• Title, Summary, Keyword: Transparent device

Search Result 302, Processing Time 0.049 seconds

Functional Designs of Metal oxide for Transparent Electronics

  • Kim, Joondong;Patel, Malkeshkumar;Kim, Hong-Sik;Kim, Hyunki;Yadav, Pankaj;Park, Wanghee;Ban, Dongkyun
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.387.1-387.1
    • /
    • 2016
  • Transparent materials are necessary for most photoelectric devices, which allow the light generation from electric energy or vice versa. Metal oxides are usual materials for transparent conductors to have high optical transmittance with good electrical properties. Functional designs may apply in various applications, including solar cells, photodetectors, and transparent heaters. Nanoscale structures are effective to drive the incident light into light-absorbing semiconductor layer to improve solar cell performances. Recently, the new metal oxide materials have inaugurated functional device applications. Nickel oxide (NiO) is the strong p-type metal oxide and has been applied for all transparent metal oxide photodetector by combining with n-type ZnO. The abrupt p-NiO/n-ZnO heterojunction device has a high transmittance of 90% for visible light but absorbs almost entire UV wavelength light to show the record fastest photoresponse time of 24 ms. For other applications, NiO has been applied for solar cells and transparent heaters to induce the enhanced performances due to its optical and electrical benefits. We discuss the high possibility of metal oxides for current and future transparent electronic applications.

  • PDF

Transparent Conductors for Photoelectric Devices

  • Kim, Joondong;Patel, Malkeshkumar;Kim, Hong-Sik;Yun, Ju-Hyung;Kim, Hyunki
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.87.2-87.2
    • /
    • 2015
  • Transparent conductors are commonly used in photoelectric devices, where the electric energy converts to light energy or vice versa. Energy consumption devices, such as LEDs, Displays, Lighting devices use the electrical energy to generate light by carrier recombination. Meanwhile, solar cell is the only device to generate electric energy from the incident photon. Most photoelectric devices require a transparent electrode to pass the light in or out from a device. Beyond the passive role, transparent conductors can be employed to form Schottky junction or heterojunction to establish a rectifying current flow. Transparent conductor-embedded heterojunction device provides significant advantages of transparent electrode formation, no need for intentional doping process, and enhanced light-reactive surface area. Herein, we present versatile applications of transparent conductors, such as NiO, ZnO, ITO in photoelectric devices of solar cells and photodetectors for high-performing UV or IR detection. Moreover, we also introduce the growth of transparent ITO nanowires by sputtering methods for large scale application.

  • PDF

Oxide TFT Structure Affecting the Device Performance

  • KoPark, Sang-Hee;Cho, Doo-Hee;Hwang, Chi-Sun;Ryu, Min-Ki;Yang, Shin-Hyuk;Byun, Chun-Won;Yoon, Sung-Min;Cheong, Woo-Seok;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • /
    • pp.385-388
    • /
    • 2009
  • We have investigated the effect of the device structure on the performance of polycrystalline ZnO TFT and amorphous AZTO TFT with top gate and bottom gate structure. While the mobility of both TFTs showed relatively similar value in a top and bottom gate structure, bias stability was quite different depending on the device structure. Top gate TFT showed much less Vth shift under positive bias stress compared to that of bottom gate TFT. We attributed this different behavior to the defects formation on the gate insulator induced by energetic bombardment during the active layer deposition in a bottom gate TFT. We suggest the top gate oxide TFT would show more stable behavior under the Vgs bias.

  • PDF

ITO Nanowires-embedded Transparent Metal-oxide Semiconductor Photoelectric Devices (ITO 나노와이어 기반의 투명 산화물 반도체 광전소자)

  • Kim, Hyunki;Kim, Hong-Sik;Patel, Malkeshkumar;Kim, Joondong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
    • /
    • v.28 no.12
    • /
    • pp.808-812
    • /
    • 2015
  • Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction of p-type NiO and n-type ZnO. A functional template of ITO nanowires (NWs) was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

Transparent Conductor-embedding Si for High-performing Hetrojunction Photoelectric Devices

  • Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.444.2-444.2
    • /
    • 2014
  • Transparent conductors (TCs) are typically applied as an ohmic contact layer for photoelectric devices. Recent researches have illuminated a unique rectifying-junction design between a transparent conductor and a semiconductor layer. This approach may lead a significant reduction of device-fabrication steps and cost. A high-performing heterojunction device is presented, which provided significant photoelectric responses. This covers the fabrication processes, rectifying-junction formations and device analyses.

