• Title, Summary, Keyword: on-chip power module

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Optimization of Thermal Performance in Nano-Pore Silicon-Based LED Module for High Power Applications

  • Chuluunbaatar, Zorigt;Kim, Nam-Young
    • International Journal of Internet, Broadcasting and Communication
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    • v.7 no.2
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    • pp.161-167
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    • 2015
  • The performance of high power LEDs highly depends on the junction temperature. Operating at high junction temperature causes elevation of the overall thermal resistance which causes degradation of light intensity and lifetime. Thus, appropriate thermal management is critical for LED packaging. The main goal of this research is to improve thermal resistance by optimizing and comparing nano-pore silicon-based thermal substrate to insulated metal substrate and direct bonded copper thermal substrate. The thermal resistance of the packages are evaluated using computation fluid dynamic approach for 1 W single chip LED module.

The effect of inlet air temperature for the cooling of the military electronic chip on the thermal conductive board (공기온도가 열전도성 기판 위에 탑재된 군용 전자칩 냉각에 미치는 영향)

  • 이진호
    • Journal of the Korea Institute of Military Science and Technology
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    • v.5 no.2
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    • pp.195-206
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    • 2002
  • The conjugate heat transfer from the simulated module in a horizontal channel with the variation of inlet air temperature is experimentally investigated. The aim of this study is to estimate temperature difference between a module and inlet air. This study is performed with the variation of parameters that are inlet air temperature(Ti=25~$55^{\circ}C), thermal resistance( $R_c$=0.05, 4.11, 158 K/W), inlet air velocity(Vi=0.1~1.5m/s), and input power(Q=3, 7 W). The results show that the effect of inlet air temperature is little, at the case of using conductive board. And input power was most effective parameter on the temperature difference between module and Inlet air.

A Fully Synthesizable Bluetooth Baseband Module for a System-on-a-Chip

  • Chun, Ik-Jae;Kim, Bo-Gwan;Park, In-Cheol
    • ETRI Journal
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    • v.25 no.5
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    • pp.328-336
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    • 2003
  • Bluetooth is a specification for short-range wireless communication using the 2.4 GHz ISM band. It emphasizes low complexity, low power, and low cost. This paper describes an area-efficient digital baseband module for wireless technology. For area-efficiency, we carefully consider hardware and software partitioning. We implement complex control tasks of the Bluetooth baseband layer protocols in software running on an embedded microcontroller. Hardware-efficient functions, such as low-level bitstream link control; host controller interfaces (HCIs), such as universal asynchronous receiver transmitter (UART) and universal serial bus (USB)interfaces; and audio Codec are performed by dedicated hardware blocks. Furthermore, we eliminate FIFOs for data buffering between hardware functional units. The design is done using fully synthesizable Verilog HDL to enhance the portability between process technologies so that our module can be easily integrated as an intellectual property core no system-on-a-chip (SoC) ASICs. A field programmable gate array (FPGA) prototype of this module was tested for functional verification and realtime operation of file and bitstream transfers between PCs. The module was fabricated in a $0.25-{\mu}m$ CMOS technology, the core size of which was only 2.79 $mm{\times}2.80mm$.

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HPA MMIC to W/G Antenna Transition Loss Analysis and Development Results of W-band Transmitter Module

  • Kim, Wansik;Jung, Juyong;Lee, Juyoung;Kim, Jongpil
    • International Journal of Advanced Culture Technology
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    • v.7 no.4
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    • pp.236-241
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    • 2019
  • This paper will read about a multichannel frequency-modulated continuous wave (FMCW) radar sensor with switching transmit (TX) antennas is developed at W-band. To achieve a high angular resolution, a uniform linear array consisting of 5 switching-TX and 12 receive (RX) antennas is employed with the digital beamforming technique. The overall radar front-end module comprises a W-band transceiver and TX/RX antennas. A multichannel transceiver module consists of 5 up-conversion and 12 down-conversion channels, where one of the TX channels is sequentially switched ON. For developing transmitter, we developed an HPA (high power amplified) MMIC chip for W-band radar system and fabricated a transmitter module using this chip. In order to develop the W-band transmitter, we analyzed the important antenna transition structure from HPA MMIC line to W/G (Waveguide)antenna via M/S(microstrip) and fabricated it with 5 transmission channels. As a result, the output power of the transmitter was within 1 dB of the error range after analysis and measurement under normal temperature and environmental conditions.

Numerical Prediction of Solder Fatigue Life in a High Power IGBT Module Using Ribbon Bonding

  • Suh, Il-Woong;Jung, Hoon-Sun;Lee, Young-Ho;Choa, Sung-Hoon
    • Journal of Power Electronics
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    • v.16 no.5
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    • pp.1843-1850
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    • 2016
  • This study focused on predicting the fatigue life of an insulated gate bipolar transistor (IGBT) power module for electric locomotives. The effects of different wiring technologies, including aluminum wires, copper wires, aluminum ribbons, and copper ribbons, on solder fatigue life were investigated to meet the high power requirement of the IGBT module. The module's temperature distribution and solder fatigue behavior were investigated through coupled electro-thermo-mechanical analysis based on the finite element method. The ribbons attained a chip junction temperature that was 30℃ lower than that attained with conventional round wires. The ribbons also exhibited a lower plastic strain in comparison with the wires. However, the difference in plastic strain and junction temperature among the different ribbon materials was relatively small. The ribbons also exhibited different crack propagation behaviors relative to the wires. For the wires, the cracks initiated at the outmost edge of the solder, whereas for the ribbons, the cracks grew in the solder layer beneath the ribbons. Comparison of fatigue failure areas indicated that ribbon bonding technology could substantially enhance the fatigue life of IGBT modules and be a potential candidate for high power modules.

