• Title, Summary, Keyword: patterned magnetic cells

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Anisotropy Coupling in Patterned Thin Films with Mixed Uniaxial Anisotropies

  • Nam, Yoon Jae;Lee, Tae Young;Lim, Sang Ho
    • Journal of Magnetics
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    • v.19 no.3
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    • pp.232-236
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    • 2014
  • Anisotropy coupling in thin films with mixed induced and shape anisotropies is investigated. A 200-nm-thick Co-Fe-Pd-B thin film with a large induced anisotropy of 57 Oe is fabricated and then patterned into micron-sized cells to provide shape anisotropy, whose strength has a similar magnitude to that of the induced anisotropy for enhancing the anisotropy coupling. The angles between the two mixed anisotropies considered are $0^{\circ}$, $90^{\circ}$, and $110^{\circ}$. Hysteresis loops measured under in-plane magnetic fields along various directions indicate no anisotropy coupling behaviour for all the three angles examined in this study.

Detection of Magnetic Nanoparticles and Fe-hemoglobin inside Red Blood Cells by Using a Highly Sensitive Spin Valve Device

  • Park, Sang-Hyun;Soh, Kwang-Sup;Hwang, Do-Guwn;Rhee, Jang-Roh;Lee, Sang-Suk
    • Journal of Magnetics
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    • v.13 no.1
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    • pp.30-33
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    • 2008
  • A highly sensitive, giant magnetoresistance-spin valve (GMR-SV) biosensing device with high linearity and very low hysteresis was fabricated by photolithography. The detection of magnetic nanoparticles and Fe-hemoglobin inside red blood cells using the GMR-SV biosensing device was investigated. When a sensing current of 1 mA was applied to the current electrode in the patterned active devices with an area of $2{\times}6{\mu}m^2$, the output signals were about 13.35 mV. The signal from even one drop of human blood and nanoparticles in distilled water was sufficient for their detection and analysis.

Effects of Shape Anisotropy on Memory Characteristics of NiFe/Co/Cu/Co Spin Valve Memory Cells (NiFe/Co/Cu/Co 스핀밸브 자기저항 메모리 셀에서 형상자기이방성이 메모리 특성에 미치는 영향)

  • 김형준;조권구;주승기
    • Journal of the Korean Magnetics Society
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    • v.9 no.6
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    • pp.301-305
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    • 1999
  • NiFe(60$\AA$)/Co(5$\AA$)/Cu(60$\AA$)/Co(30$\AA$) spin valve thin films were patterned into magnetoresistive random access memory (MRAM) cells by a conventional optical lithography process and their output and switching properties were characterized with respect to the cell size and geometry. When 1 mA of constant sense current was applied to the cells, a few or a few tens of mV of output voltage was measured within about 30 Oe of external magnetic field, which is an adequate output property for the commercializing of competitive MRAM devices. In order to resolve the problem of increase in the switching thresholds of magnetic layers with the downsizing of MRAM cells, a new approach using the controlled shape anisotropy was suggested and interpreted by a simple calculation of anisotropy energies of magnetic layers consisting of the cells. This concept gave a reduced switching threshold in NiFe(60$\AA$)/Co(5$\AA$) layer consisting of the patterned cells from about 15 Oe to 5 Oe and it was thought that this concept would be much helpful for the realization of competitive MRAM devices.

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