• Title, Summary, Keyword: Sidewall Angle

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A Study on Variation of the Sidewall Angle of a Thick Photoresist on the Wavelength and the Proximity gap (노광파장과 근접거리에 따른 두꺼운 감광막의 측면기울기 변화에 관한 연구)

  • 한창호;김학;김현철;전국진
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.1
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    • pp.27-30
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    • 2004
  • In this work, the variation of the sidewall profile of a thick photoresist on the wavelength and proximity gap was investigated. PMER P-LA900PM, DNQ (DiazoNaphthoQuinone) novolac type photoresist, is used for experiments. The calculated results agreed well with the experimental results.

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Chemical Mechanical Polishing Characteristics of BTO Thin Film for Vertical Sidewall Patterning of High-Density Memory Capacitor (고집적 메모리 커패시터의 Vertical Sidewall Patterning을 위한 BTO 박막의 CMP 특성)

  • Ko, Pil-Ju;Park, Sung-Woo;Lee, Kang-Yeon;Lee, Woo-Sun;Seo, Yong-Jin
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.55 no.3
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    • pp.116-121
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    • 2006
  • Most high-k materials are well known not to be etched easily, Some problems such as low etch rate poor sidewall angle, plasma damage, and process complexity were emerged from the high-density DRAM fabrication. Chemical mechanical polishing (CMP) by a damascene process was proposed to pattern this high-k material was polished with some commercial silica slurry as a function of pH variation. Sufficient removal rate with adequate selectivity to realize the pattern mask of tera-ethyl ortho-silicate (TEOS) film for the vertical sidewall angle were obtained. The changes of X-ray diffraction pattern and dielectric constant by CMP process were negligible. The planarization was also achieved for the subsequent multi-level processes. Our new CMP approach will provide a guideline for effective patterning of high-k material by CMP technique.

Electrical Characteristics of Enhancement-Mode n-Channel Vertical GaN MOSFETs and the Effects of Sidewall Slope

  • Kim, Sung Yoon;Seo, Jae Hwa;Yoon, Young Jun;Kim, Jin Su;Cho, Seongjae;Lee, Jung-Hee;Kang, In Man
    • Journal of Electrical Engineering and Technology
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    • v.10 no.3
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    • pp.1131-1137
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    • 2015
  • Gallium nitride (GaN) is a promising material for next-generation high-power applications due to its wide bandgap, high breakdown field, high electron mobility, and good thermal conductivity. From a structure point of view, the vertical device is more suitable to high-power applications than planar devices because of its area effectiveness. However, it is challenging to obtain a completely upright vertical structure due to inevitable sidewall slope in anisotropic etching of GaN. In this letter, we design and analyze the enhancement-mode n-channel vertical GaN MOSFET with variation of sidewall gate angle by two-dimensional (2D) technology computer-aided design (TCAD) simulations. As the sidewall slope gets closer to right angle, the device performances are improved since a gradual slope provides a leakage current path through the bulk region.

CONTACT PRESSURE DISTRIBUTION OF RADIAL TIRE IN MOTION WITH CAMBER ANGLE

  • Kim, Seok-Nam;Kondo, Kyohei;Akasaka, Takashi
    • Proceedings of the KSME Conference
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    • pp.387-394
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    • 2000
  • Theoretical and experimental study is conducted on the contact pressure distribution of a radial tire in motion under various camber angles. Tire construction is modelled by a spring bedded elastic ring, consisted of sidewall springs and a composite belt ring. The contact area is assumed to be a trapezoidal shape varying with camber angles and weighted load. The basic equation in a quasi-static form is derived for the deformation of a running belt with a constant velocity by the aid of Lagrange-Euler transformation. Galerkin's method and stepwise calculation are applied for solving the basic equation and the mechanical boundary condition along both sides of the contact belt part subjected to shearing forces transmitted from the sidewall spring. Experimental results on the contact pressure, measured by pressure sensors embedded in the surface of the drum tester, correspond well with the calculated ones for the test tire under various camber angles, running velocities and weighted loads. These results indicate that a buckling phenomenon of the contact belt in the widthwise direction occurs due to the effect of camber angle.

