• Title, Summary, Keyword: X-Ray Mapping

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Quantitative Coherent X-ray Diffraction Imaging of Multiple Nano Particles

  • Kim, Yoonhee;Kim, Junhyeong;Ahn, Kang Woo;Noh, Do Young;Kim, Chan;Kang, Hyon Chol;Lee, Hae Cheol;Yu, Chung-Jong
    • Journal of the Korean Physical Society
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    • v.70 no.9
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    • pp.849-855
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    • 2017
  • We report a quantitative full field electron density mapping of nano-scale objects by coherent x-ray diffractive imaging (CXDI). The projected electron density maps of two specimens, a single AuNi nanocrystal and a cluster of multi Au nanocrystals, were successfully reconstructed using CXDI. It was found that the accuracy of the electron density mapping was higher for the multiple Au nanocrystal specimen than the single AuNi particle. The improvement was attributed to the interference between the x-rays diffracted by each particle, which makes the diffraction profile complex and enhances the uniqueness of image reconstruction. The findings of this research will be useful for the quantitative analysis nano and bio systems using CXDI.

Preparation of Epitaxial $LaSrCoO_3/SrTiO_3(100)$ Structures by The Chemical Solution Process (화학적 용액법에 의한 에피탁샬 $LaSrCoO_3/SrTiO_3(100)$ 구조의 제조)

  • 이형민;황규석;송종은;류현욱;강보안;윤연흠;김병훈
    • Journal of the Korean Ceramic Society
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    • v.36 no.10
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    • pp.1075-1079
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    • 1999
  • LaSrCoO3 thin films were spin-coated onto the SrTiO3(100) substrates by the chemical solution process. X-ray diffraction $\theta$-2$\theta$ scans and X-ray diffraction $\beta$ scans were used to determine the crystallinity and in -plane alignment behavior of the films. The X-ray diffraction pattern showed the film obtained by annealing at 80$0^{\circ}C$ was highly oriented. The X-ray diffraction pole-figure analysis and reciprocal-space mapping (2$\theta$-$\Delta$$\omega$ scans) of the resulting film showed that the film comprising the pseduocubic phase had an epitaxial relationship with the SriO3 substrate.

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Development of articulatory estimation model using deep neural network (심층신경망을 이용한 조음 예측 모형 개발)

  • You, Heejo;Yang, Hyungwon;Kang, Jaekoo;Cho, Youngsun;Hwang, Sung Hah;Hong, Yeonjung;Cho, Yejin;Kim, Seohyun;Nam, Hosung
    • Phonetics and Speech Sciences
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    • v.8 no.3
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    • pp.31-38
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    • 2016
  • Speech inversion (acoustic-to-articulatory mapping) is not a trivial problem, despite the importance, due to the highly non-linear and non-unique nature. This study aimed to investigate the performance of Deep Neural Network (DNN) compared to that of traditional Artificial Neural Network (ANN) to address the problem. The Wisconsin X-ray Microbeam Database was employed and the acoustic signal and articulatory pellet information were the input and output in the models. Results showed that the performance of ANN deteriorated as the number of hidden layers increased. In contrast, DNN showed lower and more stable RMS even up to 10 deep hidden layers, suggesting that DNN is capable of learning acoustic-articulatory inversion mapping more efficiently than ANN.

The effects of image acquisition control of digital X-ray system on radiodensity quantification

  • Seong, Wook-Jin;Kim, Hyeon-Cheol;Jeong, Soocheol;Heo, Youngcheul;Song, Woo-Bin;Ahmad, Mansur
    • Restorative Dentistry and Endodontics
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    • v.38 no.3
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    • pp.146-153
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    • 2013
  • Objectives: Aluminum step wedge (ASW) equivalent radiodensity (eRD) has been used to quantify restorative material's radiodensity. The aim of this study was to evaluate the effects of image acquisition control (IAC) of a digital X-ray system on the radiodensity quantification under different exposure time settings. Materials and Methods: Three 1-mm thick restorative material samples with various opacities were prepared. Samples were radiographed alongside an ASW using one of three digital radiographic modes (linear mapping (L), nonlinear mapping (N), and nonlinear mapping and automatic exposure control activated (E)) under 3 exposure time settings (underexposure, normal-exposure, and overexposure). The ASW eRD of restorative materials, attenuation coefficients and contrasts of ASW, and the correlation coefficient of linear relationship between logarithms of gray-scale value and thicknesses of ASW were compared under 9 conditions. Results: The ASW eRD measurements of restorative materials by three digital radiographic modes were statistically different (p = 0.049) but clinically similar. The relationship between logarithms of background corrected grey scale value and thickness of ASW was highly linear but attenuation coefficients and contrasts varied significantly among 3 radiographic modes. Varying exposure times did not affect ASW eRD significantly. Conclusions: Even though different digital radiographic modes induced large variation on attenuation of coefficient and contrast of ASW, E mode improved diagnostic quality of the image significantly under the underexposure condition by improving contrasts, while maintaining ASW eRDs of restorative materials similar. Under the condition of this study, underexposure time may be acceptable clinically with digital X-ray system using automatic gain control that reduces radiation exposure for patient.

