• Title, Summary, Keyword: Semiconductor

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Synthesis of High Purity Multiwalled and Singlewalled Carbon Nanotubes by Arc-discharge

  • Kim, Keun-Soo;Park, Young-Soo;An, Kay-Hyeok;Jeong, Hee-Jin;Kim, Won-Seok;Choi, Young-Chul;Lee, Seung-Mi;Moon, Jeong-Mi;Chung, Dong-Chul;Bae, Dong-Jae;Lim, Seong-Chu;Lee, Young-Seak;Lee, Young-Hee
    • Carbon letters
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    • v.1 no.2
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    • pp.53-59
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    • 2000
  • The synthetic methods for high yield of multiwalled carbon nanotube (MWNT) and singlewalled carbon nanotube (SWNT) with high purity by arc discharge have been investigated. MWNTs were synthesized under different pressures of helium and the gas mixture of argon and hydrogen. Relatively high pressure of 300-400 torr was required for high yield MWNTs synthesis at low bias voltage of about 20 V and 55 A, whereas low pressure of about 100 torr was required for SWNTs. The introduction of hydrogen gases during the synthesis of MWNTs improved the yield and purity of the samples. The SWNTs were synthesized by the assistance of a small amount of mixture of transition metals, which played as a catalyst during the formation process. The purity and yield of SWNTs were higher at a lower pressure and enhanced by mixing more components of the transition metals.

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Integration Process and Reliability for $SrBi_2$ $Ta_2O_9$-based Ferroelectric Memories

  • Yang, B.;Lee, S.S.;Kang, Y.M.;Noh, K.H.;Hong, S.K.;Oh, S.H.;Kang, E.Y.;Lee, S.W.;Kim, J.G.;Shu, C.W.;Seong, J.W.;Lee, C.G.;Kang, N.S.;Park, Y.J.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.3
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    • pp.141-157
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    • 2001
  • Highly reliable packaged 64kbit ferroelectric memories with $0.8{\;}\mu\textrm{m}$ CMOS ensuring ten-year retention and imprint at 125^{\circ}C$ have been successfully developed. These superior reliabilities have resulted from steady integration schemes free from the degradation, due to layer stress and attacks of process impurities. The resent results of research and development for ferroelectric memories at Hynix Semiconductor Inc. are summarized in this invited paper.

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Data Retention Time and Electrical Characteristics of Cell Transistor According to STI Materials in 90 nm DRAM

  • Shin, S.H.;Lee, S.H.;Kim, Y.S.;Heo, J.H.;Bae, D.I.;Hong, S.H.;Park, S.H.;Lee, J.W.;Lee, J.G.;Oh, J.H.;Kim, M.S.;Cho, C.H.;Chung, T.Y.;Kim, Ki-Nam
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.3 no.2
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    • pp.69-75
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    • 2003
  • Cell transistor and data retention time characteristics were studied in 90 nm design rule 512M-bit DRAM, for the first time. And, the characteristics of cell transistor are investigated for different STI gap-fill materials. HDP oxide with high compressive stress increases the threshold voltage of cell transistor, whereas the P-SOG oxide with small stress decreases the threshold voltage of cell transistor. Stress between silicon and gap-fill oxide material is found to be the major cause of the shift of the cell transistor threshold voltage. If high stress material is used for STI gap fill, channel-doping concentration can be reduced, so that cell junction leakage current is decreased and data retention time is increased.

Blazed $GxL^{TM}$ Device for Laser Dream Theater at the Aichi Expo 2005

  • Ito, Yasuyuki;Saruta, Kunihiko;Kasai, Hiroto;Nishida, Masato;Yamaguchi, Masanari;Yamashita, Keitaro;Taguchi, Ayumu;Oniki, Kazunao;Tamada, Hitoshi
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.556-559
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    • 2006
  • We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

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The Implementation of Communication Protocol for Semiconductor Equipments using Directed Diffusion (직접 확산 방식을 이용한 반도체 장비 통신 프로토콜 구현)

  • Kim, Doo Yong;Cho, Hyun Chan
    • Journal of the Semiconductor & Display Technology
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    • v.12 no.2
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    • pp.39-43
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    • 2013
  • The semiconductor equipments generate necessary data through communication networks for the effective manufacturing processes and automation of semiconductor equipments. For transferring data between semiconductor equipments and sending data to monitor equipments, several standards for communication protocols have been proposed. Communication networks in semiconductor manufacturing systems will transmit a lot of data traffic, which can be vulnerable in data delay and network failure. Therefore, it is required that data traffic need to be distributed. To accomplish this objective, we recommend the use of a redundant and valuable communication path which is constructed by a wireless sensor network. In this paper, the directed diffusion method for wireless sensor networking is suggested for networking semiconductor equipments. It is shown that how the directed diffusion is employed to connect semiconductor equipments. Also, we show how to implement the SECS of semiconductor equipments communication protocols based on the directed diffusion.