• Title, Summary, Keyword: TiAl

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Solid Solution Phenomena of Al+Al3Ti Alloy and Al+10wt.%Ti Alloy using Mechanical Alloying Process (기계적 합금화법에 의해 제조된 Al+Al3Ti합금 및 Al+10wt.%Ti합금의 고용현상)

  • Kim, Hye-Sung;Lee, Jung-Ill;Kim, Gyeung-Ho;Kum, Dong-Wha;Shur, Dong-Soo
    • Journal of the Korean Society for Heat Treatment
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    • v.9 no.2
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    • pp.121-129
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    • 1996
  • The solubility of Ti in Al matrix was determined by X-ray diffraction method on two different mechanical alloying systems, i.e Al+$Al_3Ti$ and Al+Ti alloys. Starting powder compositions of two systems were chosen for final volume fraction of $Al_3Ti$ phase being 25%. The solubility of Ti in ${\alpha}$-Al was estimated by the lattice parameter measurement of Al. For Al+$Al_3Ti$ mixture, it appeared that some of $Al_3Ti$ particles decomposed during milling and maximum solubility of Ti in Al was about 0.99%. The majority of $Al_3Ti$ particles were dispersed uniformly in Al matrix, having approximate size of 100~200 nm. On the other hand, higher Ti solubility of 1.24 wt.% was found in Al+Ti system, with starting composition of Al+10 wt.%Ti. After 15 hours of milling, Ti phase was identified as 20 nm sized particles embedded in Al matrix. The annealing of mechanically alloyed powders from Al+$Al_3Ti$ and Al+10 wt.%Ti systems was followed in the temperature range of 200 to $600^{\circ}C$ to study thermal stability of supersaturated solution of Al(Ti). After annealing, the lattice parameter of Al reverted back to that of pure Al, and the peak intensity ratio of $Al_3Ti$/Al was increased more than the original value before annealing. These results suggest that Ti dissolve into alpha-Al solutions during milling, and by annealing, $Do_{22}-Al_3Ti$ phase forms from Al(Ti) solution.

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Characteristics of TiAlN Film on Different Buffer Layer by D.C Magnetron Sputter (D.C magnetron sputter법으로 증착된 TiAlN의 중간층에 따른 특성연구)

  • Kim, Myoung-Ho;Lee, Doh-Jae;Lee, Kwang-Min;Kim, Woon-Sub;Kim, Min-Ki;Park, Burm-Su;Yang, Kook-Hyun
    • Korean Journal of Materials Research
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    • v.18 no.10
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    • pp.558-563
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    • 2008
  • TiAlN films were deposited on WC-5Co substrates with different buffer layers by D.C. magnetron sputtering. The films were evaluated by microstructural observations and measuring of preferred orientation, hardness value, and adhesion force. As a process variable, various buffer layers were used such as TiAlN single layer, TiAlN/TiAl, TiAlN/TiN and TiAlN/CrN. TiAlN coating layer showed columnar structures which grew up at a right angle to the substrates. The thickness of the TiAlN coating layer was about $1.8{\mu}m$, which was formed for 200 minutes at $300^{\circ}$. XRD analysis showed that the preferred orientation of TiAlN layer with TiN buffer layer was (111) and (200), and the specimens of TiAlN/TiAl, TiAlN/CrN, TiAlN single layer have preferred orientation of (111), respectively. TiAlN single layer and TiAlN/TiAl showed good adhesion properties, showing an over 80N adhesion force, while TiAlN/TiN film showed approximately 13N and the TiAlN/CrN was the worst case, in which the layer was destroyed because of high internal residual stress. The value of micro vickers hardness of the TiAlN single layer, TiAlN/TiAl and TiAlN/TiN layers were 2711, 2548 and 2461 Hv, respectively.

High Temperature Oxidation of TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN Thin Films (TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막의 고온산화)

  • Kim, Min-Jeong;Park, Sun-Yong;Lee, Dong-Bok
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.192-192
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    • 2014
  • TiN, Ti(C,N), TiAlSiN, TiZrAlN, TiAlCrSiN 박막을 제조한 후, 이 들의 고온산화 특성을 SEM, EPMA, TGA, TEM, AES 등을 이용하여 조사하고, 산화기구를 제안하였다. 산화속도, 생성되는 산화물의 종류와 분포는 박막의 조성, 산화온도, 산화시간에 따라 변하였다.

