• Title, Summary, Keyword: Wire Bonding

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Surface bonding pad design for universal wire bonding(Au ball bonding + Al wedge bonding) (Universal wire bonding(Au ball bonding + Al wedge bonding)을 위한 표층 전극 구조 설계)

  • Sung, Je-Hong;Kim, Jin-Wuan;Choi, Yun-Huek
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.171-171
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    • 2008
  • 본 연구는 초음파 알루미늄 웨지 및 금 볼 본딩을 동시에 적용 가능한 본딩 Pad의 금속학적 안정성을 고려한 표층전극 형성 방법에 관한 것이다. 특히, 이동통신 및 전장용 모듈의 복합 및 융합화로 LTCC기판 패키징에 있어서 다양한 본딩 기술이 요구되고 있다. 전통적인 interconnection 기술인 Au ball 본딩 및 초음파 에너지를 이용한 Al wedge 본딩 기술이 동시에 사용되어야 하는 패키지 구조의 경우 본딩 패드의 표층전극 설계는 서로 상충되는 조건이 요구된다. 따라서, 본 연구에서는 LTCC기판의 표층전극의 Metal finish 방법으로 이용되는 ENEPIG(무전해 Ni/Pd/Au도금)공법으로 Au ball 본딩 및 초음파 Al wedge 본딩을 동시에 가능하게 하는 solution을 제시하여 패키징 자유도뿐만 아니라 Interconnection 신뢰성을 확보할 수 있었다.

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3D Accuracy Enhancement of BGA Shiny Round Ball Using Optical Triangulation Method (광삼각법을 이용한 고반사 BGA 볼의 정밀 높이 측정 방법)

  • Joo, Byeong Gwon;Cho, Taik Dong
    • Journal of the Korean Society for Precision Engineering
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    • v.32 no.9
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    • pp.799-805
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    • 2015
  • The further development of information, communication and digital media technologies requires the use of advanced, miniaturized semiconductor chips that operate at a high frequency. Die bonding and wire bonding methods for semiconductor packaging have been replaced by direct attachment to the substrate after forming a bump on the chip. However, the height of the bump or ball is an important factor for defects during assembly. This paper proposes an algorithm to measure the height of the bumps or balls in semiconductor packaging with greater accuracy. The performance of the proposed algorithm is experimentally validated. Non-contact 3D measurements of a shiny round ball is quite difficult, and it is not easy to obtain accurate data. This paper thus proposes an optical method and technique to improve the measurement accuracy.

Surface Analysis of Aluminum Bonding Pads in Flash Memory Multichip Packaging

  • Son, Dong Ju;Hong, Sang Jeen
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.4
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    • pp.221-225
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    • 2014
  • Although gold wire bonding techniques have already matured in semiconductor manufacturing, weakly bonded wires in semiconductor chip assembly can jeopardize the reliability of the final product. In this paper, weakly bonded or failed aluminum bonding pads are analyzed using X-ray photoelectron spectroscopy (XPS), Auger electron Spectroscopy (AES), and energy dispersive X-ray analysis (EDX) to investigate potential contaminants on the bond pad. We found the source of contaminants is related to the dry etching process in the previous manufacturing step, and fluorocarbon plasma etching of a passivation layer showed meaningful evidence of the formation of fluorinated by-products of $AlF_x$ on the bond pads. Surface analysis of the contaminated aluminum layer revealed the presence of fluorinated compounds $AlOF_x$, $Al(OF)_x$, $Al(OH)_x$, and $CF_x$.

Contact Detection Algorithm of the Z-axis of a Wire Bonder (와이어 본더 시스템의 Z축 표면 접촉 검출 알고리듬 개발)

  • Kim Jung-Han
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.7
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    • pp.137-145
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    • 2005
  • A new design of contact detection algorithm is proposed for the z-axis of a wire bonder that interconnects between pads and leads in semiconductor manufacturing processes. Fast and stable contact detection of the z-axis is extremely important fer maintaining proper quality in the fine pitch gold wire bonding process, which has a small pad size of below 70um. The new method is based on a statistical approach and designed for the discrete Kalman filter. Real wire bonding experimental results are presented to demonstrate the advantages of the proposed algorithm.