Performance Analysis of Automatic Thickness Image using Convolution Function (컨벌루션 함수를 이용한 자동두께측정 영상의 성능분석)

  • Kang, Min-Goo;Zo, Moon-shin
    • Journal of Internet Computing and Services
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    • v.11 no.1
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    • pp.21-26
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    • 2010
  • In this paper, film uniformity is improved by the bolt-mapping of convolutional image processing between bolts and a film using soft X-ray based in-line LCD TV film thickness controls. The automatic film thickness analysis of 3 inter-bolt's convolution function is proposed for the reduction of offset error from the X-ray changing of line scan in film profiles.

Effect of Mg Additive in the Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06O10+δ(110 K phase) Superconductors (Bi1.84Pb0.34Sr1.91Ca2.03Cu3.06O10+δ(110 K 상)산화물 고온초전도체에 Mg 첨가에 따른 영향)

  • 이민수
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.16 no.6
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    • pp.522-531
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    • 2003
  • Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+{\delta}}$ high- $T_{c}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with MgO of 5~30 wt% each were sintered at 820~86$0^{\circ}C$ for 24 hours. The structural characteristics, critical temperature, grain size and image of mapping with respect to MgO contents were analyzed by XRD(X-Ray Diffraction), SEM(Scanning Electron Microscope) and EDS(Energy dispersive X-ray spectrometer) respectively. As MgO contents increased, intensity of MgO Peaks and ratio of Bi-2212 phase in superconductors intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.

Observation of Fracture Strengths According to the Core Materials for All Ceramic Bridge (전부도재교의치의 코어재료에 따른 파절강도 관찰)

  • Chung, In-Sung;Kim, Chi-Young
    • The Journal of Korean Academy of Dental Technology
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    • v.32 no.4
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    • pp.351-356
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    • 2010
  • Purpose: The purpose of this study was to evaluate the fracture strength between the core and veneering ceramic according to 2 core materials, In-Ceram Alumina and In-Ceram Zirconia, fabricated by electro ceramic layering technique. 2 different fixed partial denture cores of three units were veneered by veneering ceramic(Ceranion, Noritake) (n=10). Methods: The fracture strengths between the core and veneering ceramic were measured through the 3 point bending test. The interfaces between the core and veneering ceramic were observed with the X-ray dot mapping of EPMA. Results: The result of fracture strength was observed that IZP group, In-Ceram Zirconia core, had higher fracture strength. IPA group, In-Ceram Alumina core, had fracture strength of 359.9(${\pm}$86.2) N. IZP group, In-Ceram Zirconia core, had fracture strength of 823.2(${\pm}$243.0) N. X-ray dot mapping observation showed that a major element in the core and veneering ceramic of IPA group was alumina and silica, respectively. No binder was observed in interfaces between the core and veneering ceramic, and no ion diffusion or transition was observed between the core and veneering ceramic. However, apparent ion diffusion or transition was observed between the core and veneering ceramic of IZP group.

Dislocation Density Estimation and mosaic Model for GaN/SiC(0001) by High Resolution x-ray Diffraction

  • Yang, Quankui;Li, Aizhen
    • Journal of the Korean Vacuum Society
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    • v.6 no.S1
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    • pp.43-46
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    • 1997
  • High resolution x-ray diffraction and two dimensional triple axis mapping were used to characterize a group of GaN layers of about 1.1$\mu$m grown by direct current plasma molecular beam epitaxy technique on 6H-SiC(0001). A FWHM of 11.9 arcmins for an $\omega$ scan and 1.2 arcmins for an $\omega$/2$\theta$ scan were observed. A careful study of the rocking curves showed there were some large mosaics in the GaN layer and a tilt of $0.029^{\circ}$ between the GaN layer and the SIC substrate was detected. The two dimensional triple axis mapping showed that the GaN mosaica were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaics were disoriented in the (0001) plane but rather uniformed in direction perpendicular to the plane. A mosaic model was deduced to explain the phenomenon and the dislocation density was estimated to be about~$10^9\;\textrm{cm}^{-2}$ acc ding to the model.

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Property of molecular beam epitaxy-grown ZnSe/GaAs (분자선 에피성장법으로 성장된 ZnSe/GaAs의 특성)

  • Kim, Eun-Do;Son, Young-Ho;Cho, Seong-Jin;Hwang, Do-Weon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.17 no.2
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    • pp.52-56
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    • 2007
  • We have installed an ultra high vacuum (UHV) molecular beam epitaxy (MBE) system and investigated into the characteristics of MBE-grown ZnSe/GaAs [001] using scanning electron microscopy (SEM), atomic force microscopy (AFM), we confirmed that layer's surface was dense and uniform of molecular layer. We used x-ray diffractometer (XRD) and confirmed two peaks correspond to GaAs [001] substrate and ZnSe epilayer, respectively. We observed photoluminescence (PL) peak approximately at 437 nm and measured PL mapping of 2 inch ZnSe epilayer.