  • PDF

Optically transparent and electrically conductive indium-tin-oxide nanowires for transparent photodetectors

  • Kim, Hyunki;Park, Wanghee;Ban, Dongkyun;Kim, Hong-Sik;Patel, Malkeshkumar;Yadav, Pankaj;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.390.2-390.2
    • /
    • 2016
  • Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

  • PDF

Ultrafast and flexible UV photodetector based on NiO

  • Kim, Hong-sik;Patel, Malkeshkumar;Kim, Hyunki;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.389.2-389.2
    • /
    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

  • PDF

Two dimensional tin sulfide for photoelectric device

  • Patel, Malkeshkumar;Kim, Joondong
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.389.1-389.1
    • /
    • 2016
  • The flexible solid state device has been widely studied as portable and wearable device applications such as display, sensor and curved circuits. A zero-bias operation without any external power consumption is a highly-demanding feature of semiconductor devices, including optical communication, environment monitoring and digital imaging applications. Moreover, the flexibility of device would give the degree of freedom of transparent electronics. Functional and transparent abrupt p/n junction device has been realized by combining of p-type NiO and n-type ZnO metal oxide semiconductors. The use of a plastic polyethylene terephthalate (PET) film substrate spontaneously allows the flexible feature of the devices. The functional design of p-NiO/n-ZnO metal oxide device provides a high rectifying ratio of 189 to ensure the quality junction quality. This all transparent metal oxide device can be operated without external power supply. The flexible p-NiO/n-ZnO device exhibit substantial photodetection performances of quick response time of $68{\mu}s$. We may suggest an efficient design scheme of flexible and functional metal oxide-based transparent electronics.

  • PDF

Hybrid Transparent Conductor by using Solution-Processed AgNWs for High-Performing Si Photodetectors

  • Kim, Hong-Sik;Kim, Joondong
    • Current Photovoltaic Research
    • /
    • v.3 no.4
    • /
    • pp.116-120
    • /
    • 2015
  • A hybrid transparent conducting layer was applied for Si photodetector. To realize the hybrid transparent conducting layer, a 200 nm-thick ITO layer was deposited onto a Si substrate, following by a solution-processed AgNWs-coating on the ITO. The hybrid transparent conducting layer showed an excellent low electric resistance of $15.9{\Box}/{\Omega}$ with a high optical transparency of 86.89%. Due to these optical and electrical benefits, the hybrid transparent conductor-embedding Si diode provides an extremely high rectifying ratio of 3386. Under light-illumination, the hybrid transparent conductor device provides extremely high photoresponses for broad wavelengths. This implies that a functional design for hybrid transparent conductor is crucial for photoelectric devices and applications.

Transparent Photovoltaic Device using Two-dimensional Transition-metal Dichalcogenides (이차원 반도체 소재를 이용한 투명 태양전지 특성에 관한 연구)

  • Jwa, Tae-Hun;Hyun, Chul-Min;Kim, Min-Sik;Lee, Hyeok-ju;Ahn, Ji-Hoon
    • Journal of the Korean institute of surface engineering
    • /
    • v.49 no.2
    • /
    • pp.186-190
    • /
    • 2016
  • In this study, we fabricated the transparent photovoltaic device using 2-dimensional transition-metal dichalcogenides and investigated the transparency and photovoltaic characteristics. P-n heterojunction was formed by mechanical exfoliation and aligned transfer method on the transparent sheet using n-type $MoS_2$ and p-type $WSe_2$. Our transparent photovoltaic device exhibited the open-circuit voltage of ~ 0.15 V and the short-circuit current of 0.48 nA under illumination of white light.