• Title, Summary, Keyword: VCSEL array

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Development of UV molding Process to Integrate Microlens Array on VCSEL Array for Optical Communication (광통신 용 VCSEL Array상에 Microlens Array를 집적하기 위한 UV성형 공정기술 개발)

  • 한정원;김석민;김홍민;이지승;임지석;강신일
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.840-843
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    • 2004
  • UV molding is a process for integrating micro/nano polymeric optical components on optoelectronic modules. In the present study, a microlens array for vertical cavity surface emitting laser(VCSEL) to fiber coupling was designed, integrated and tested. At the design stage, design variables ware optimized to maximize the coupling efficiency, and tolerance analysis was carried out. At the integration stage, the UV transparent mold was fabricated and the microlens array on VCSEL array was integrated by UV molding process. Finally the coupling efficiency of VCSEL to fiber was measured and analyzed.

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A 4-channel 3.125-Gb/s/ch VCSEL driver Array (4-채널 3.125-Gb/s/ch VCSEL 드라이버 어레이)

  • Hong, Chaerin;Park, Sung Min
    • Journal of the Institute of Electronics and Information Engineers
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    • v.54 no.1
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    • pp.33-38
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    • 2017
  • In this paper, a 4-channel common-cathode VCSEL diode driver array with 3.125 Gb/s per channel operation speed is realized. In order to achieve faster speed of the switching main driver with relatively large transistors, the transmitter array chip consists of a pre-amplifier with active inductor stage and also an input buffer with modified equalizer, which leads to bandwidth extension and reduced current consumption. The utilized VCSEL diode provides inherently 2.2 V forward bias voltage, $50{\Omega}$ resistance, and 850 fF capacitance. In addition, the main driver based upon current steering technique is designed, so that two individual current sources can provide bias currents of 3.0 mA and modulation currents of 3.3 mA to VCSEL diodes. The proposed 4-channel VCSEL driver array has been implemented by using a $0.11-{\mu}m$ CMOS technology, and the chip core occupies the area of $0.15{\times}0.18{\mu}m^2$ and dissipates 22.3 mW per channel.

A 4-Channel 6.25-Gb/s/ch VCSEL Driver for HDMI 2.0 Active Optical Cables

  • Hong, Chaerin;Park, Sung Min
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.17 no.4
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    • pp.561-567
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    • 2017
  • This paper presents a 4-channel common-cathode VCSEL driver array operating up to 6.25 Gb/s per channel for the applications of HDMI 2.0 active optical cables. The proposed VCSEL driver consists of an input buffer, a modified Cherry-Hooper amplifier as a pre-driver, and a main driver with pre-emphasis to drive a common-cathode VCSEL diode at high-speed full switching operations. Particularly, the input buffer merges a linear equalizer not only to broaden the bandwidth, but to reduce power consumption simultaneously. Measured results of the proposed 4-channel VCSEL driver array implemented in a $0.13-{\mu}m$ CMOS process demonstrate wide and clean eye-diagrams for up to 6.25-Gb/s operation speed with the bias current 2.0 mA and the modulation currents of $3.1mA_{PP}$. Chip core occupies the area of $0.15{\times}0.1{\mu}m^2$ and dissipate 22.8 mW per channel.

Thermal analysis of a VCSEL array with flip-chip bond design (플립칩 본딩 구조의 표면방출레이저 어레이에 대한 열 해석)

  • Kim, Seon-Hoon;Kim, Tae-Un;Kim, Sang-Taek;Ki, Hyun-Chul;Yang, Myung-Hak;Kim, Hyo-Jin;Ko, Hang-Ju;Kim, Hwe-Jong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.415-416
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    • 2008
  • The finite element model was used to simulate the temperature distribution of a arrayed vertical-cavity surface-emitting laser (VCSEL). In this work, the dimension of AlGaAs/GaAs based VCSEL array was $50{\mu}m$ active diameter and $250{\mu}m$ pitch, and AuSn solder of 80wt%Au-20wt%Sn was included to flip-chip bond. The results of the thermal simulation will be applied to predict the thermal cross-talk in high speed parallel optical interconnects.

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Design of Core Chip for 3.1Gb/s VCSEL Driver in 0.18㎛ CMOS (0.18㎛ CMOS 3.1Gb/s VCSEL Driver 코아 칩 설계)

  • Yang, Choong-Reol;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38A no.1
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    • pp.88-95
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    • 2013
  • We propose a novel driver circuit design using $0.18{\mu}m$ CMOS process technology that drives a 1550 nm high-speed VCSEL used in optical transceiver. We report a distinct improvement in bandwidth, voltage gain and eye diagram at 3.1Gb/s data rate in comparison with existing topology. In this paper, the design and layout of a 3.1Gb/s VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed.