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Reaction Synthesis of Ti3AlC2 at High Temperature (고온 반응에 의한 Ti3AlC2합성)

  • 황성식;박상환;한재호;한경섭;김태우
    • Journal of the Korean Ceramic Society
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    • v.40 no.1
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    • pp.87-92
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    • 2003
  • $Ti_3AlC_2$was synthesized from TiCx and Al powder as a starting materials at the temperature range between$800^{circ}C;and;1500^{\circ}C$. The vacuum sintering and hot pressing methods were imployed to synthesize$Ti_3AlC_2$. The high purity$Ti_3AlC_2$was synthesized using TiCx and Al powder as starting materials without formation of Ti-Al intermetallic compound and Al-C compound.$Ti_2$AlC and$Ti_3AlC_2$were preferentially synthesized at$800^{\circ}C$and above$1200^{\circ}C$, respectively.$Ti_2$AlC formed at low temperature was transformed to$Ti_3AlC_2$by further reaction with TiC. In this study, the synthesis mechanism for$Ti_3AlC_2$was proposed. The synthesized$Ti_3AlC_2$showed the nano laminating structure consisting of$Ti_3AlC_2$crystal with the thickness of 45~120 nm.

Effects of Ti or Ti/TiN Underlayers on the Crystallographic Texture and Sheet Resistance of Aluminum Thin Films (Ti 또는 Ti/TiN underlayer가 Al 박막의 배향성 및 면저항에 미치는 영향)

  • Lee, Won-Jun;Rha, Sa-Kyun
    • Korean Journal of Materials Research
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    • v.10 no.1
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    • pp.90-96
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    • 2000
  • The effects of the type and thickness of underlayers on the crystallographic texture and the sheet resistance of aluminum thin films were studied. Sputtered Ti and Ti/TiN were examined as the underlayer of the aluminum films. The texture and the sheet resistance of the metal thin film stacks were investigated at various thicknesses of Ti or TiN, and the sheet resistance was measured after annealing at $400^{\circ}C$ in an nitrogen ambient. For the Ti underlayer, the minimum thickness to obtain excellent texture of aluminum <111> was 10nm, and the sheet resistance of the metal stack was greatly increased after annealing due to the interdiffusion and reaction of Al and Ti. TiN between Ti and Al could suppress the Al-Ti reaction, while it deteriorated the texture of the aluminum film. For the Ti/TiN underlayer, the minimum Ti thickness to obtain excellent texture of aluminum <111> was 20nm, and the minimum thickness of TiN to function as a diffusion barrier between Ti and Al was 20nm.

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A Study on the Phase Transformations of (TiAl)N Films Deposited by TFT Sputtering System (TFT(Two-Facing-Targets) 스퍼터장치에 의해 증착된 (TiAl)N 박막의 상변태에 관한 연구)

  • Han, Chang-Suk
    • Journal of the Korean Society for Heat Treatment
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    • v.18 no.5
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    • pp.281-287
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    • 2005
  • Titanium aluminium nitride((TiAl)N) film is anticipated as an advanced coating film with wear resistance used for drills, bites etc. and with corrosion resistance at a high temperature. In this study, (TiAl)N thin films were deposited both at room temperature and at elevated substrate temperatures of 573 to 773 K by using a two-facing-targets type DC sputtering system in a mixture Ar and $N_2$ gases. Atomic compositions of the binary Ti-Al alloy target is Al-rich (25Ti-75Al (atm%)). Process parameters such as precursor volume %, substrate temperature and Ar/$N_2$ gas ratio were optimized. The crystallization processes and phase transformations of (TiAl)N thin films were investigated by X-ray diffraction, field-emission scanning electron microscopy. The microhardness of (TiAl)N thin films were measured by a dynamic hardness tester. The films obtained with Ar/$N_2$ gas ratio of 1:3 and at 673 K substrate temperature showed the highest microhardness of $H_v$ 810. The crystallized and phase transformations of (TiAl)N thin films were $Ti_2AlN+AlN{\rightarrow}TiN+AlN$ for Ar/$N_2$ gas ratio of 1:3, $Ti_2AlN+AlN{\rightarrow}TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 1:1 and $TiN+AlN{\rightarrow}Ti_2AlN+TiN+AlN{\rightarrow}Ti_2AlN+AlN{\rightarrow}Ti_2AlN+TiN+AlN$ for Ar/$N_2$ gas ratio of 3:1. The above results are discussed in terms of crystallized phases and microhardness.

SULFIDATION PROCESSING AND Cr ADDITION TO IMPROVE OXIDATION RESISTANCE OF Ti-Al INTERMETALLIC COMPOUNDS AT ELEVATED TEMPERATURES

