• Title, Summary, Keyword: on-chip power module

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Design of Miniaturized Wireless Sensor Node Using System-on-Chip (SoC를 이용한 소형 무선 센서 노드 설계)

  • Kim, Hyun-Joong;Yang, Hyun-Ho
    • Proceedings of the KAIS Fall Conference
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    • pp.190-193
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    • 2009
  • The most essential element in wireless sensor network is wireless sensor node which collects environmental information and transmits it to the user application systems. Recently, due to the technological advancement, wireless sensor nodes are become smaller, more intelligent and less power consuming. Especially, SoC(System-on-Chip) technology, which unifies the MCU, RF module, memory and other element inside one chip, plays an important part for miniaturization of sensor node, hence reduces the manufacturing expenses. In this paper, we have designed a miniaturized wireless sensor node for wireless sensor network using commercial SoC technology and discussed about some application scenario and additional considerations.

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Digital Data Communication System for Mobile Network System Using CC1020 Chip (CC1020 Chip을 사용한 모바일 네트워크를 위한 디지털 데이터 통신 시스템)

  • Lim, Hyun-Jin;So, Heung-Kuk
    • Journal of the Institute of Convergence Signal Processing
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    • v.8 no.1
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    • pp.58-62
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    • 2007
  • Digital communication is important for reliability and mobilization of the multi-channel communication systems. Transmitting and receiving data for the mobilization should be possible in anywhere and in anytime. And this system must be designed light weight small size and low power. One are essential technology for implementing the mobile wireless communication system on the age of ubiquotos. Requirements in constructing such communication field are followings. At first data transmitting and receiving should be carried out by a simple command. Second, the device should be designed as hand-hold type and low power consumption. Third, data communication should be reliable. As one of examples, car to car system which is popular in the market is introduced here, All traffic information in highway is transmitted from one car to another by using this system which can prevent possible traffic accident. This paper shows the design of a digital data communication system with CC1020 chip. This CC1020 makes easy frequency selection and easy switch from the transmit mode to the receive mode by simple setting of a memory register in the chip. The transmit power of this system is designed 10dBm and its communication range is about 100m. The power supplied this system is 3V considered as low power. The sleep mode can be easily entered during transmit mode or receive mode. We shows the program algorithm of CC1020 and interface circuit between MCU and CC1020. We shows the Photo of the CC1020 Module and Atmega128 Module.. We analysed the receiver rate with this system.

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A 100MHz DC-DC Converter Using Integrated Inductor and Capacitor as a Power Module for SoC Power Management (SoC 전원 관리를 위한 인덕터와 커패시터 내장형 100MHz DC-DC 부스트 변환기)

  • Lee, Min-Woo;Kim, Hyoung-Joong;Roh, Jeong-Jin
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.46 no.8
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    • pp.31-40
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    • 2009
  • This paper presents a design of a high performance DC-DC boost converter as a power module for SOC designs. It applied to this chip that reduced inductor and capacitor for integrating on a chip, and it operates with a switching frequency of 100MHz. It has reliability and stability in high switching frequency. The controller of DC-DC boost converter is designed by voltage-mode control method and compensated properly. The designed DC-DC converter is fabricated with the 0.18${\mu}m$ standard CMOS technology with a thick-gate oxide option. The overall die size is 8.14$mm^2$, and controller size is 1.15$mm^2$. The converter has the maximum efficiency over 76% for the output voltage of 4V and load current larger 300mA. The load regulation is 0.012% (0.5mV) for the load current change of 100mA.

Performance Analysis of 800Gb/s ATM Switching MCM (800Gb/s ATM 스위칭 MCM의 성능분석)

  • Jung, Un-Suk;Kim, Hoon;Park, Kwang-Chae
    • Proceedings of the IEEK Conference
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    • pp.155-158
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    • 2001
  • A 640Gb/s high-speed ATM switching system that is based on the technologies of advanced MCM, 0.25um CMOS and optical WDM interconnection is fabricated for future N-ISDN services. A 40 layer, 160mm$\times$114mm ceramic MCM realizes the basic ATM switch module with 80Gbps throughput. The basic unit ATM switch module with 80Gb/s throughput. The basic unit ATM switch MCM consists of in 8 chip advanced 0.25um CMOS VLSI and 32 chip I/O Bipolar VLSIs. The MCM employs an 40 layer, very thin layer ceramic MCM and a uniquely structured closed loop type liquid colling system is adopted to cope with the MCM's high-power dissipation of 230w. The MCM is Mounted on a 32cm$\times$50cm mother board. A three stage ATM switch is realized by optical WDM interconnection between the high-performance MCM.

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A Study on the Application of Thermoelectric Module to the Electric Telecommunication Equipment Cooling (열전소자를 이용한 전자 통신장비 냉각에 관한 연구)

  • Kim, Jong-Soo;Im, Yong-Bin;Kong, Sang-Un
    • Journal of Fisheries and Marine Sciences Education
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    • v.16 no.2
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    • pp.210-217
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    • 2004
  • Cooling technology has been a vital prerequisite for the rapid, if not explosive, growth of the electronic equipment industry. This has been especially true during the last 20 years with the advent of intergrated circuit chips and their applications in computers and related electronic products. The purpose of this study is to develop a telecommunication equipment cooling system using a thermoelectric module combined with cooling fan. Thermoelectric module is a device that can perform cooling only by input of electric power. In the present study, the cooling package using the thermoeletric module has been developed to improve the thermal performance. The cooling characteristics of the electronic chip was placed into the subrack and it can be rapidly assembled or disassembled in the equipment rack. As a preliminary experiment, the cooling performances between a conventional way using a cooling fin and a proposed method applying the thermoelectric module was comosed and analyzyed. The cooling performance at a simulated electronic component packaging a thermomodule operated well.

