• Title, Summary, Keyword: electron beam lithography

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Design and Performance Test of Vacuum Control Valve for Electron Beam Lithography (전자빔 가공기의 진공제어 밸브설계 및 특성평가)

  • Lee Chan-Hong;Lee Hu-Sang
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.777-780
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    • 2005
  • The high vacuum in a electron beam lithography is basic condition, because electron beam vanish by collision with air molecules in generally atmosphere. To make high vacuum state, the vacuum control valve is essential. Most vacuum control valve are manual units. So, user of manual vacuum valve must have understanding vacuum process to change from low vacuum to high vacuum state. The user of electron beam lithography are troubled with operation of manual vacuum valve, in case the vacuum chamber is frequently open. In this paper, the design and performance test of auto vacuum control valve for electron beam lithography are described. With the auto vacuum control valve, the high vacuum level can reach 2.8E-5 Torr.

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Modeling and Simulation of Electron-beam Lithography Process for Nano-pattern Designs using ZEP520 Photoresist (ZEP520 포토리지스트를 이용한 나노 패턴 형성을 위한 전자빔 리소그래피 공정 모델링 및 시뮬레이션)

  • Son, Myung-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.25-33
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    • 2007
  • A computationally efficient and accurate Monte Carlo (MC) simulator of electron beam lithography process, which is named SCNU-EBL, has been developed for semiconductor nanometer pattern design and fabrication. The simulator is composed of a MC simulation model of electron trajectory into solid targets, an Gaussian-beam exposure simulation model, and a development simulation model of photoresist using a string model. Especially for the trajectories of incident electrons into the solid targets, the inner-shell electron scattering of an target atom and its discrete energy loss with an incident electron is efficiently modeled for multi-layer resists and heterogeneous multi-layer targets. The simulator was newly applied to the development profile simulation of ZEP520 positive photoresist for NGL(Next-Generation Lithography). The simulation of ZEP520 for electron-beam nanolithography gave a reasonable agreement with the SEM experiments of ZEP520 photoresist.

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Effect of the Off-axis distance of the Electron Emitting Source in Micro-column (마이크로 칼럼의 전자 방출원 위치 오차의 영향)

  • Lee, Eung-Ki
    • Journal of the Semiconductor & Display Technology
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    • v.9 no.1
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    • pp.17-21
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    • 2010
  • Currently miniaturized electron-optical columns find their way into electron beam lithography systems. For better lithography process, it is required to make smaller spot size and longer working distance. But, the micro-columns of the multi-beam lithography system suffer from chromatic and spherical aberration, even when the electron beam is exactly on the symmetric axis of the micro-column. The off-axis error of the electron emitting source is expected to become worse with increasing off-axis distance of the focusing spot. Especially the electron beams far from the system optical axis have a non-negligible asymmetric intensity distribution in the micro-column. In this paper, the effect of the off-axis e-beam source is analyzed. To analyze this effect is to introduce a micro-column model of which the e-beam emitting source is aligned with the center of the electron beam by shifting them perpendicular to the system optical axis. The presented solution can be used to analysis the performance of the multi-electron-beam system. The performance parameters, such as the working distances and the focusing position are obtained by the computational simulations as a function of the off-axis distance of the emitting source.

Electron beam lithography patterning research for stamper fabrication using nano-injection molding (나노사출성형용 스탬퍼 제작을 위한 Electron beam lithography 패터닝 연구)

  • Uhm S.J.;Seo Y.H.;Yoo Y.E.;Choi D.S.;Je T.J.;Whang K.H.
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.698-701
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    • 2005
  • We have investigated experimentally a nano patterning using electron beam lithography for the nickel stamper fabrication. Recently, DVD and Blu-ray disk(BD) have nano-scale patterns in order to increase the storage density. Specially, BD has 100nm-scale patterns which are generally fabricated by electron beam lithography. In this paper, we found optimum condition of electron-beam lithography for 100nm-scale patterning. We controlled various conditions of EHP(acceleration voltage), beam current, dose and aperture size in order to obtain optimum conditions. We used 100nm-thick PMMA layer on a silicon wafer as photoresist. We found that EHP was the most dominant factor in electron-beam lithography.

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Development parameter measurement and profile analysis of electron beam resist for lithography simulation (리소그라피 모의실험을 위한 전자빔용 감광막의 현상 변수 측정과 프로파일 분석)

  • 함영묵;이창범;서태원;전국진;조광섭
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.7
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    • pp.198-204
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    • 1996
  • Electron beam lithography is one of the importnat technologies which can delineate deep submicron patterns. REcently, electron beam lithography is being applied in delineating the critical layers of semiconductor device fabrication. In this paper, we present a development simulation program for electron beam lithography and study the development profiles of resist when resist is exposed by the electron beam. Experimentally, the development parameter of positive and negative resists are measured and the data is applied to input parameter of the simulation program. Also simulation results are compared of the process results in the view of resist profiles. As a result, for PMMA and SAL 601 resist, the trend of simulation to the values of process parameters agree with real process results very well, so that the process results can be predicted by the simulation.

