• Title, Summary, Keyword: SiC

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The Synthesis of $Ti_3$$SiC_2$by Si Melt Infiltration (용융 Si 침윤에 의한 $Ti_3$$SiC_2$의 합성)

  • 이승석;박상환;임병선;권혁보;정윤중
    • Journal of the Korean Ceramic Society
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    • v.37 no.11
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    • pp.1114-1118
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    • 2000
  • Ti 및 C 입자로 이루어진 다공질 성형체에 용융 Si의 침윤 및 반응으로 새로운 Ti$_3$SiC$_2$합성공정이 개발되었다. 용융 Si 침윤에 의한 Ti$_3$SiC$_2$합성공정에서는 이제까지 연구된 합성방법 보다 넓은 조성 범위에서 Ti$_3$SiC$_2$의 합성이 이루어졌다. 용융 Si을 활성 매질로 사용한 Ti$_3$SiC$_2$의 합성에서는 성형체 조성, 원료 입자 크기 및 침윤되는 용융 Si의 양에 따라 합성되는 상 및 각 합성상의 양이 다르게 나타났다. Ti:Si:C=3:1:6 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$상이 합성되었으며, 일부 조성을 제외한 모든 조성의 시편에서 Ti$_3$SiC$_2$, TiC 및 SiC가 함께 합성되었다. 작은 Ti 입자로 이루어진 성형체를 사용하여 합성한 시편에서 Ti$_3$SiC$_2$상의 합성이 용이하게 이루어졌으며, 성형체 조성 및 침윤되는 Si의 양이 화학양론적으로 Ti$_3$SiC$_2$에 근접한 조성을 갖는 시편에서 Ti$_3$SiC$_2$를 높은 수율로 합성할 수 있었다.

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Fabrication and Properties of $SiC/Si_3N_4$ Hybrid Composite Materials ($SiC/Si_3N_4$ 하이브리드 복합체이 제조 및 특성)

  • Gang, Jong-Bong;Jo, Beom-Rae;Lee, Su-Yeong
    • Korean Journal of Materials Research
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    • v.6 no.4
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    • pp.428-435
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    • 1996
  • 초미립 SiC분말과 SiC platelet을 2차성으로 Si3N4에 첨가하여 SiC/Si3N4 하이브리드 복합체를 가압소결로 제조한 후 2차상의 영향을 조사한 결과핫프레스법을 이용한 경우 SiC platelet은 Si3N4 기지 복합채의 치밀화를 저해하지 않고 초미립의 SiC 첨가는 Si3N4의 입성장을 효과적으로 억제하여 미세한 $\beta$-Si3N4의 grain을 형성함을 관찰하였다. 초미립 SiC첨가를 통한 복합체의 강도 증진은 상대적으로 $\beta$-Si3N4입자의 미세화에 의한 인성의 저하를 유도하나 SiC platelet을 첨가하여 급격한 강도 저하 없이 높은 인성을 갖는 하이브리드 복합체를 제조할 수 있었으며 SiC/Si3N4 하이브리드 복합체의 인성증진은 elongated $\beta$-Si3N4와 platelet SiC의 debonding에 의한 grain pull-out 영향임을 알 수 있었다.

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Formation of Ti3SiC2 Interphase of SiC Fiber by Electrophoretic Deposition Method

  • Lee, Hyeon-Geun;Kim, Daejong;Jeong, Yeon Su;Park, Ji Yeon;Kim, Weon-Ju
    • Journal of the Korean Ceramic Society
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    • v.53 no.1
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    • pp.87-92
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    • 2016
  • Due to its stability at high temperature and its layered structure, $Ti_3SiC_2$ MAX phase was considered to the interphase of $SiC_f/SiC$ composite. In this study, $Ti_3SiC_2$ MAX phase powder was deposited on SiC fiber via the electrophoretic deposition (EPD) method. The Zeta potential of the $Ti_3SiC_2$ suspension with and without polyethyleneimine as a dispersant was measured to determine the conditions of the EPD experiments. Using a suspension with 0.03 wt.% ball milled $Ti_3SiC_2$ powder and 0.3 wt.% PEI, $Ti_3SiC_2$ MAX phase was successfully coated on SiC fiber with an EPD voltage of 10 V for 2 h. Most of the coated $Ti_3SiC_2$ powders are composed of spherical particles. Part of the $Ti_3SiC_2$ powders that are platelet shaped are oriented parallel to the SiC fiber surface. From these results we expect that $Ti_3SiC_2$ can be applied to the interphase of $SiC_f/SiC$ composites.