The Design of Zoom Microscope System for Inspecting Wire-Bonding (와이어 본딩 검사용 현미경 광학계의 설계)

  • 류재명;임천석;조재흥;정진호;전영세
    • Proceedings of the Optical Society of Korea Conference
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    • pp.256-257
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    • 2003
  • 반도체 와이어 본딩(wire-bonding) 조립공정에 사용되는 검사용 현미경 광학계를 설계하였다. 이러한 와이어는 리드프레임에 대해 $\pm$ 1 mm의 단차를 가진다. 이 때 리드프레임은 6배로 관찰하며, 와이어 부분은 2배로 관찰하고자 한다. 그러나 와이어의 단차로 인해 물체거리가 변하게 되며, 일반 광학계로는 배율도 변하게 된다. 물체거리가 변해도 동일한 배율을 가지는 광학계를 설계하기 위해 유한 물점용 3군 줌 광학계를 목적에 맞게 변형시켰다. (중략)

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Direct and indirect bonding of wire retainers to bovine enamel using three resin systems: shear bond strength comparisons (부착 유지장치의 직, 간접 부착법에 따른 전단 접착력 비교)

  • Kwon, Tae-Yub;Meina, Hu;Antoszewska, Joana;Park, Hyo-Sang
    • The korean journal of orthodontics
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    • v.41 no.6
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    • pp.447-453
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    • 2011
  • Objective: We compared the shear bond strength (SBS) of lingual retainers bonded to bovine enamel with three different resins using direct and indirect methods. Methods: Both ends of pre-fabricated twisted ligature wires were bonded to bovine enamel surfaces using Light-Core, Tetric N-Flow, or Transbond XT. Phosphoric acid-etched enamel surfaces were primed with One-Step prior to bonding with Light-Core or Tetric N-Flow. Transbond XT primer was used prior to bonding with Transbond XT. After 24 hours in water at $37^{\circ}C$, we performed SBS tests on the samples. We also assigned adhesive remnant index (ARI) scores after debonding and predicted the clinical performance of materials and bonding techniques from Weibull analyses. Results: Direct bonding produced significantly higher SBS values than indirect bonding for all materials. The SBS for Light-Core was significantly higher than that for Tetric N-Flow, and there was no significant difference between the direct bonding SBS of Transbond XT and that of Light-Core. Weibull analysis indicated Light-Core performed better than other indirectly bonded resins. Conclusions: When the SBS of a wire retainer is of primary concern, direct bonding methods are superior to indirect bonding methods. Light-Core may perform better than Transbond XT or Tetric N-Flow when bonded indirectly.

교정용 브라켓의 간접 접착법

  • Cha, Bong-Geun
    • The journal of the Korean dental association
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    • v.37 no.7
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    • pp.530-535
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    • 1999
  • Detailed finishing of the occlusion is a clinical skill that has become difficult with the development of fixed appliances. Accuracy of bracket placement definitely improves with indirect technique, Several methods for the placement of orthodontic brackets on dental casts are currently used in the indirect bonding technique. These include attachment by means of bonding resins, adhesive tapes or sticky wax. This article presents the indirect procedures of our clinic, which use paste-paste chemically cured composites. Detailed laboratory and clinical procedure for dual tray method and other application of indirect bonding will be presented.