Effect by Change of Geometries and Material Properties for Flip-Chip (플립 칩의 기하학적 형상과 구성재료의 변화에 따른 효과)

  • Kwon, Yong-Su;Choi, Sung-Ryul
    • Journal of the Korean Society of Industry Convergence
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    • v.3 no.1
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    • pp.69-75
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    • 2000
  • Multichip packages are comprised of dissimilar materials which expand at different rates on heating. The differential expansion must be accommodated by the various structural elements of the package. A types of heat exposures occur operation cycles. This study presents a finite element analysis simulation of flip-chip among multichip. The effects of geometries and material properties on the reliability were estimated during the analysis of temperature and thermal stress of flip-chip. From the results, it could be obtained that the more significant parameters to the reliability of flip-chip arc chip power cycle, heat convection and height of solder bump.

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Design and Fabrication of the System in Package for the Digital Broadcasting Receiver (디지털 방송 수신용 System in Package 설계 및 제작)

  • Kim, Jee-Gyun;Lee, Heon-Yong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.1
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    • pp.107-112
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    • 2009
  • This paper describes design and fabrication issues of the SiP(System in Package) one-chip for a portable digital broadcasting receiver. It includes RF tuner chip, demodulator chip and passive components for the receiver system. When we apply the SiP one-chip technology to the broadcasting receiver, the system board size can be reduced from $776mm^2$ to $144mm^2$. SiP one-chip has an advantage that the area reduces more 81% than separated chips. Also the sensitivity performance advances -1dBm about 36 channels in the RF weak electric field, the power consumption reduces about 2mW and the C/N keeps on the same level.

A Numerical Study of NAND Flash Memory on the cooling effect (낸드플래시 메모리의 냉각효과에 관한 수치적 연구)

  • Kim, Ki-Jun;Koo, Kyo-Woog;Lim, Hyo-Jae;Lee, Hyouk
    • 한국전산유체공학회:학술대회논문집
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    • pp.117-123
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    • 2011
  • The low electric power and high efficiency chips are required because of the appearance of smart phones. Also, high-capacity memory chips are needed. e-MMC(embedded Multi-Media Card) for this is defined by JEDEC(Joint Electron Device Engineering Council). The e-MMC memory for research and development is a memory mulit-chip module of 64GB using 16-multilayers of 4GB NAND-flash memory. And it has simplified the chip by using SIP technique. But mulit-chip module generates high heat by higher integration. According to the result of study, whenever semiconductor chip is about 10 $^{\circ}C$ higher than the design temperature it makes the life of the chip shorten more than 50%. Therefore, it is required that we solve the problem of heating value and make the efficiency of e-MMC improved. In this study, geometry of 16-multilayered structure is compared the temperature distribution of four different geometries along the numerical analysis. As a result, it is con finned that a multilayer structure of stair type is more efficient than a multilayer structure of vertical type because a multi-layer structure of stair type is about 9 $^{\circ}C$ lower than a multilayer structure of vertical type.

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Improvement in Thermomechanical Reliability of Power Conversion Modules Using SiC Power Semiconductors: A Comparison of SiC and Si via FEM Simulation

  • Kim, Cheolgyu;Oh, Chulmin;Choi, Yunhwa;Jang, Kyung-Oun;Kim, Taek-Soo
    • Journal of the Microelectronics and Packaging Society
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    • v.25 no.3
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    • pp.21-30
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    • 2018
  • Driven by the recent energy saving trend, conventional silicon based power conversion modules are being replaced by modules using silicon carbide. Previous papers have focused mainly on the electrical advantages of silicon carbide semiconductors that can be used to design switching devices with much lower losses than conventional silicon based devices. However, no systematic study of their thermomechanical reliability in power conversion modules using finite element method (FEM) simulation has been presented. In this paper, silicon and silicon carbide based power devices with three-phase switching were designed and compared from the viewpoint of thermomechanical reliability. The switching loss of power conversion module was measured by the switching loss evaluation system and measured switching loss data was used for the thermal FEM simulation. Temperature and stress/strain distributions were analyzed. Finally, a thermal fatigue simulation was conducted to analyze the creep phenomenon of the joining materials. It was shown that at the working frequency of 20 kHz, the maximum temperature and stress of the power conversion module with SiC chips were reduced by 56% and 47%, respectively, compared with Si chips. In addition, the creep equivalent strain of joining material in SiC chip was reduced by 53% after thermal cycle, compared with the joining material in Si chip.

Experimental Investigations for Thermal Mutual Evaluation in Multi-Chip Modules

  • Ayadi, Moez;Bouguezzi, Sihem;Ghariani, Moez;Neji, Rafik
    • Journal of Power Electronics
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    • v.14 no.6
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    • pp.1345-1356
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    • 2014
  • The thermal behavior of power modules is an important criterion for the design of cooling systems and optimum thermal structure of these modules. An important consideration for high power and high frequency design is the spacing between semiconductor devices, substrate structure and influence of the boundary condition in the case. This study focuses on the thermal behavior of hybrid power modules to establish a simplified method that allows temperature estimation in different module components without decapsulation. This study resulted in a correction of the junction temperature values estimated from the transient thermal impedance of each component operating alone. The corrections depend on mutual thermal coupling between different chips of the hybrid structure. A new experimental technique for thermal mutual evaluation is presented. Notably, the classic analysis of thermal phenomena in these structures, which was independent of dissipated power magnitude and boundary conditions in the case, is incorrect.