The effects of brazing conditions on the bond strength of the SiC/SiC and SiC/mild steel joints brazed by Ag-Ti based alloys (Ag-Ti계 합금을 사용한 SiC/SiC 및 SiC/연강 브레이징에서 브레이징 조건이 접합강도에 미치는 영향의 연구)

  • 이형근;이재영
    • Journal of Welding and Joining
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    • v.15 no.5
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    • pp.104-114
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    • 1997
  • The microstructure and bond strength were investigated on the SiC/SiC and SiC/mild steel joints brazed by Ag-5at%Ti alloy. Ag-5at%Ti-2at%Fe and -5at%Fe brazing alloys were also used to see the effects of Fe addition on the bond strength of SiC/SiC brazed joints. Brazing temperature and brazing gap were selected and examined as brazing variables. The microstructure of SiC/SiC brazed joints was affected by Fe addition to the Ag-5at%Ti alloy, but the bond strength was not. Increasing brazing temperature also changed the microstructure of $Ti_5Si_3$ reaction layer and brazing alloy matrix of the SiC/SiC and SiC/mild steel joints, but not the bond strength. Brazing gap had a great effects on the bond strength. Decreasing brazing gap from 0.2 mm to 0.1 mm in SiC/SiC brazing increased the bond strength from 187 MPa to 263 MPa and, in SiC/mild steel brazing, from 189 MPa to 212 MPa. It was concluded that the most important parameter on the bond strength in SiC/SiC and SiC/mild steel brazing was the relative ratio between brazing gap and specimen size.

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Sintering Characteristics of Si/SiC Mixtures from Si Waste of Solar Cell Industry (태양광(太陽光) 산업(産業)에서 발생(發生)하는 Si/SiC 혼합물(混合物)의 소결특성(燒結特性) 연구(硏究))

  • Kwon, Woo Teck;Kim, Soo Ryong;Kim, Younghee;Lee, Yoon Joo;Kim, Jong Il;Lee, Hyun Jae;Oh, Sea Cheon
    • Journal of the Korean Institute of Resources Recycling
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    • v.22 no.3
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    • pp.28-35
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    • 2013
  • The recycling of the Si/SiC mixture sludge obtained from solar cell industry is very significant, environmentally and economically. The sintering characteristics of Si/SiC mixture sludge was studied for the purpose of recycling. In this study, to understand sintering behavior, SiC content in the Si/SiC mixture was controlled using an air separator. Various Si/SiC mixtures having different SiC contents were sintered using carbon black, clay and aluminum hydroxide as sintering aids. Physical properties of Si/SiC mixture and sintered bodies have been characterized using SEM, XRD, particle size analyzer and apparent density measurement. SEM and particle size analysis result confirmed that the fine particles less than 1 ${\mu}m$ decreased or removed more effectively through the air separator in the case of 95% SiC sample compared than the case of 75% SiC sample or original SiC sample. Further, with addition of the Aluminum Hydroxide, ${\beta}$-cristobalite phase gradually decreased while mullite phase gradually increased. The addition of the carbon black improved the sintering characteristics.

SiC(3C)/Si Photodetector (SiC(3C)/Si 수광소자)

  • 박국상;남기석;김정윤
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.2
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    • pp.212-216
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    • 1999
  • SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

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Fabrication of Cu-30 vol% SiC Composites by Pressureless Sintering of Polycarbosilane Coated SiC and Cu Powder Mixtures (Polycarbosilane이 코팅된 SiC와 Cu 혼합분말의 상압소결에 의한 Cu-30 vol% SiC 복합재료의 제조)