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Improved Margin of Absorber Pattern Sidewall Angle Using Phase Shifting Extreme Ultraviolet Mask (위상변위 극자외선 마스크의 흡수체 패턴의 기울기에 대한 오차허용도 향상)

  • Jang, Yong Ju;Kim, Jung Sik;Hong, Seongchul;Ahn, Jinho
    • Journal of the Semiconductor & Display Technology
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    • v.15 no.2
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    • pp.32-37
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    • 2016
  • Sidewall angle (SWA) of an absorber stack in extreme ultraviolet lithography mask is considered to be $90^{\circ}$ ideally, however, it is difficult to obtain $90^{\circ}$ SWA because absorber profile is changed by complicated etching process. As the imaging performance of the mask can be varied with this SWA of the absorber stack, more complicated optical proximity correction is required to compensate for the variation of imaging performance. In this study, phase shift mask (PSM) is suggested to reduce the variation of imaging performance due to SWA change by modifying mask material and structure. Variations of imaging performance and lithography process margin depending on SWA were evaluated through aerial image and developed resist simulations to confirm the advantages of PSM over the binary intensity mask (BIM). The results show that the variations of normalized image log slope and critical dimension bias depending on SWA are reduced with PSM compared to BIM. Process margin for exposure dose and focus was also improved with PSM.

A COMPUTATIONAL ANALYSIS FOR OUTLET SHAPE DESIGN TO SUPPRESS FLOW RECIRCULATION IN A ROTATING-DISK CVD REACTOR (회전원판형 CVD 장치의 유동 재순환을 억제하는 출구부 형상 설계를 위한 전산해석)

  • Park, J.J.;Kim, K.;Kwak, H.S.
    • Journal of computational fluids engineering
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    • v.18 no.4
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    • pp.74-81
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    • 2013
  • A numerical design analysis is conducted to search for an optimal shape of outlet in a rotating-disk CVD reactor. The goal is to suppress flow recirculation that has been found in a reactor having a sudden expansion of flow passage outside of the rotating disk. In order to streamline gas flow, the sidewall at which the flow in the Ekman layer is impinged, is tilted. The axisymmetric laminar flow and heat transfer in the reactor are simulated using the incompressible ideal gas model. For the conventional vertical sidewall, the flow recirculation forming in the corner region could be expanded into the interior to distort the upstream flow. The numerical results show that this unfavorable phenomenon inducing back flow could be dramatically suppressed by tilting the sidewall at a certain range of angle. The assessment of deviation in deposition rate based on the characteristic isotherm illustrates that the sidewall tilting may expand the domain of stable plug-like flow regime toward higher pressure. A physical interpretation is attempted to explain the mechanism to suppress flow recirculation.

Lateral nasal advancement flap for reconstruction of the nasal sidewall and dorsum

  • Ogawa, Yutaka;Ogawa, Yasuko
    • Archives of Plastic Surgery
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    • v.47 no.1
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    • pp.102-105
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    • 2020
  • Malignant skin tumors and precancerous lesions have a predilection to be located in the nasal dorsum or sidewall. Although invasive reconstructions have been presented, no simple and suitable method has yet been reported for this area. The flap presented herein, named the lateral nasal advancement flap, is designed on the adjacent lateral region of the sidewall or nasal dorsum and advanced in the medial direction. Two Burow's triangles are removed in the upper and lower portions of the flap: the upper triangle along the nasofacial sulcus and the lower triangle along the nasofacial sulcus and/or the alar groove. Excellent results were obtained in the two clinical cases described in this report. Neither a trap door deformity nor dog-ears developed in either case. The postsurgical scars followed the aesthetic lines and became inconspicuous. A distinct angle was formed in the nasofacial sulcus without anchor sutures. This surgical procedure is technically simple and is performed under local anesthesia. Although the flap is a cheek-based advancement flap, postsurgical scars do not remain in the cheek; instead, they are located in the nasofacial sulcus and alar groove. The lateral nasal advancement flap is recommended for reconstruction of the nasal sidewall and dorsum.

