• Title, Summary, Keyword: Tin-Oxide

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Recycling Method of Used Indium Tin Oxide Targets (폐 인듐주석산화물 타겟의 재활용 기술)

  • Lee, Young-In;Choa, Yong-Ho
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.174-179
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    • 2012
  • In this study, we demonstrated a simple and eco-friendly method, including mechanical polishing and attrition milling processes, to recycle sputtered indium tin oxide targets to indium tin oxide nanopowders and targets for sputtered transparent conductive films. The utilized indium tin oxide target was first pulverized to a powder of sub- to a few- micrometer size by polishing using a diamond particle coated polishing wheel. The calcination of the crushed indium tin oxide powder was carried out at $1000^{\circ}C$ for 1 h, based on the thermal behavior of the indium tin oxide powder; then, the powders were downsized to nanometer size by attrition milling. The average particle size of the indium tin oxide nanopowder was decreased by increasing attrition milling time and was approximately 30 nm after attrition milling for 15 h. The morphology, chemical composition, and microstructure of the recycled indium tin oxide nanopowder were investigated by FE-SEM, EDX, and TEM. A fully dense indium tin oxide sintered specimen with 97.4% of relative density was fabricated using the recycled indium tin oxide nanopowders under atmospheric pressure at $1500^{\circ}C$ for 4 h. The microstructure, phase, and purity of the indium tin oxide target were examined by FE-SEM, XRD, and ICP-MS.

The Fabrication of Tin Oxide Films by Atomic Layer Deposition using Tetrakis(Ethylmethylamino) Tin Precursor

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.10 no.6
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    • pp.200-202
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    • 2009
  • Tin oxide thin films were prepared by atomic layer deposition using a tetrakis(ethylmethylamino) tin precursor without any seed layer. The average growth rate of tin oxide film is about 1.2 A/cycle from $50{^{\circ}C}$ to $150{^{\circ}C}$. The rate decreases rapidly at a substrate temperature of $200{^{\circ}C}$. ALD-grown tin oxide thin film was characterized with the use of XRD, AFM and XPS. Due to a thermal annealing effect, the surface roughness and the tin amount in the film composition are slightly increased.

Fabrication of Nano-Channeled Tin Oxide Film Electrode and Evaluation of Its Electrochemical Properties (나노 채널 구조를 가진 산화 주석 박막 전극 제조 및 전기화학적 특성 평가)

  • Park, Su-Jin;Shin, Heon-Cheol
    • Korean Journal of Materials Research
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    • v.22 no.1
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    • pp.1-7
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    • 2012
  • Thin film electrode consisting purely of porous anodic tin oxide with well-defined nano-channeled structure was fabricated for the first time and its electrochemical properties were investigated for application to an anode in a rechargeable lithium battery. To prepare the thin film electrode, first, a bi-layer of porous anodic tin oxides with well-defined nano-channels and discrete nano-channels with lots of lateral micro-cracks was prepared by pulsed and continuous anodization processes, respectively. Subsequent to the Cu coating on the layer, well-defined nano-channeled tin oxide was mechanically separated from the specimen, leading to an electrode comprised of porous tin oxide and a Cu current collector. The porous tin oxide nearly maintained its initial nano-structured character in spite of there being a series of fabrication steps. The resulting tin oxide film electrode reacted reversibly with lithium as an anode in a rechargeable lithium battery. Moreover, the tin oxide showed far more enhanced cycling stability than that of powders obtained from anodic tin oxides, strongly indicating that this thin film electrode is mechanically more stable against cycling-induced internal stress. In spite of the enhanced cycling stability, however, the reduction in the initial irreversible capacity and additional improvement of cycling stability are still needed to allow for practical use.

Effect of a seed layer on atomic layer deposition-grown tin oxide

  • Choi, Woon-Seop
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.128-128
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    • 2009
  • The effect of seed layer on the preparation of tin oxide thin film by ALD using tetrakis(ethylmethylamino) tin precursor was examined. The average growth rate of tin oxide film is about 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreases at the substrate temperature at $200^{\circ}C$. The seed effect was not observed in crystal growth of thin oxide. However, the crystalline growth of seed material in tin oxide was detected by thermal annealing. ALD-grown seeded tin oxide thin film after thermal annealed was characterized by ellipsometry, XRD, AFM and XPS.

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Crystallization of Mesoporous Tin Oxide Prepared by Anodic Oxidation

  • Kim, Eun-Ji;Shin, Heon-Cheol
    • Journal of Electrochemical Science and Technology
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    • v.8 no.1
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    • pp.69-76
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    • 2017
  • Crystallization of one-dimensional porous tin oxide during the anodic oxidation of tin at ambient temperatures is reported. Remarkable crystallinity is achieved when a substrate with a high elastic modulus (e.g., silicon) is used and the tin coating on it is very thin. It is suggested that the compressive stress applied to the anodic tin oxide during the anodization process is the key factor affecting the degree of crystallinity. The measured value of the stress generated during anodization matches well with the range of the most favorable theoretical pressure (stress) for crystallization.

