• Title, Summary, Keyword: Wire Bonding

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A New Wire Bonding Technique for High Power Package Transistor (고출력 트랜지스터 패키지 설계를 위한 새로운 와이어 본딩 방식)

  • Lim, Jong-Sik;Oh, Seong-Min;Park, Chun-Seon;Lee, Yong-Ho;Ahn, Dal
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.4
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    • pp.653-659
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    • 2008
  • This paper describes the design of high power transistor packages using high power chip transistor dies, chip capacitors and a new wire bonding technique. Input impedance variation and output power performances according to wire inductance and resistance for internal matching are also discussed. A multi crossing type(MCT) wire bonding technique is proposed to replace the conventional stepping stone type(SST) wire bonding technique, and eventually to improve the output power performances of high power transistor packages. Using the proposed MCT wire bonding technique, it is possible to design high power transistor packages with highly improved output power compared to SST even the package size is kept to be the same.

TLP and Wire Bonding for Power Module (파워모듈의 TLP 접합 및 와이어 본딩)

  • Kang, Hyejun;Jung, Jaepil
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.7-13
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    • 2019
  • Power module is getting attention from electronic industries such as solar cell, battery and electric vehicles. Transient liquid phase (TLP) boding, sintering with Ag and Cu powders and wire bonding are applied to power module packaging. Sintering is a popular process but it has some disadvantages such as high cost, complex procedures and long bonding time. Meanwhile, TLP bonding has lower bonding temperature, cost effectiveness and less porosity. However, it also needs to improve ductility of the intermetallic compounds (IMCs) at the joint. Wire boding is also an important interconnection process between semiconductor chip and metal lead for direct bonded copper (DBC). In this study, TLP bonding using Sn-based solders and wire bonding process for power electronics packaging are described.

Inductance Characterization of Bonding Wires for 1-10㎓ Radio Frequency Packages (1-10 ㎓ 초고주파 패키지용 bonding wire 인덕턴스 특성 측정)

  • Jung, Tae-Ho;Jee, Yong
    • Proceedings of the IEEK Conference
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    • pp.221-224
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    • 2001
  • In this paper, the bonding wire interconnection has been studied from the points of view of modeling and electrical characterization. The bonding wire is measured by TDR(Time Domain Reflectometry) and Network analyzer(1-10㎓). First, one gold bonding wire mounted on 2mm gap substrate measured 3.68nH by TDR and 3.39nH by Network analyzer(6㎓). Two gold bonding wire mounted on 2mm gap substrate measured 3.14nH by TDR and 2.80nH by Network analyzer. This result presented that inductance of bonding wire could be employed as inductors for radio frequency circuit packaging.

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Wideband modulation analysis of a packaged semiconductor laser in consideration of the bonding wire effect (실장된 반도체 레이저의 본딩와이어를 고려한 광대역 변조 특성 해석)

  • 윤상기;한영수;김상배;이해영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.2
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    • pp.148-162
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    • 1996
  • Bonding wires for high frequency device packaging have dominant parasitic inductances which limit the performance of semiconductor lasers. In this paper, the inductance sof bonding wires are claculated by the method of moments with incorporation of ohmic loss, and the wideband modulation characteristics are analyzed for ddifferent wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire lengths and structures. We observed the modulation bandwidth for 1mm-length bonding wire is 7 GHz wider than that for 2mm-length bonding wire. We also observed th estatic inductance calculation results in dispersive deviation of the parasitic inductance and the modulation characteristics from the wideband moment methods calculations. The angled bonding wire has much less parasitic inductance and improves the modulation bandwidth more than 6 GHz. This calculation resutls an be widely used for designing and packaging of high-speed semiconductor device.

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Process Capability Optimization of Ball Bonding Using Response Surface Analysis in Light Emitting Diode(LED) Wire Bonding (반응 표면 분석법을 이용한 Light Emitting Diode(LED) wire bonding 용 Ball Bonding 공정 최적화에 관한 연구)

  • Kim, Byung-Chan;Ha, Seok-Jae;Yang, Ji-Kyung;Lee, In-Cheol;Kang, Dong-Seong;Han, Bong-Seok;Han, Yu-Jin
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.18 no.4
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    • pp.175-182
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    • 2017
  • In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.