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Determination of Trace Elements of Ge and P in a Gold Bonding Wire by Inductively Coupled Plasma Atomic Emission Spectrometry

  • Choi, Sung-Min;Lee, Gae-Ho;Han, Jae-Kil
    • Bulletin of the Korean Chemical Society
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    • v.29 no.2
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    • pp.393-397
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    • 2008
  • Inductively coupled plasma atomic emission spectrometry (ICP-AES) was used to determine the presence of germanium and phosphorus in a pure gold bonding wire. The samples were dissolved with hydrobromic acid and nitric acid at room temperature. The quantitation limits were 0.012 mg L-1 at 265.118 nm for Ge and 0.009 mg L-1 at 177.495 nm for P. Using the mixed acid digestion formula of DIW+HBr+HNO3, the recoveries were in the range of 98-100% and the relative standard deviation was within 1.1-2.3%. On the other hand, the amount of Ge decreased by about 16.2% using DIW+HCl+HNO3, due to the formation of a volatile compound. The Ge contents determined using the external method and the standard addition method were 9.45 mg kg-1 and 9.24 mg kg-1, respectively, and the P contents, using the same methods, were 22.49 mg kg-1 and 23.09 mg kg-1, respectively. Both methods were successfully used to determine the trace amounts of P and Ge in the pure gold bonding wire samples.

Optimization of wiring process in semiconductor with 6sigma & QFD (6시그마와 QFD를 활용한 반도체용 wire공법 최적화 연구)

  • Kim, Chang-Hee;Kim, Kwang-Soo
    • Asia-Pacific Journal of Business Venturing and Entrepreneurship
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    • v.7 no.3
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    • pp.17-25
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    • 2012
  • Wire bonding process in making semiconductor needs the most precise control and Critical To Quality(CTQ). Thus, it is regarded to be the most essential step in packaging process. In this process, pure gold wire is used to connect the chip and PCB(substrate or lead frame). However, the price of gold has been skyrocketing continuously for a long period of time and is expected to further increase in the near future. This phenomenon situates us in an unfavorable condition amidst the competitive environment. To avoid this situation, many semiconductor material making companies developed new types of wires: Au.Ag wire is one material followed by many others. This study is aimed to optimize the parameter in wire bonding with the use of 6sigma and QFD(Quality Function Deployment). 6sigma process is a good means to not only solve the problem, but to increase productivity. In order to find the key factor, we focused on VOB(Voice of Business) and VOC(Voice of Customer). The main factors from VOB, VOC are called CTQ. However, there were times when these main factors were far from offering us the correct answer, thus making the situation more difficult to handle. This study shows that QFD aids in deciding which of the accurate factors to undertake. Normally QFD is used in designing and developing products. 6sigma process is held more effective when it used with QFD.

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Heat Dissipation Analysis of 12kV Diode by the Packaging Structure (12kV급 다이오드의 패키징 구조에 따른 방열 특성 연구)

  • Kim, Nam-Kyun;Kim, Sang-Cheol;Bahng, Wook;Song, Geun-Ho;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.1092-1095
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    • 2001
  • Steady state thermal analysis has been done by a finite element method in a diode of 12kV blocking voltage. The diode was fabricated by soldering ten pieces of 1200V diodes in series, capping a dummy wafer at the far end of diode series, and finally wire bonded for building anode and cathode terminal. In order to achieve high voltage and reliability, the edge of each diode was beveled and passivated by resin with a thickness of 25${\mu}$m. It was assumed that the generated heat which is mainly by the on-state voltage drop, 9V for 12kV diode, is dissipated by way of the conduction through diodes layers to bonding wire and of the convection at the surface of passivating resin. It was predicted by the thermal analysis that the temperature rise of a pn junction of the 12kV diode can reach at the range of 16∼34$^{\circ}C$ under the given boundary conditions. The thickness and thermal conductivity(0.3∼3W/m-K) of the passivating resin did little effect to lower thermal resistance of the diode. As the length of the bonding wire increased, which means the distance of heat conduction path became longer, the thermal resistance increased considerably. The thermal analysis results imply that the generated heat of the diode is dissipated mainly by the conduction through the route of diode-dummy wafer-bonding wire, which suggests to minimize the length of the wire for the lowest thermal resistance.

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