• 제목, 요약, 키워드: Wire Bonding

검색결과 198건 처리시간 0.025초

고출력 트랜지스터 패키지 설계를 위한 새로운 와이어 본딩 방식 (A New Wire Bonding Technique for High Power Package Transistor)

  • 임종식;오성민;박천선;이용호;안달
    • 전기학회논문지
    • /
    • v.57 no.4
    • /
    • pp.653-659
    • /
    • 2008
  • This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

파워모듈의 TLP 접합 및 와이어 본딩 (TLP and Wire Bonding for Power Module)

  • 강혜준;정재필
    • 마이크로전자및패키징학회지
    • /
    • v.26 no.4
    • /
    • pp.7-13
    • /
    • 2019
  • Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

1-10 ㎓ 초고주파 패키지용 bonding wire 인덕턴스 특성 측정 (Inductance Characterization of Bonding Wires for 1-10㎓ Radio Frequency Packages)

  • 정태호;지용
    • 대한전자공학회:학술대회논문집
    • /
    • /
    • pp.221-224
    • /
    • 2001
  • In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

  • PDF

실장된 반도체 레이저의 본딩와이어를 고려한 광대역 변조 특성 해석 (Wideband modulation analysis of a packaged semiconductor laser in consideration of the bonding wire effect)

  • 윤상기;한영수;김상배;이해영
    • 전자공학회논문지A
    • /
    • v.33A no.2
    • /
    • pp.148-162
    • /
    • 1996
  • Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.

  • PDF

반응 표면 분석법을 이용한 Light Emitting Diode(LED) wire bonding 용 Ball Bonding 공정 최적화에 관한 연구 (Process Capability Optimization of Ball Bonding Using Response Surface Analysis in Light Emitting Diode(LED) Wire Bonding)

  • 김병찬;하석재;양지경;이인철;강동성;한봉석;한유진
    • 한국산학기술학회논문지
    • /
    • v.18 no.4
    • /
    • pp.175-182
    • /
    • 2017
  • 본 와이어 본딩은 발광 다이오드의 패키징 공정에서 매우 중요한 공정으로 금 와이어를 이용하여 발광 다이오드 칩과 리드 프레임을 연결함으로써 다음 공정에서의 전기적 작동을 가능하게 한다. 와이어 본딩 공정은 얇은 금속선을 연결하는 공정으로 열 압착 본딩(thermo compression bonding)과 초음파 본딩(ultra sonic bonding)이 있다. 일반적인 와이어 본딩 공정은 LED 칩 상부 전극 부위에 볼 모양의 본딩을 진행하는 1st ball bonding 공정, loop를 형성하여 다른 전원 연결부위로 wire를 늘어뜨리는 looping 공정, 다른 전극 부위 상부에 stitch를 형성하여 bonding 하는 2nd stitch bonding으로 구분된다. 본 논문에서는 발광 다이오드 다이 본딩 공정에 영향을 주는 다양한 공정 변수에 대하여 분석을 수행하였다. 그리고 반응 표면 분석법을 통하여 Zener 다이오드 칩과 PLCC 발광 다이오드 패키지 프레임을 연결하는 공정 최적화 결과를 도출하였다. 실험 계획법은 5인자, 3수준에 대하여 설정하였으며 4가지 반응에 대하여 인자를 분석하였다. 결과적으로 본 연구에서는 모든 목표에 맞는 최적 조건을 도출하였다.

고밀도 본딩와이어간의 혼신감소를 위한 차폐 본딩왕이어 및 광대역 해석 (Screening bonding wire and the wideband characterization to reduce crosstalk between high density bonding wires)

  • 이상동;이해영
    • 전자공학회논문지A
    • /
    • v.33A no.7
    • /
    • pp.92-98
    • /
    • 1996
  • parallel bonding wires separaated with a screeing bonding wire are proposed and characterized in order to redue mutual coupling and parasitics of high-speed and high-density device packaging. The mehtod of moments (MoM) with the incorporation of the ohmic loss has been used in a wide range of frequencies. From the calculated results, we have found that the screening bonding wire effectively reduces inductive and capacitive crostalk levels more than 3dB. the parasitic self inductance is also reduced more than 12% by the screening effect. Therefore, for a general VLSi package, the packaging density can be increased more than 30% using the screening bonding wire. This screeing bonding wire and the analysis can be effectively used to reduce crosstalk and increase packaging density of high density devices.

  • PDF

반도체 패키징용 Gold Bonding Wire의 변형특성 및 해석 (Deformation Properties of Gold Bonding Wire for VLSI Packaging Applications)

  • 김경섭;홍순형
    • 한국소성가공학회:학술대회논문집
    • /
    • /
    • pp.250-253
    • /
    • 2001
  • Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

  • PDF

와이어 본딩용 트랜스듀서 혼의 진동 특성 (Vibration Characteristics of a Wire-Bonding Transducer Horn)

  • 임빛;한대웅;이승엽;안근식;강경완;김국환
    • 한국소음진동공학회:학술대회논문집
    • /
    • /
    • pp.583-588
    • /
    • 2007
  • This paper investigates the vibration characteristics of a wire-bonding transducer horn for high speed welding devices. The sample wire-bonder uses the input frequency of 136 kHz. The ultrasonic excitation causes the various vibrations of transducer horn and capillary. The vibration modes and frequencies close to the exciting frequency are identified using ANSYS. The nodal lines and amplification ratio of the ultrasonic horn are also obtained in order to evaluate the bonding performance of the sample wire-bonder system. The FEM results and experimental results show that the sample wire-bonder system uses the bending mode of 136 kHz as principal motion for bonding. The major longitudinal mode exists at 119 kHz below the excitation frequency. It is recommeded that the sample system is to set the excitation frequency at 119 kHz to improve bonding performance.

  • PDF

Development of smart transducer with embedded sensor for automatic process control of ultrasonic wire bonding

  • Or, Siu Wing;Chan, Helen Lai Wa;Liu, Peter Chou Kee
    • Smart Structures and Systems
    • /
    • v.1 no.1
    • /
    • pp.47-61
    • /
    • 2005
  • A ring-shaped lead zirconate titanate (PZT) piezoceramic sensor has been integrated with the Langevin-type piezoceramic driver of an ultrasonic wire-bonding transducer to form a smart transducer for in-situ measurement of three essential bonding parameters: namely, impact force, ultrasonic amplitude and bond time. This sensor has an inner diameter, an outer diameter and a thickness of 12.7 mm, 5.1 mm and 0.6 mm, respectively. It has a specifically designed electrode pattern on the two major surfaces perpendicular to its thickness along which polarization is induced. The process-test results have indicated that the sensor not only is sensitive to excessive impact forces exerted on the devices to be bonded but also can track changes in the ultrasonic amplitude proficiently during bonding. Good correlation between the sensor outputs and the bond quality has been established. This smart transducer has good potential to be used in automatic process-control systems for ultrasonic wire bonding.

Wire-bonding의 길이 변화에 따른 주파수별 특성 분석 (Analysis of Frequency Response Depending on Wire-bonding Length Variation)

  • 권은진;문종원;류종인;박세훈;김준철
    • 대한전자공학회:학술대회논문집
    • /
    • /
    • pp.551-552
    • /
    • 2008
  • This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

  • PDF