  • Narita, Toshio;Izumi, Takeshi;Yatagai, Mamoru;Yoshioka, Takayuki
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • pp.5-5
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    • 1999
  • A novel process is proposed to improve oxidation resistance of Ti-Al intermetallic compounds at elevated temperatures by both Cr addition and pre-sulfidation, where TiAl alloys withlor without Cr addition were sulfidized at 1173K for 86.4ks at a 1.3 Pa sulfur partial pressure in a $H_2-H_2S$ gas mixture. The pre-sulfidation treatment formed a thin Cr-Al alloy layer as well as 7~10 micrometer $TiAl_3$ and $TiAl_2$ layer, due to selective sulfidation of Ti. Oxidation resistance of the pre-sulfidation processed TiAl 4Cr alloy was examined under isothermal and heat cycle conditions between room temperature and 1173K in air. Changes in $TiAl_3$ into $TiAl_2$ and then TiAl phases as well as their effect on oxidation behavior were investigated and compared with the oxidation behavior of the TiAl-4Cr alloy as TiAl and pre-sulfidation processed TiAl aHoys. After oxidation for up to 2.7Ms a protective $Al_2O_3$ scale was formed, and the pre-formed $TiAl_3$ changed into $TiAl_2$ and the $Al_2Cr$ phase changed into a CrAlTi phase between the $Al_2O_3$ scale and $TiAl_2$ layer. The pre-sulfidation processed TiAl-4Cr alloy had very good oxidation resistance for longer times, up to 2.7 Ms, in contrast to those observed for the pre-sulfidation processed TiAl alloy where localized oxidation occurred after 81 Oks and both the TiAl and TiAl-4Cr alloys themselves corroded rapidly from the initial stage of oxidation

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Synthesis of (Ti,Al)N Powder by the Direct Nitridation(II) (직접질화법에 의한 (Ti,Al)N계 복합질화물의 합성(II))

  • Cho, Young-Soo;Lee, Young-Ki;Sohn, Yong-Un;Park, Kyong-Ho;Kim, Seok-Yoon
    • Journal of the Korean Society for Heat Treatment
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    • v.9 no.3
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    • pp.219-227
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    • 1996
  • The purpose of this research is to develop the technology for the synthesis of (Ti,Al)N powder, which shows simultaneously the excellent properties of TiN and AlN, from the Ti-Al intermetallic compounds by the direct nitriding method. The effects of variables such as temperature, Ti-Al intermetallic compounds ($TiAl_3$, TiAl and $Ti_3Al$) were investigated by TG, XRD and SEM. The (Ti,Al)N powder can be easily synthesized from the intermetallic compounds by the direct nitriding method. Among the intermetallic compounds, the nitriding behavior increased with TiAl> $Ti_3Al$ > $TiAl_3$, as the difference of diffusion coefficient for nitrogen in each materials. The ternary nitride such as $Ti_2AlN$ and $Ti_3Al_2N_2$ can be synthesized by the direct nitriding method, although the ternary nitride coexist with TiN and AlN. The ternary nitrides are stable below $1400^{\circ}C$, but these are gradually decomposed into TiN and AlN above $1400^{\circ}C$.

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Effect of Aluminium Content on High Temperature Deformation Behavior of TiAl Intermetallic Compound

  • Han, Chang-Suk
    • Korean Journal of Materials Research
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    • v.25 no.8
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    • pp.398-402
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    • 2015
  • Fundamental studies of microstructural changes and high temperature deformation of titanium aluminide (TiAl) were conducted from the view point of the effect of Al content in order to develop the manufacturing process of TiAl. Microstructures in an as cast state consisted mainly of lamellar structure irrespective of Al content. By homogenization at 1473 K, the microstructures of Ti-49Al and Ti-51Al were transformed into an equiaxial structure which was composed of ${\gamma}$-TiAl, while the lamellar structure that was observed in Ti-46Al and Ti-47Al was much more stable. We found that the reduction of Al content suppressed the formation of equiaxial grains and resulted in a microstructure of only a lamellar structure. On Ti-49Al and Ti-51Al, dynamic recrystallization occurred during high temperature deformation, and the microstructure was transformed into a fine equiaxial one, while the microstructures of Ti-46Al and Ti-47Al contained few recrystallized grains and consisted mainly of a deformed lamellar structure. We observed that on the low-Al alloys the lamellar structure under hard mode deformation conditions deformed as kink observed B2-NiAl. High temperature deformation characteristics of TiAl were strongly affected by Al content. An increase of Al content resulted in a decrease of peak stress and activation energy for plastic deformation and an increase of the recrystallization ratio in TiAl.

Manufacture of SiC-TiC System Composite by the Reaction-Bonded Sintering (반응결합 소결에 의한 SiC-TiC계 복합재료 제조)

  • 한인섭;김홍수;우상국;양준환;정윤중
    • Journal of the Korean Ceramic Society
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    • v.31 no.8
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    • pp.849-860
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    • 1994
  • The microstructural evolution and crystalline phases of this infiltration of Ti+Al liquids in TiC, SiC, TiC+C, and SiC+C preforms have been investigated. As the Ti and Al mixing ratio in Ti+Al infiltrated liquid changes, the newly formed reaction products, which were reacted from the Ti+Al liquid with preforms, consisted of three major phases as Ti3AlC, Al2Ti4C2 or Al4C3. The TiC grain shape was changed to spheroid, when Ti3AlC was formed. In case of Al2Ti4C2 formation, the platelet grain was formed from the original TiC grain. When Al4C3 was formed, nodular or intergranular fine-grained Al4C3 was formed around the TiC grain, while the original TiC grain shape was not changed.

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