Evaluation of EM Susceptibility of an PLL on Power Domain Networks of Various Printed Circuit Boards (다양한 PCB의 전원 분배 망에서의 PLL의 전자기 내성 검증)

  • Hwang, Won-Jun;Wee, Jae-Kyung
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.5
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    • pp.74-82
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    • 2015
  • As the complexity of an electronic device and the reduction of its operating voltage is progressing, susceptibility test of the chip and module for internal or external noises is essential. Although the immunity compliance of the chip was served with IEC 62132-4 Direct Power Injection method as an industry standard, in fact, EM immunity of the chip is influenced by their Power Domain Network (PDN). This paper evaluates the EM noise tolerance of a PLL and compares their noise transfer characteristics to the PLL on various PCB boards. To make differences of the PDNs of PCBs, various PCBs with or without LDO and with several types of capacitors are tested. For evaluation of discrepancies between EM characteristics of an IC only and the IC on real boards, the analysis of the noise transfer characteristics according to the PDNs shows that it gives important information for the design having robust EM characteristics. DPI measurement results show that greatly improved immunity of the PLL in the low-frequency region according to using the LDO and a frequency change of the PLL according to the DPI could also check with TEM cell measurement spectrum.

Analysis of thermal characteristic variations in LD arrays packaged by flip-chip solder-bump bonding technique (플립 칩 본딩으로 패키징한 레이저 다이오우드 어레이의 열적 특성 변화 분석)

  • 서종화;정종민;지윤규
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.3
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    • pp.140-151
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    • 1996
  • In this paper, we analyze the variations of thermal characteristics of LD (laser diode) arrays packaged by a flip-chip bonding method. When we simulate the temperature distribution in LD arrays with a BEM (boundary element method) program coded in this paper, we find that thermal crosstalks in LD arrays packaged by the flip-chip bonding method increases by 250-340% compared to that in LD arrays packaged by previous methods. In the LD array module packaged by the flip-chip bonding technique without TEC (thermo-electric cooler), the important parameter is the absolute temperature of the active layer increased due cooler), the important parameter is the absolute temperature of th eactiv elayers of LD arrays to thermal crosstalk. And we find that the temperature of the active layers of LD arrays increases up to 125$^{\circ}C$ whenall four LDs, without a carefully designed heatsink, are turned on, assuming the power consumption of 100mW from each LD. In order to reduce thermal crosstalk we propose a heatsink sturcture which can decrease the temeprature at the active layer by 40%.

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A Miniaturized 2.5 GHz 8 W GaN HEMT Power Amplifier Module Using Selectively Anodized Aluminum Oxide Substrate (선택적 산화 알루미늄 기판을 이용한 소형 2.5 GHz 8 W GaN HEMT 전력 증폭기 모듈)

  • Jeong, Hae-Chang;Oh, Hyun-Seok;Yeom, Kyung-Whan
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.12
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    • pp.1069-1077
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    • 2011
  • In this paper, a design and fabrication of a miniaturized 2.5 GHz 8 W power amplifier using selectively anodized aluminum oxide(SAAO) substrate are presented. The process of SAAO substrate is recently proposed and patented by Wavenics Inc. which uses aluminum as wafer. The selected active device is a commercially available GaN HEMT chip of TriQuint company, which is recently released. The optimum impedances for power amplifier design were extracted using the custom tuning jig composed of tunable passive components. The class-F power amplifier are designed based on EM co-simulation of impedance matching circuit. The matching circuit is realized in SAAO substrate. For integration and matching in the small package module, spiral inductors and single layer capacitors are used. The fabricated power amplifier with $4.4{\times}4.4\;mm^2$ shows the efficiency above 40 % and harmonic suppression above 30 dBc for the second(2nd) and the third(3rd) harmonic at the output power of 8 W.

Characteristics of Embedded R, L, C Fabricated by Using LTCC-M Technology and Development of a PAM for LMR thereby (LTCC-M 기술을 이용한 내부실장 R, L, C 수동소자의 특징 및 LMR용 PAM개발)

  • 김인태;박성대;강현규;공선식;박윤휘;문제도
    • Journal of the Microelectronics and Packaging Society
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    • v.7 no.1
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    • pp.13-18
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    • 2000
  • Low temperature co-fired ceramics on metal (LTCC-M) is efficient for embedding passive components with good tolerance in a module due to the dimensional stability in x and y directions by the constraint of metal core during the firing. In addition, the radiation noise can be reduced by metal core. In this paper, embedded passive components were introduced and a power amplifier module (PAM) fabricated by using the passive components was explained. The embedded passive components in test patters showed the tolerance of 10~20% and the good repeatability in tolerance of embedded passives was maintained in module fabrication. The shortened traces in multi chip modules (MCMs) make the signal delay time decreased and the embedded passives simplify the packaging processes owing to the less solder points, which enhance the electrical performance and increase the reliability of the modules. The LTCC-M technology is one of the promising candidates for RF application and is expected to expand its applications to power and high performance devices.

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