A stress model reflecting the effect of the friction angle on rockbursts in coal mines

  • Fan, Jinyang;Chen, Jie;Jiang, Deyi;Wu, Jianxun;Shu, Cai;Liu, Wei
    • Geomechanics and Engineering
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    • v.18 no.1
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    • pp.21-27
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    • 2019
  • Rockburst disasters pose serious threat to mining safety and underground excavation, especially in China, resulting in massive life-wealth loss and even compulsive closed-down of some coal mines. To investigate the mechanism of rockbursts that occur under a state of static forces, a stress model with sidewall as prototype was developed and verified by a group of laboratory experiments and numerical simulations. In this model, roadway sidewall was simplified as a square plate with axial compression and end (horizontal) restraints. The stress field was solved via the Airy stress function. To track the "closeness degree" of the stress state approaching the yield limit, an unbalanced force F was defined based on the Mohr-Coulomb yield criterion. The distribution of the unbalanced force in the plane model indicated that only the friction angle above a critical value could cause the first failure on the coal in the deeper of the sidewall, inducing the occurrence of rockbursts. The laboratory tests reproduced the rockburst process, which was similar to the prediction from the theoretical model, numerical simulation and some disaster scenes.

Wet-etch Characteristics of ZnO Using Acidic Solutions (산성용액을 이용한 아연산화물 반도체의 습식 식각 특성)

  • Oh, Jung-Hoon;Lee, Ji-Myon
    • Korean Journal of Materials Research
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    • v.16 no.1
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    • pp.63-67
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    • 2006
  • The characteristics of the wet-etching of ZnO thin films were investigated using hydrochloric and phosphoric acid solutions as etchants. The etch rate of ZnO films, using highly diluted hydrochloric acid solutions at a concentration of 0.25% in deionized water, was determined to be about 120 nm/min, and linearly increased with increasing the acid concentration, resulting in $1.17{\mu}m/min$ when a 2% HCl solution was used. The surface of ZnO etched by an HCl solution, observed by scanning electron microscopy, showed a rough morphology with a high density of hexagonal pyramids or cones with sidewall angles of about ${\sim}45^{\circ}C$. Moreover, the sidewall angles of the masked area were similar to those of the pyramids on the surface. In comparison, the surface of ZnO etched by a phosphoric acid had a smooth surface morphology. The origin of this difference is from the very initial stage of etching, indicating that the etch-mechanism is different for each solution. Furthermore, when $H_3PO_4$ was added to the HCl aqueous solution, the morphology of the etched surface was greatly enhanced and the sidewall angle was also increased to about $65^{\circ}C$.

Block Copolymer (PS-b-PMMA) Etching Using Cl2/Ar Gas Mixture in Neutral Beam System (Cl2/Ar gas mixture 중성빔을 이용한 블록공중합체 식각 연구)

  • Yun, Deok-Hyeon;Kim, Gyeong-Nam;Seong, Da-In;Park, Jin-U;Kim, Hwa-Seong;Yeom, Geun-Yeong
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.332-332
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    • 2015
  • Block Copolymer lithography는 deep nano-scale device 제작을 위한 기존의 top-down방식의 photo-lithography를 대체할만한 기술로 많은 연구가 진행되고 있다. polystyrene(PS)/poly-methyl methacrylate (PMMA)로 구성된 BCP의 nano-scale PS mask는 일반적인 플라즈마 공정에 쉽게 damage를 입는다. 중성빔 식각을 이용하여 식각 공정 중 발생하는 BCP의 degradation을 감소시키고, 비등방성 식각 profile을 얻을 수 있으며 sidewall roughness(SWR)와 sidewall angle(SWA)가 향상되는 것을 알 수 있었다.

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