Screening bonding wire and the wideband characterization to reduce crosstalk between high density bonding wires (고밀도 본딩와이어간의 혼신감소를 위한 차폐 본딩왕이어 및 광대역 해석)

  • 이상동;이해영
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.92-98
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    • 1996
  • parallel bonding wires separaated with a screeing bonding wire are proposed and characterized in order to redue mutual coupling and parasitics of high-speed and high-density device packaging. The mehtod of moments (MoM) with the incorporation of the ohmic loss has been used in a wide range of frequencies. From the calculated results, we have found that the screening bonding wire effectively reduces inductive and capacitive crostalk levels more than 3dB. the parasitic self inductance is also reduced more than 12% by the screening effect. Therefore, for a general VLSi package, the packaging density can be increased more than 30% using the screening bonding wire. This screeing bonding wire and the analysis can be effectively used to reduce crosstalk and increase packaging density of high density devices.

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Deformation Properties of Gold Bonding Wire for VLSI Packaging Applications (반도체 패키징용 Gold Bonding Wire의 변형특성 및 해석)

  • Kim K.;Hong S. H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • pp.250-253
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    • 2001
  • Mechanical properties of gold bonding wire for VLSI packaging have been studied. The diameters of gold wires are about 20-30 micrometer and fracture loads are 8-20 gram force. The elastic modulus, yield strength, fracture strength and elongation properties have been evaluated by micro-tensile test method. This work discusses for an appropriate selection of micro-force testing system and grip design in mim testing. The best method to determine gauge length of wire and to measure tensile properties has been proposed. The mechanical properties such as strength and elastic modulus of current gold bonding wire are higher than pure those of gold wire.

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Vibration Characteristics of a Wire-Bonding Transducer Horn (와이어 본딩용 트랜스듀서 혼의 진동 특성)

  • Yim, Vit;Han, Dae-Ung;Lee, Seung-Yeop;An, Geun-Sik;Gang, Gyeong-Wan;Kim, Guk-Hwan
    • Proceedings of the Korean Society for Noise and Vibration Engineering Conference
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    • pp.583-588
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    • 2007
  • This paper investigates the vibration characteristics of a wire-bonding transducer horn for high speed welding devices. The sample wire-bonder uses the input frequency of 136 kHz. The ultrasonic excitation causes the various vibrations of transducer horn and capillary. The vibration modes and frequencies close to the exciting frequency are identified using ANSYS. The nodal lines and amplification ratio of the ultrasonic horn are also obtained in order to evaluate the bonding performance of the sample wire-bonder system. The FEM results and experimental results show that the sample wire-bonder system uses the bending mode of 136 kHz as principal motion for bonding. The major longitudinal mode exists at 119 kHz below the excitation frequency. It is recommeded that the sample system is to set the excitation frequency at 119 kHz to improve bonding performance.

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Development of smart transducer with embedded sensor for automatic process control of ultrasonic wire bonding

  • Or, Siu Wing;Chan, Helen Lai Wa;Liu, Peter Chou Kee
    • Smart Structures and Systems
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    • v.1 no.1
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    • pp.47-61
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    • 2005
  • A ring-shaped lead zirconate titanate (PZT) piezoceramic sensor has been integrated with the Langevin-type piezoceramic driver of an ultrasonic wire-bonding transducer to form a smart transducer for in-situ measurement of three essential bonding parameters: namely, impact force, ultrasonic amplitude and bond time. This sensor has an inner diameter, an outer diameter and a thickness of 12.7 mm, 5.1 mm and 0.6 mm, respectively. It has a specifically designed electrode pattern on the two major surfaces perpendicular to its thickness along which polarization is induced. The process-test results have indicated that the sensor not only is sensitive to excessive impact forces exerted on the devices to be bonded but also can track changes in the ultrasonic amplitude proficiently during bonding. Good correlation between the sensor outputs and the bond quality has been established. This smart transducer has good potential to be used in automatic process-control systems for ultrasonic wire bonding.

Analysis of Frequency Response Depending on Wire-bonding Length Variation (Wire-bonding의 길이 변화에 따른 주파수별 특성 분석)

  • Gwon, Eun-Jin;Mun, Jong-Won;Ryu, Jong-In;Park, Se-Hoon;Kim, Jun-Chul
    • Proceedings of the IEEK Conference
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    • pp.551-552
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    • 2008
  • This paper presets a results of frequency response in variation of wire bonding length. A gold ball bonding is used as a wire bonding process, and a DPDT(double pole double thru) switch is adapted as a device for test. Wire length is ranged from 442um to 833um and a measured frequency range is from 1 GHz to 6 GHz. Little difference are measured in insertion loss and return loss depending on wire length. Measured S21 and S11 are -0.58 dB and -17.7 dB, respectively. S21 insertion loss is rising up and S11 insertion loss is falling down as the frequency is increased.

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