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Direct Patterning of Self Assembled Nano-Structures of Block Copolymers via Electron Beam Lithography

  • Yoon Bo Kyung;Hwang Wonseok;Park Youn Jung;Hwang Jiyoung;Park Cheolmin;Chang Joonyeon
    • Macromolecular research
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    • v.13 no.5
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    • pp.435-440
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    • 2005
  • This study describes a method where the match of two different length scales, i.e., the patterns from self-assembled block copolymer (<50 nm) and electron beam writing (>50 nm), allow the nanometer scale pattern mask. The method is based on using block copolymers containing a poly(methyl methacrylate) (PMMA) block, which is subject to be decomposed under an electron beam, as a pattern resist for electron beam lithography. Electron beam on self assembled block copolymer thin film selectively etches PMMA microdomains, giving rise to a polymeric nano-pattern mask on which subsequent evaporation of chromium produces the arrays of Cr nanoparticles followed by lifting off the mask. Furthermore, electron beam lithography was performed on the micropatterned block copolymer film fabricated by micro-imprinting, leading to a hierarchical self assembled pattern where a broad range of length scales was effectively assembled, ranging from several tens of nanometers, through submicrons, to a few microns.

Study on The Electron-Beam Optics in The Micro-Column for The Multi-Beam Lithography (다중빔 리소그래피를 위한 초소형 컬럼의 전자빔 광학 해석에 관한 연구)

  • Lee, Eung-Ki
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.4
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    • pp.43-48
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    • 2009
  • The aim of this paper is to describe the development of the electron-beam optic analysis algorithm for simulating the e-beam behavior concerned with electrostatic lenses and their focal properties in the micro-column of the multi-beam lithography system. The electrostatic lens consists of an array of electrodes held at different potentials. The electrostatic lens, the so-called einzel lens, which is composed of three electrodes, is used to focus the electron beam by adjusting the voltages of the electrodes. The optics of an electron beam penetrating a region of an electric field is similar to the situation in light optics. The electron is accelerated or decelerated, and the trajectory depends on the angle of incidence with respect to the equi-potential surfaces of the field. The performance parameters, such as the working distances and the beam diameters are obtained by the computational simulations as a function of the focusing voltages of the einzel lens electrodes. Based on the developed simulation algorithm, the high performance of the micro-column can be achieved through optimized control of the einzel lens.

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A Study on Pattern Fabrication using Proximity Effect Correction in E-Beam Lithography (전자빔 리소그래피에서의 근접효과 보정을 이용한 패턴 제작에 관한 연구)

  • Oh, Se-Kyu;Kim, Dong-Hwan;Kim, Seung-Jae
    • Journal of the Semiconductor & Display Technology
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    • v.8 no.2
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    • pp.1-10
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    • 2009
  • This study describes the electron beam lithography pattern fabrication using the proximity effect correction. When electron beam exposes into electron beam resist, the beam tends to spread inside the substance (forward scattering). And the electron beam reflected from substrate spreads again (back scattering). These two effects influence to distribution of the energy and give rise to a proximity effect while a small pattern is generated. In this article, an electron energy distribution is modeled using Gaussian shaped beam distribution and those parameters in the model are computed to solidify the model. The proximity effect is analyzed through simulations and appropriate corrections to reducing the proximity effect are suggested. It is found that the proximate effect can be reduced by adopting schemes of dose adjustment, and the optimal dose is determined through simulations. The proposed corrected proximity effect correction is proved by experiments.

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The Control and Motion Characteristics of 5 axis Vacuum Stage for Electron Beam Lithography (전자빔 가공기용 진공 5축 스테이지의 제어 및 운동특성)

  • 이찬홍;박천홍;이후상
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • pp.890-893
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    • 2004
  • The ultra precision machining in industrial field are increased day by day. The diamond turning has been used generally, but now is faced with limitation of use, because of higher requirement of production field. The electron beam lithography is alternative in machining area as semiconductor production. For EB lithography, 5 axis vacuum stage is required to duplicate small and large patterns on wafer. The stage is composed of 2 rotational axis and 3 translational axis with 5 DC servo motors. The positioning repeatability and resolution of Z axis feed unit are 3.21$\mu$m and 0.5 $\mu$m/step enough to apply to lithography.

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Research on the penetration depth of low-energy electron beam in the PMMA-resist film using Monte Carlo numerical analysis (Monte Carlo 수치해석법을 이용한 PMMA resist에서의 저 에너지 전자빔 투과 깊이에 관한 연구)

  • Ahn, Seung-Joon;Ahn, Seong-Joon;Kim, Ho-Seob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.8 no.4
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    • pp.743-747
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    • 2007
  • There has been steady effect for the development of the electron-beam lithography technologies for the circuit patterning of the future semiconductor devices. In this study, we have performed a Monte-Carlo simulation whore $1{\times}10^4$ electrons with various kinetic energies (100eV, 300eV, 500eV, 700eV, and 1000eV) were shot into polymethyl methacrylate(PMMA) resist of 100-nm thickness. The penetration depth of each electron beam in the resist layer were analyzed using Gaussian analysis method.

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