MBE Growth and Fabrication of Oxide-Confined VCSEL Array (산화막 구경 표면발광 레이저 어레이의 MBE 성장과 제작)

  • 김진숙;장기수;김종민;배성주;이용탁
    • Proceedings of the Optical Society of Korea Conference
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    • pp.144-145
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    • 2003
  • VCSEL은 우수한 소자 특성과 표면 발광 구조가 갖는 여러 가지 장점들로 인하여 병렬 광연결과 근거리 광섬유 통신에서 이상적인 광원으로 인정받고 있다. 특히 산화막 구경을 갖는 VCSEL은 이득영역 근처에서 횡 방향으로 광학적, 전기적 제한을 가함으로써 낮은 문턱전류와 높은 전력변환 효율을 갖기 때문에 현재까지 많은 연구가 진행되어 왔다. 본 논문에서는 in-situ 광 반사법을 이용한 VCSEL의 MBE 성장과 1■10 산화막 구경 VCSEL 어레이의 제작공정, 그리고 발진특성에 대하여 논하고자 한다. (중략)

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Demonstration of Time- and Wavelength-Division Multiplexed Passive Optical Network Based on VCSEL Array

  • Mun, Sil-Gu;Lee, Eun-Gu;Lee, Jie Hyun;Park, Heuk;Kang, Sae-Kyoung;Lee, Han Hyub;Kim, Kwangok;Doo, Kyeong-Hwan;Lee, Hyunjae;Chung, Hwan Seok;Lee, Jong Hyun;Lee, Sangsoo;Lee, Jyung Chan
    • ETRI Journal
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    • v.38 no.1
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    • pp.9-17
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    • 2016
  • We demonstrate a time- and wavelength-division multiplexed passive optical network system employing a vertical-cavity surface-emitting laser array-based optical line terminal transceiver and a tunable bidirectional optical subassembly-based optical network terminal transceiver. A packet error-free operation is achieved after a 40 km single-mode fiber bidirectional transmission. We also discuss an arrayed waveguide grating, a photo detector array based on complementary metal-oxide-semiconductor photonics technologies, and low-cost key devices for deployment in access networks.

A High Speed CMOS Arrayed Optical Transmitter for WPON Applications (WPON 응용을 위한 고속 CMOS어레이 광트랜스미터)

  • Yang, Choong-Reol;Lee, Sang-Soo
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.38B no.6
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    • pp.427-434
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    • 2013
  • In this paper, the design and layout of a 2.5 Gbps arrayed VCSEL driver for optical transceiver having arrayed multi-channel of integrating module is confirmed. In this paper, a 4 channel 2.5 Gbps VCSEL (vertical cavity surface emitting laser) driver array with automatic optical power control is implemented using $0.18{\mu}m$ CMOS process technology that drives a $1550{\mu}m$ high speed VCSEL used in optical transceiver. To enhance the bandwidth of the optical transmitter, active feedback amplifier with negative capacitance compensation is exploited. We report a distinct improvement in bandwidth, voltage gain and operation stability at 2.5Gbps data rate in comparison with existing topology. The 4-CH chip consumes only 140 mW of DC power at a single 1.8V supply under the maximum modulation and bias currents, and occupies the die area of $850{\mu}m{\times}1,690{\mu}m$ excluding bonding pads.

Nano Aperture Microprobe Array produced by FIB process for Integrated Optical Recording Read

  • 임동수;오종근;김영주
    • 정보저장시스템학회:학술대회논문집
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    • pp.81-82
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    • 2005
  • 새로운 고 용량 광 저장 시스템 개발을 위하여 초 미세 개구를 가지는 마이크로 프로브 어레이시스템 완성을 목표로 연구를 진행하였다. 효율적인 초 미세 개구 생성을 위해 기존의 제작된 마이크로 프로브 위에 FIB 공정을 이용하여 40nm 크기를 가지는 어퍼쳐를 만들었다. 나노 어퍼쳐를 가지는 마이크로 프로브 어레이는 곧 마이크로 렌즈와 VCSEL 과 일체화된 광 기록 헤드시스템으로 준비될 예정이다. 멤스 공정을 이용한 이 시스템은 향후 높은 저장 용량과 빠른 전송속도를 달성할 수 있는 차세대 광정보저장기기에 적용 가능한 새로운 광 픽업 시스템을 발전시킬 수 있을 것으로 생각된다.

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A One-Kilobit PQR-CMOS Smart Pixel Array

  • Lim, Kwon-Seob;Kim, Jung-Yeon;Kim, Sang-Kyeom;Park, Byeong-Hoon;Kwon, O'Dae
    • ETRI Journal
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    • v.26 no.1
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    • pp.1-6
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    • 2004
  • The photonic quantum ring (PQR) laser is a three dimensional whispering gallery (WG) mode laser and has anomalous quantum wire properties, such as microampere to nanoampere range threshold currents and ${\sqrt{T}}$-dependent thermal red shifts. We observed uniform bottom emissions from a 1-kb smart pixel chip of a $32{\times}32$ InGaAs PQR laser array flip-chip bonded to a 0.35 ${\mu}m$ CMOS-based PQR laser driver. The PQR-CMOS smart pixel array, now operating at 30 MHz, will be improved to the GHz frequency range through device and circuit optimization.

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