Effects of Seed Layer and Thermal Treatment on Atomic Layer Deposition-Grown Tin Oxide

  • Choi, Woon-Seop
    • Transactions on Electrical and Electronic Materials
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    • v.11 no.5
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    • pp.222-225
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    • 2010
  • The preparation of tin oxide thin films by atomic layer deposition (ALD), using a tetrakis (ethylmethylamino) tin precursor, and the effects of a seed layer on film growth were examined. The average growth rate of tin oxide films was approximately 1.2 to 1.4 A/cycle from $50^{\circ}C$ to $150^{\circ}C$. The rate rapidly decreased at the substrate temperature at $200^{\circ}C$. A seed effect was not observed in the crystal growth of tin oxide. However, crystallinity and the growth of seed material were detected by XPS after thermal annealing. ALD-grown seeded tin oxide thin films, as-deposited and after thermal annealing, were characterized by X-ray diffraction, atomic force microscopy and XPS.

Solution-Processed Zinc-Tin Oxide Thin-Film Transistors for Integrated Circuits

  • Kim, Kwang-Ho;Park, Sung-Kyu;Kim, Yong-Hoon;Kim, Hyun-Soo;Oh, Min-Suk;Han, Jeong-In
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.534-536
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    • 2009
  • We have fabricated solution-processed zinc-tin oxide thin film transistors (TFTs) and simple circuits on glass substrates. We report a solutionprocessed zinc-tin oxide TFTs on silicon wafer with mobility greater than 9 $cm^2/V{\cdot}s$ (W/L = 100/5 ${\mu}m$) and threshold voltage variation of less than 1 V after bias-stressing. Also, we fabricated solution-processed zinc-tin oxide circuits including inverters and 7-stage ring oscillators fabricated on glass substrates using the developed zinc-tin oxide TFTs.

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Research of Thermal Properties for Liquid Crystalline Epoxy Composites with Tin Oxide Filler (산화주석을 함유한 열경화성 액정 에폭시의 열적 특성에 관한 연구)

  • Hyun, Ha Nuel;Cho, Seung Hyun
    • Composites Research
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    • v.33 no.1
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    • pp.25-29
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    • 2020
  • A liquid crystalline thermosetting-epoxy-based composite was fabricated using diglycidyl ether of 4,4'-biphenol, tin(IV) oxide as a filler, and sulfanilamide as a curing agent. To investigate the thermal behavior, Thermogravimetric Analysis and Laser Flash Apparatus were performed using 3.0-7.0 wt% Tin(IV) oxide. The result showed that the activation energy and thermal conductivity were proportional to the amount of added filler.

Electrochemical Properties of Tin oxide-flyash Composite for Lithium Ion Polymer Battery (리튬 이온 폴리머 전지용 Tin oxide-flyash Composite 전극의 전기화학적 특성)

  • Kim, Jong-Uk;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.88-90
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    • 2003
  • The purpose of this study is to research and develop tin oxide-flash composite for lithium Ion polymer battery. Tin oxide is one of the promising material as a electrode active material for lithium Ion polymer battery (LIPB). Tin-based oxides have theoretical volumetric and gravimetric capacities that are four and two times that of carbon, respectively. We investigated cyclic voltammetry and charge/discharge cycling of SnO-flyash/SPE/Li cells. The first discharge capacity of SnO-flyash composite anode was 720 mAh/g. The discharge capacity of SnO-flyash composite anode 412 and 314 mAh/g at cycle 2 and 10 at room temperature, respectively. The SnO-flyash composite anode with PVDF-PMMA-PC-EC-$LiClO_4$ electrolyte showed good capacity with cycling.

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A Study on the Impedance Characteristics and Mechanisms of Li Intecalation on the Tin Oxide-flyash Composite Electrodes (Tin Oxide-flyash Composite 전극의 리튬 이온 Intercalation 메카니즘과 임피던스 특성에 관한 연구)

  • Gu, Hal-Bon;Kim, Jong-Uk
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.11
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    • pp.1224-1229
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    • 2004
  • The purpose of this study is to research and develop tin oxide-flyash composite for lithium Ion polymer battery. Tin oxide is one of the promising material as a electrode active material for lithium Ion polymer battery (LIPB). Tin-based oxides have theoretical volumetric and gravimetric capacities that are four and two times that of carbon, respectively. We investigated cyclic voltammetry, AC impedance and charge/discharge cycling of SnO$_2$-flyash/SPE/Li cells. The first discharge capacity of SnO$_2$-flyash composite anode was 639 mAh/g. The discharge capacity of SnO$_2$-flyash composite anode was 563 and 472 mAh/g at 6th and 15th cycle, respectively. The SnO$_2$-flyash composite anode with PVDF-PMMA-PC-EC-LiClO$_4$ electrolyte showed good capacity with cycling.