• Title, Summary, Keyword: Temperature sensor

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Signal Change and Compensation of Pulse Pressure Sensor Array Due to Wrist Surface Temperature (손목 피부 온도에 의한 맥센서 어레이(array)의 신호 변동 및 보정)

  • Jun, Min-Ho;Jeon, Young Ju;Kim, Young-Min
    • Journal of Sensor Science and Technology
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    • v.26 no.2
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    • pp.141-147
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    • 2017
  • A pressure sensor in pulse measurement system is a core component for precisely measuring the pulse waveform of radial artery. A pulse sensor signal that measures the pulse wave in contact with the skin is affected by the temperature difference between the ambient temperature and skin surface. In this study, we found experimentally that the signal changes of the pressure sensors and a temperature sensor were caused by the temperature of the wrist surface while the pressure sensor was contacted on the skin surface for measuring pulse wave. To observe the signal change of the pulse sensor caused by temperature increase on sensor surface, Peltier device that can be kept at a set temperature was used. As the temperature of Peltier device was kept at $35^{\circ}C$ (the maximum wrist temperature), the device was put on the pulse sensor surface. The temperature and pressure signals were obtained simultaneously from a temperature sensor and six pressure sensors embedded in the pulse sensor. As a result of signal analysis, the sensor pressure was decreased during temperature increase of pulse sensor surface. In addition, the signal difference ratio of pressure and temperature sensors with respect to thickness of cover layer in pulse sensor was increased exponentially. Therefore, the signal of pressure sensor was modified by the compensation equation derived by the temperature sensor signal. We suggested that the thickness of cover layer in pulse sensor should be designed considering the skin surface temperature.

A High Accuracy and Fast Hybrid On-Chip Temperature Sensor (고정밀 고속 하이브리드 온 칩 온도센서)

  • Kim, Tae-Woo;Yun, Jin-Guk;Woo, Ki-Chan;Hwang, Seon-Kwang;Yang, Byung-Do
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.20 no.9
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    • pp.1747-1754
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    • 2016
  • This paper presents a high accuracy and fast hybrid on-chip temperature sensor. The proposed temperature sensor combines a SAR type temperature sensor with a ${\Sigma}{\Delta}$ type temperature sensor. The SAR type temperature sensor has fast temperature searching time but it has more error than the ${\Sigma}{\Delta}$ type temperature sensor. The ${\Sigma}{\Delta}$ type temperature sensor is accurate but it is slower than the SAR type temperature sensor. The proposed temperature sensor uses both the SAR and ${\Sigma}{\Delta}$ type temperature sensors, so that the proposed temperature sensor has high accuracy and fast temperature searching. Also, the proposed temperature sensor includes a temperature error compensating circuit by storing the temperature errors in a memory circuit after chip fabrication. The proposed temperature sensor was fabricated in 3.3V CMOS $0.35{\mu}m$ process. Its temperature resolution, power consumption, and area are $0.15^{\circ}C$, $540{\mu}W$, and $1.2mm^2$, respectively.

An Integrated Sensor for Pressure, Temperature, and Relative Humidity Based on MEMS Technology

  • Won Jong-Hwa;Choa Sung-Hoon;Yulong Zhao
    • Journal of Mechanical Science and Technology
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    • v.20 no.4
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    • pp.505-512
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    • 2006
  • This paper presents an integrated multifunctional sensor based on MEMS technology, which can be used or embedded in mobile devices for environmental monitoring. An absolute pressure sensor, a temperature sensor and a humidity sensor are integrated in one silicon chip of which the size is $5mm\times5mm$. The pressure sensor uses a bulk-micromachined diaphragm structure with the piezoresistors. For temperature sensing, a silicon temperature sensor based on the spreading-resistance principle is designed and fabricated. The humidity sensor is a capacitive humidity sensor which has the polyimide film and interdigitated capacitance electrodes. The different piezoresistive orientation is used for the pressure and temperature sensor to avoid the interference between sensors. Each sensor shows good sensor characteristics except for the humidity sensor. However, the linearity and hysteresis of the humidity sensor can be improved by selecting the proper polymer materials and structures.

Small CMOS Temperature Sensor Using MOSFETs in the Intermediate-Inversion Region

  • Park, Tai-Soon;Park, Sang-Gyu
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1086-1087
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    • 2009
  • A small temperature sensor is designed in a 0.35um CMOS process. Transistors operating in the intermediate inversion region are employed in the core of the sensor. This temperature sensor operates in $-50^{\circ}C{\sim}120^{\circ}C$ with ${\pm}2^{\circ}C$ of accuracy after two-point calibration. This temperature sensor can be placed in the active pixel area of a display panel to measure the temperature of the display panel for temperature compensation.