  • Kim, Yeon Su;Kwon, Na-Yeon;Jeong, Young-Keun;Oh, Sung-Tag
    • Korean Journal of Materials Research
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    • v.26 no.6
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    • pp.337-341
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    • 2016
  • Cu-30 vol% SiC composites with relatively densified microstructure and a sound interface between the Cu and SiC phases were obtained by pressureless sintering of PCS-coated SiC and Cu powders. The coated SiC powders were prepared by thermal curing and pyrolysis of PCS. Thermal curing at $200^{\circ}C$ was performed to fabricate infusible materials prior to pyrolysis. The cured powders were heated treated up to $1600^{\circ}C$ for the pyrolysis process and for the formation of SiC crystals on the surface of the SiC powders. XRD analysis revealed that the main peaks corresponded to the ${\alpha}$-SiC phase; peaks for ${\beta}$-SiC were newly appeared. The formation of ${\beta}$-SiC is explained by the transformation of thermally-cured PCS on the surface of the initial ${\alpha}$-SiC powders. Using powder mixtures of coated SiC powder, hydrogen-reduced Cu-nitrate, and elemental Cu powders, Cu-SiC composites were fabricated by pressureless sintering at $1000^{\circ}C$. Microstructural observation for the sintered composites showed that the powder mixture of PCS-coated SiC and Cu exhibited a relatively dense and homogeneous microstructure. Conversely, large pores and separated interfaces between Cu and SiC were observed in the sintered composite using uncoated SiC powders. These results suggest that Cu-SiC composites with sound microstructure can be prepared using a PCS coated SiC powder mixture.

Fabrication of polycrystalline 3C-SiC thin film diodes (다결정 3C-SiC 박막 다이오드의 제작)

  • Ahn, Jeong-Hak;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.348-349
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    • 2007
  • This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, Hz, and Ar gas at $1180^{\circ}C$ for 3 hr. The schottky diode with Au/poly 3C-SiC/Si(n-type) structure was fabricated. Its threshold voltage ($V_d$), breakdown voltage, thickness of depletion layer, and doping concentration ($N_D$) values were measured as 0.84 V, over 140 V, 61nm, and $2.7\;{\times}\;10^{19}\;cm^3$, respectively. The p-n junction diodes fabricated on the poly 3C-SiC/Si(p-type) were obtained like characteristics of single 3C-SiC p-n junction diodes. Therefore, poly 3C-SiC thin film diodes will be suitable microsensors in conjunction with Si fabrication technology.

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Raman Characteristics of Polycrystalline 3C-SiC Thin Films (다결정 3C-SiC 박막의 라만 특성)

  • Jeong, Jun-Ho;Chung, Gwiy-Sang
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.357-358
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    • 2007
  • Raman spectra of poly (polycrystalline) 3C-SiC thin films, which were deposited on the oxidized Si substrate by APCVD, have been measured. They were used to study the mechanical characteristics of poly 3C-SiC grown in various temperatures. TO and LO modes of 2.0 m poly 3C-SiC grown at 1180 C occurred at 794.4 and $965.7\;cm^{-1}$. Their FWHMs (full width half maximum) were used to investigate the stress and the disorder of 3C-SiC. The broad FWHM can explain that the crystallinity of 3C-SiC grown at 1180 C becomes poly crystalline instead of the disordered crystal. The ratio of intensity $I_{(LO)}/I_{(TO)}$ 1.0 means that the crystal defect of 3C-SiC/$SiO_2$/Si is small. The biaxial stress of poly 3C-SiC was obtained as 428 MPa. In the interface of 3C-SiC/$SiO_2$, the phonon mode of C-O bonding appeared at $1122.6\;cm^{-1}$. The phonon modes related to D and G bands of C-C bonding were measured at 1355.8 and $1596.8\;cm^{-1}$ respectively.

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Effects of Fiber Arrangement Direction on Microstructure Characteristics of NITE-SiC Composites (NITE-SiC 복합재료의 미세구조 특성에 미치는 섬유배열방향 영향)

  • Lee, Young-Ju;Yoon, Han-Ki;Park, Joon-Soo;Kohyama, A.
    • Proceedings of the Korea Committee for Ocean Resources and Engineering Conference
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    • pp.158-161
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    • 2006
  • SiC materials have been extensively studied for high temperature components in advanced energy conversion system and advanced gas turbine. However, the brittle characteristics of SiC such as law fracture toughness and law strain-to fracture impose a severe limitation on the practical applications of SiC materials. SiC/SiC composites can be considered as a promising candidate in various structural materials, because of their good fracture toughness. In this composite system, the direction of SiC fiber will give an effect to the mechanical properties. It is therefore important to control a properdirection of SiC fiber for the fabrication of high performance SiC/SiC composites. In this study, unidirection and two dimension woven structures of SiC/SiC composites were prepared starting from Tyranno SA fiber. SiC matrix was obtained by nano-powder infiltration and transient eutectoid (NITE) process. Effect of microstructure and density on the sintering temperature in NITE-SiC/SiC composites are described and discussed with the fiber direction of unidirection and two dimension woven structures.

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