• Title, Summary, Keyword: Sputtering

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The influence of sputtering rate during depth profiling (Depth Profiling에서 Sputtering Rate의 영향)

  • 김주광;성인복;김태준;오상훈;강석태
    • Journal of the Korean Vacuum Society
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    • v.12 no.3
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    • pp.162-167
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    • 2003
  • To find the concentration according to the depth-direction of ions implanted in the sample, with sputtering of the sample surface, one needs the depth profiling of ion implanted in the sample. On measuring of depth profiling, the sputtering rate to affect depth direction, is calculated by SRIM simulation. When ion is implanted in the sample, the atomic density of the sample rises up a little, and it alters sputtering yield. This alteration then causes differences of sputtering rate to affect depth-direction, on measuring of depth profiling. With the usage of SRIM Monte Carlo simulation code, one calculates sputtering rate, with sputtering yield by the alteration of atomic density of the sample through ion implantation. As a result, it goes to prove that its difference affects depth distribution, on measuring of depth profiling.

The effect of deposition condition on the oxidation of TbFeCo thin films in facing targets sputtering system (Facing targets sputtering system에서 TbFeCo박막의 산화에 미치는 제조조건의 영향)

  • 문정탁;김명한
    • Electrical & Electronic Materials
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    • v.7 no.6
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    • pp.511-519
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    • 1994
  • The effect of the deposition conditions, such as the base pressure, working pressure, sputtering power, pre-sputtering, and deposition thickness in facing targets sputtering system(FTS), on the oxidation of the TbFeCo thin films was studied by investigating the magneto-optical properties as well as oxygen analysis by the AES depth profiles. The results showed that the base pressure did not affect the magnetic properties so much, probably due to the short flight distance of the sputtered particles. At the higher sputtering power and lower working pressure with pre-sputtering the oxidation of TbFeCo thin films was decreased. As the film thickness increased the TbFeCo thin films showed the perpendicular anisotropy from in-plane anisotropy overcoming the oxidation effect at the beginning of the sputtering.

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Simulation and Characteristic Measurement with Sputtering Conditions of Triode Magnetron Sputter

  • Kim, Hyun-Hoo;Lim, Kee-Joe
    • Transactions on Electrical and Electronic Materials
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    • v.5 no.1
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    • pp.11-14
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    • 2004
  • An rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of E${\times}$B field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

Development of magnetron sputtering system for Al thin film decomposition with high uniformity (고균일 Al 박막 증착을 위한 magnetron sputtering system 개발)

  • Lee, J.H.;Hwang, D.W.
    • Journal of the Korean Vacuum Society
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    • v.17 no.2
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    • pp.165-169
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    • 2008
  • It is very important to decompose uniformly the metal film in semiconductor devices process. The thickness uniformity of the ITO film by standard magnetron sputtering system are about $\pm4%\sim\pm5%$ and the center of the wafer is more thick than the edge of the wafer. We designed and made the discharge electrode structure and controlled the direction of sputtering materials in magnetron sputtering system. The thickness uniformity are increased to $\pm0.8\sim1.3%$ in 4" wafer using the new sputtering gun in magnetron sputtering system. In wafer to wafer thickness uniformity, $\pm$5.3% are increased to $\pm$1.5% using the new sputtering gun. The thickness uniformity of the Al film are about $\pm$1.0% using the new sputtering gun in magnetron sputtering system.

Comparative Study of Nitrogen Incorporated SnO2 Deposited by Sputtering of Sn and SnO2 Targets

  • Kim, Youngrae;Kim, Sarah Eunkyung
    • Journal of the Korean Ceramic Society
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    • v.49 no.5
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    • pp.448-453
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    • 2012
  • Nitrogen-incorporated $SnO_2$ thin films were deposited by rf magnetron sputtering. Comparative structural, electrical and optical studies of thin films deposited by sputtering of the Sn metallic target and sputtering of the $SnO_2$ ceramic target were conducted. The $SnO_2$ thin films deposited by sputtering of the Sn metallic target had a higher electrical conductivity due to a higher carrier concentration than those by sputtering of the $SnO_2$ ceramic target. Structurally the $SnO_2$ thin films deposited by sputtering of the $SnO_2$ ceramic target had a better crystallinity and a larger grain size. This study confirmed that there were distinct and clear differences in electrical, structural, and optical characteristics between $SnO_2$ thin films deposited by reactive sputtering of the Sn metallic target and by direct sputtering of the $SnO_2$ ceramic target.

Characteristic evaluations and production of triode magnetron sputtering system (Triode magnetron sputtering system의 제작 및 특성평가)

  • Kim, H.H.;Lee, M.Y.;Kim, K.T.;Yoon, S.H.;Yoo, H.K.;Kim, J.M.;Park, C.H.;Lim, K.J.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.787-790
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    • 2003
  • A rf triode magnetron sputtering system is designed and installed its construction in vacuum chamber. In order to calibrate the rf triode magnetron sputtering for thin films deposition processes, the effects of different glow discharge conditions were investigated in terms of the deposition rate measurements. The basic parameters for calibrating experiment in this sputtering system are rf power input, gas pressure, plasma current, and target-to-substrate distance. Because a knowledge of the deposition rate is necessary to control film thickness and to evaluate optimal conditions which are an important consideration in preparing better thin films, the deposition rates of copper as a testing material under the various sputtering conditions are investigated. Furthermore, a triode sputtering system designed in our team is simulated by the SIMION program. As a result, it is sure that the simulation of electron trajectories in the sputtering system is confined directly above the target surface by the force of $E{\times}B$ field. Finally, some teats with the above 4 different sputtering conditions demonstrate that the deposition rate of rf triode magnetron sputtering is relatively higher than that of the conventional sputtering system. This means that the higher deposition rate is probably caused by a high ion density in the triode and magnetron system. The erosion area of target surface bombarded by Ar ion is sputtered widely on the whole target except on both magnet sides. Therefore, the designed rf triode magnetron sputtering is a powerful deposition system.