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Thermal characteristics of high-temperature measurement sensor using fiber Bragg grating (FBG를 이용한 고온 측정 센서의 온도특성)

  • Son, Yong-Hwan;Han, Sang-Kook
    • Journal of Sensor Science and Technology
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    • v.17 no.4
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    • pp.261-266
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    • 2008
  • In this paper, we present thermal characteristics of high-temperature measurement sensor using fiber Bragg grating(FBG), including peak reflectivity, FWHM bandwidth and various normalized refractive index change along temperature variation. The temperature stability of FBG temperature sensor can be changed by varying the refractive index change and grating length. The proposed FBG temperature sensor can measure up to about $600^{\circ}C$ and 1000 hours of heating time.

Fabrication of a multi-functional one-chip sensor for detecting water depth, temperature, and conductivity (수위, 온도, 전도도 측정을 위한 다기능 One-Chip 센서의 제조)

  • Song, Nak-Chun;Cho, Yong-Soo;Choi, Sie-Young
    • Journal of Sensor Science and Technology
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    • v.15 no.1
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    • pp.7-12
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    • 2006
  • The multi-functional one-chip sensor has been fabricated to reduce output variation under various water environment. There were a temperature sensor, a piezoresistive type pressure sensor, and a electrode type conductivity sensor in the fabricated one-chip sensor. This sensor was measured water depth in the range of $0{\sim}180cm$, temperature in the range of $0{\sim}50^{\circ}C$, and salinity in the range of 0 $0wt%{\sim}5wt%$, respectively. Since the change of water depth in solution environment depends on various factors such as salinity, latitude, temperature, and atmospheric pressure, the water depth sensor is needed to be compensated. We tried to compensate the salinity and temperature dependence for the pressure in water by using lookup-table method.

A CMOS-based Temperature Sensor with Subthreshold Operation for Low-voltage and Low-power On-chip Thermal Monitoring

  • Na, Jun-Seok;Shin, Woosul;Kwak, Bong-Choon;Hong, Seong-Kwan;Kwon, Oh-Kyong
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.1
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    • pp.29-34
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    • 2017
  • A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

Design of sensing .element of bio-mimetic tactile sensor for measurement force and temperature (힘과 온도 측정을 위한 생체모방형 촉각센서 감지부 설계)

  • 김종호;이상현;권휴상;박연규;강대임
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.1029-1032
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    • 2002
  • This paper describes a design of a tactile sensor, which can measure three components force and temperature due to thermal conductive. The bio-mimetic tactile sensor, alternative to human's finger, is comprised of four micro force sensors and four thermal sensors, and its size being 10mm$\times$10mm. Each micro force sensor has a square membrane, and its force range is 0.1N - 5N in the three-axis directions. On the other hand, the thermal sensor for temperature measurement has a heater and four temperature sensor elements. The thermal sensor is designed to keep the temperature. $36.5^{\circ}C$, constant, like human skin, and measure the temperature $0^{\circ}C$ to $50^{\circ}C$. The MEMS technology is applied to fabricate the sensing element of the tactile sensor.

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Fiber-optic interferometric temperature sensor using a hollow fiber (중공 광섬유를 이용한 광섬유 간섭계형 온도센서)

  • Park, Jae-Hee;Kim, Kwang-Taek
    • Journal of Sensor Science and Technology
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    • v.16 no.3
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    • pp.192-196
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    • 2007
  • A fiber-optic interferometric temperature sensor is fabricated using a hollow optical fiber with 8 um air hole. This interferometric sensor for measuring temperature consists of 13 mm long hollow optical fiber whose one end is attached to the single mode fiber and the other end is cleaved. After the sensor is put in a furnace, the phase change of the sensor output signal is measured as the temperature of the furnace increases from $28^{\circ}C$ to $100^{\circ}C$. The phase change of the fiber sensor is proportional to the change of temperature and the relationship between the change of phase and temperature is approximately linear. The sensitivity of this sensor is $2.7{\;}radians/^{\circ}C$.

Temperature sensor without reference resistor by indium tin oxide and molybdenum (인듐틴옥사이드와 몰리브데늄을 이용한 외부 기준 저항이 필요 없는 온도센서)

  • Jeon, Ho-Sik;Bae, Byung-Seong
    • Journal of Sensor Science and Technology
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    • v.19 no.6
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    • pp.483-489
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    • 2010
  • Display quality depends on panel temperatures. To compensate it, temperature sensor was integrated on the panel. The conventional temperature sensor integrated on the panel needs external reference resistor. Since the resistance of external resistor can vary according to the variation of the environment temperature, the conventional temperature sensor can make error in temperature sensing. The environmental temperatures can change by the back light unit, driving circuits or chips. In this paper, we proposed a integrated temperature sensor on display panel which does not need external reference resister. Instead of external reference resistor, we used two materials which have different temperature coefficient in resistivity. They are connected serially and the output voltage was measured at the point of connection with the applied voltage to both ends. The proposed sensor was fabricated with indium tin oxide(ITO), and Mo metal electrode temperature sensor which were connected serially. We verified the temperature senor by the measurements of sensitivity, lineality, hysteresis, repeatability, stability, and accuracy.