnTe laver at interface of this heterojunction was formed by diffusing In of InSb into ZnTe crystal. The current transport mechanism of this heterojunction was Spacecharge-Limited-Current(SCLC) mechanism by hole at semi-insulating ZnTe layer. The hole wart injected from valence band of p- type SnTe crystal. Orange color electroluminescence was observed at this heterojunction when forward and reversed bias voltage applied.

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Improvement of Interfacial Performances on Insulating and Semi-conducting Silicone Polymer Joint by Plasma-treatment

  • Lee, Ki-Taek;Huh, Chang-Su
    • Transactions on Electrical and Electronic Materials
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    • v.7 no.1
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    • pp.16-20
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    • 2006
  • In this paper, we investigated the effects of short-term oxygen plasma treatment of semiconducting silicone layer to improve interfacial performances in joints prepared with a insulating silicone materials. Surface characterizations were assessed using contact angle measurement and x-ray photoelectron spectroscopy (XPS), and then adhesion level and electrical performance were evaluated through T-peel tests and electrical breakdown voltage tests of treated semi-conductive and insulating joints. Plasma exposure mainly increased the polar component of surface energy from $0.21\;dyne/cm^2$ to $47\;dyne/cm^2$ with increasing plasma treatment time and then leveled off. Based on XPS analysis, the surface modification can be mainly ascribed to the creation of chemically active functional groups such as C-O, C=O and COH on semi-conductive silicone surface. This oxidized rubber layer is inorganic silica-like structure of Si bound with three to four oxygen atoms ($SiO_x,\;x=3{\sim}4$). The oxygen plasma treatment produces an increase in joint strength that is maximum for 10 min treatment. However, due to brittle property of this oxidized layer, the highly oxidized layer from too much extended treatment could be act as a weak point, decreasing the adhesion strength. In addition, electrical breakdown level of joints with adequate plasma treatment was increased by about $10\;\%$ with model samples of joints prepared with a semi-conducting/ insulating silicone polymer after applied to interface.

Dark Conductivity in Semi-Insulating Crystals of CdTe:Sn

  • Makhniy, V.P.;Sklyarchuk, V.M.;Vorobiev, Yu.V.;Horley, P.P.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.15 no.2
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    • pp.243-248
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    • 2015
  • We prepared semi-insulating CdTe for radiation detectors by isothermal annealing of single crystals grown by Bridgeman technique in a sealed quartz container filled with Sn vapor. The resistivity of CdTe:Sn samples thus obtained was of order of $10^{10}Ohm{\cdot}cm$ at room temperature with electrons lifetime of $2{\times}10^{-8}$ s, which is appropriate for the applications desired. Analysis of electric transport characteristics depending on temperature, sample thickness and voltage applied revealed the presence of traps with concentration of about $(4-5){\times}10^{12}cm^{-3}$ with the corresponding energy level at 0.8 - 0.9 eV counted from the bottom of conduction band. The conductivity was determined by electron injection from electrodes in space charge limited current mode.

Surface Photovoltage in Electron Beam Irradiation Semi-insulating GaAs

  • Yu, Jae-In;Lim, Jin-Hwan;Yu, Jae-Yong;Kim, Ki-Hong
    • Journal of Electrical Engineering and Technology
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    • v.1 no.4
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    • pp.543-545
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    • 2006
  • Surface photovoltage (SPV) measurements were performed to investigate the optic-electrical properties in the electron beam irradiation semi-insulating GaAs (e-beam irradiation SI-GaAs) and semi-insulating GaAs (SI-GaAs). The signal intensity showed stronge. dependency on the frequency in the SI-GaAs than it did in the e-beam irradiation SI-GaAs. This result indicates that the number of the generated photo-carriers depends on the surface state. Also, the B region of the e-beam irradiation SI-GaAs found a weak signal. This result was explained by the surface and internal damage with e-beam irradiation.

A Semi-MMIC Hair-pin Resonator Oscillator for K-Band Application (K-Band용 SEmi-MMIC Hair-pin 공진발진기)

  • 이현태
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.25 no.9B
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    • pp.1635-1640
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    • 2000
  • In this paper, a 18 GHz oscillator is designed with the push-push method an fabricated by semi-MMIC process, in which the second harmonic is the main output signal with the suppressed fundamental mode. In semi-MMIC process, passive components with microstrip transmission line are implemented using MMIC process on semi-insulating GaAs substrate. Then, chip types of P-HEMT, resistors, and capacitors are connected through Au wire-bonding. Also, the ground plane is inserted around the circuit and connected each other with the back-side of substrate through Au wire-bonding instead of via-hole. The semi-MMIC push-push oscillator shows the output powder of -10.5 dBm, the fundamental frequency suppression of -17.3 dBc/Hz, and the phase noise of -97.9 dBc/Hz at the offset frequency of 100 kHz.

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Deep Levels in Semi-Insulating GaAs : Cr and Undoped GaAs (SI GaAs : Cr과 Undoped GaAs의 깊은 준위)

  • Rhee, Jin-Koo
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.11
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    • pp.1294-1303
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    • 1988
  • Electron and hole traps in semi-insulating GaAs with activation energies ({\Delta}E_r) ranging from 0.16 $\pm$ 0.01 to 0.98 $\pm$ 0.01 eV, have been detected and characterized by photo-induced current transient measurements. SI undoped GaAs has fewer deep levels than SI GaAs: Cr. The thermal capture cross section and density of the traps have been estimated and some of the centers have been related to native defects. In particular, the activation energy of the compensating Cr, and "0" levels in semi-insulating GaAs were accurately measured. The transient measurements were complemented by Hall measurements at T > 300K and photocurrent spectra measurements. The transition energies for the deep compensating levels obtained by the analyses of data from these measurements, when compared with those from the transient measurements, indicate negligible lattice-coupling of these centers. Analysis of the transport data also indicates that neutral impurity scattering plays a significant role in semi-insulating materials at high temperatures.

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Development of Semi-Incombustible Composite Insulating Board Containing Pine Leaf Powder and Vermiculite (송엽분과 질석을 포함한 준불연 단열복합보드의 개발)

  • Cheong, Chang Heon;Yoo, Seok Hyung
    • Fire Science and Engineering
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    • v.32 no.3
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    • pp.27-34
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    • 2018
  • A Semi-Incombustible Composite Insulation Board (SICIB) that can be applied to building construction and ships was developed. The SICIBs comprised of pine leaf powder, vermiculite. The incombustibility, semi-incombustibility, and U-factor of the developed SICIBs were measured. The incombustibility of the each SICIB was determined by the proportion of combustible flexible binder and pine leaf powder. SICIB satisfied the incombustibility test without a combustible flexible binder and pine leaf powder. In addition, SICIB with 6% of pine leaf ensured its semi-incombustible performance. A combustible flexible binder or pine leaf powder over 6% failed the fire-resistant performance of SICIB. In addition, SICIBs with incombustible/semi-incombustible finishing and a 200 mm insulating layer (glass wool and sprayed poly urethane foam) met the U-factor of an external wall for buildings described in the Korean building code.

A Study on Deep Levels in Rapid Thermal Annealed PICTS Semi-Insulating InP(100) by PICTS (PICTS 방법에 의한 급속열처리시킨 반절연성 InP(100)에서 깊은준위에 관한 연구)

  • 김종수;김인수;이철욱;이정열;배인호
    • Electrical & Electronic Materials
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    • v.10 no.8
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    • pp.800-806
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    • 1997
  • The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

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