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The transient sputtering yield change of an amorphous Si layer by low energy $O_2^{+}$ and $Ar^{+}$ ion bombardment

  • Shin, Hye-Chung;Kang, Hee-Jae;Lee, Hyung-Ik;Moon, Dae-Won
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.92-94
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    • 2003
  • The sputtering yield change of an amorphous Si layer on Si(100) was measured quantitatively for 0.5 keV $O_2^{+}$ and $Ar^{+}$ ion bombardment with in suit MEIS. In the case of 0.5 keV $O_2^{+}$ ion bombardment, at the initial stage of sputtering before surface oxidation, the sputtering yield of Si was 1.4 (Si atoms/$O_2^{+}$) and then decreased down to 0.06 at the ion dose of $3\times10^{16}O_2\;^{+}\textrm{/cm}^2$. In the case of 0.5 keV $Ar^{+}$ ion bombardment, the sputtering yield of Si for the surface normal incidence was 0.56 at the ion dose of 2.5 ${\times}$ 10$^{15}$ $Ar^{+}\textrm{cm}^2$, and rapidly saturated to 1.2 at dose of $7.5\times10^{15}Ar^+\textrm{cm}^2$. For the incidence angle of 80 from surface normal, the sputtering yield of Si was saturated to about 1.4 at the initial stage of sputtering. The surface transient effects, caused by change in sputtering yield at the initial stage of sputtering can be negligible when 0.5 keV $Ar^{+}$ ion at extremely grazing angle was used for sputter depth profiling.g.

Effects of Sputtering pressure on preferred Orientation of Shielding NbTi Thin Film by RF Magnetron Sputtering (RF 마그네트론 스퍼터링법으로 제조된 차폐용 NbTi박막의 우선방향에 미치는 스퍼터링 압력의 영향)

  • Kim, Bong-Seo;Woo, Byung-Chul;Byun, Woo-Bong;Lee, Hee-Woong
    • Proceedings of the KIEE Conference
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    • pp.1098-1101
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    • 1995
  • NbTi thin films were prepared on Si wafer and Cu substrate by rf magnetron sputtering in the range of sputtering pressure $3{\times}10^{-2}$torr to $3{\times}10^{-4}$torr at room temperature. The influence of sputtering pressure and substrate type on crystallographic orientation and morphology of NbTi thin films was investigated by using X-ray diffraction(XRD) and scanning electron microscopy(SEM), respectively. And the effect of crystallographic orientation and morphology of NbTi film on electromagnetic behaviors was estimated by measuring critical current in various applied magnetic field. The film morphology changed from porous structure consisting of tapered crystallites to densely deposited film decreasing with sputtering pressure. The change of crystallographic orientation with the sputtering pressure and rf power was calculated from the texture coefficient of(002) plane based on XRD patterns. It was found that a change of texture coefficient of(002) plane increased with decreasing sputtering pressure. From observation of critical current in various applied magnetic field, we have identified that the change of critical current abruptly decrease applying with magnetic field and NbTi film produced at high sputtering pressure does not exhibit superconductivity but at low sputtering pressure shows superconductivity.

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Deposition for PET Fabric of Macban Stone with RF Sputtering (RF Sputtering을 이용한 맥반석의 PET 직물에의 증착)

  • Lee, Hye-Ryeon;Choi, Soon-Hwa
    • Fashion & Textile Research Journal
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    • v.8 no.1
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    • pp.129-133
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    • 2006
  • To develope a high value-added fiber products which is useful in the human body physiology, the Macban stone was deposited on the PET fabric by sputtering and its effects were investigated. Then, a Macban stone target was prepared for sputtering treatment and treated on the PET fabric by RF sputtering process. After treatment, surface observation by SEM, far-infrared emissivity and emissive power, the fastness to washing and light, bacteriostatic rate, electrostatic, drape stiffness, and breaking strength of PET fabric were investigated. From these investigation, the following conclusions were obtained. 1) The Macban stone was able to deposit on the PET fabric, by the RF sputtering treatment which is eco-friendly dry textile finishing. 2) The far-infrared emissivity and emissive power of sputtered PET fabrics were increased. 3) When PET fabric was treated by sputtering with Macban stone, the amount of deposited Macban stone increased with increasing treatment time and it was deposited on the fabric surface firmly. 4) The bacteriostatic rate of sputtered PET fabrics was about 20%. 5) The electrostatic charge of fiber surface was reduced by sputtering. 6) The fastness washing to light of dyed fabric were improved by the deposition of Macban stone, but the breaking strength was not changed by sputtering. 7) The drape stiffness of sputtered PET fabrics increased with increasing treatment time.

Growth of p-ZnO by RF-DC magnetron co-sputtering (RF-DC magnetron co-sputtering법에 의한 p-ZnO 박막의 성장)

  • Kang Seung Min
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.14 no.6
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    • pp.277-280
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    • 2004
  • p-ZnO films have been grown on (0001) sapphire substrates by RF-DC magnetron co-sputtering. The p-ZnO single crystalline thin films of the thickness about 120 nm were grown successfully. The dopant (Aluminum) was sputtered simultaneously from Al metal target by DC sputtering during rf-magnetron sputtering of ZnO at the substrate temperatures of $400^{\circ}C$ and $600^{\circ}C$ respectively. The crystallinity and optical properties of as-grown P-ZnO films have been characterized.