• Title, Summary, Keyword: pentacene

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A Study of Soluble Pentacene Thin Film for Organic Thin Film Transistor (유기박막트랜지스터 적용을 위한 Soluble Pentacene 박막의 특성연구)

  • Gong, Su-Cheol;Lim, Hun-Seong;Shin, Ik-Sub;Park, Hyung-Ho;Jeon, Hyeong-Tag;Chang, Young-Chul;Chang, Ho-Jung
    • Journal of the Microelectronics and Packaging Society
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    • v.14 no.3
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    • pp.1-6
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    • 2007
  • In this study, the pentacene thin films were prepared by the soluble process, and characterized fur the application of the organic thin film transistor(OTFT) device. To dissolve the pentacene material, two kinds of solvents such as toluene and chloroform were used, and the effects of these solvents on the properties of pentacene thin films coated on ITO/Glass substrate were investigated. Pentacene thin films were prepared by using spin-coating methode and characterized the surface morphology, crystalline and electrical properties. From the AFM measurement, the surface morphology of the pentacene film dissolved with chloroform was improved compared with the one dissolved with toluene solvent. XRD measurement showed that all prepared pentacene film samples were amorphous crystal phases without crystallization of the films. The electrical properties of the pentacene film dissolved with chloroform showed better results than the ones using toluene solvent by hall measurement system. The carrier concentration and the mobility values of pentacene films using chloroform solvent were found to be $-3.225{\times}10^{14}\;cm^{-3}$ and $3.5{\times}10^{-1}\;cm^2{\cdot}V^{-1}{\cdot}S^[-1}$, respectively. The resistivity was about $2.5{\times}10^2\;{\Omega}{\cdot}cm$.

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Comparative Study on Interfacial Traps in Organic Thin-Film Transistors According to Deposition Methods of Organic Semiconductors

  • Park, Jae-Hoon;Bae, Jin-Hyuk
    • Journal of the Korean Applied Science and Technology
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    • v.30 no.2
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    • pp.290-296
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    • 2013
  • We analysed interfacial traps in organic thin-film transistors (TFTs) in which pentacene and 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) organic semiconductors were deposited by means of vacuum-thermal evaporation and drop-coating methods, respectively. The thermally-deposited pentacene film consists of dentritic grains with the average grain size of around 1 m, while plate-like crystals over a few hundred microns are observed in the solution-processed TIPS-pentacene film. From the transfer characteristics of both TFTs, lower subthreshold slope of 1.02 V/decade was obtained in the TIPS-pentacene TFT, compared to that (2.63 V/decade) of the pentacene transistor. The interfacial trap density values calculated from the subthreshold slope are about $3.4{\times}10^{12}/cm^2$ and $9.4{\times}10^{12}/cm^2$ for the TIPS-pentacene and pentacene TFTs, respectively. Herein, lower subthreshold slope and less interfacial traps in TIPS-pentacene TFTs are attributed to less domain boundaries in the solution-processed TIPS-pentacene film.

Physical and electrical characteristics of Pentacene thin films prepared by (유기 분자선 증착법에 의해 성막된 Pentacene 박막의 물리적, 전기적 특성에 관한 연구)

  • 김대엽;김대식;최종선;강도열;김영관
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.605-608
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    • 1999
  • We report investigations on a Pentacene thin film as a component for active layer of Organic thin film transistors. Pentacene film was deposited by Organic Molecular Beam Deposition(OMBD) and Al electrode was deposoted by vacuum evaporation. Electrical characterization of Pentacene films were measured by the three-terminal contact resistance methods, as the results contact resistance between pentacene films and the Aluminium electrode is 5.064G$\Omega$. The Al contact with the pentacene shows the bottom contact resistance. From the current-voltage characteristics, electrical conductivity of the Pentacene film is found as ~ 10$^{-4}$ /cm. physical characterization of pentacene films were measured by UV-spectrum and Cyclic-Voltammetry method.

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A Study of Soluble Pentacene Films for Organic Transistors (유기 트랜지스터 제작을 위한 Soluble Pentacene 박막의 특성연구)

  • Lim, Hun-Seong;Gong, Su-Cheol;Shin, Ik-Sub;Chang, Ho-Jung
    • Proceedings of the KAIS Fall Conference
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    • pp.136-138
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    • 2007
  • 본 연구에서는 유기박막트랜지스터 (OTFT, Organic Thin film Transistor) 제작을 위한 채널막으로 pentacene의 soluble 공정 과 soluble 공정 올 통하여 제작된 pentacene 박막의 특성 을 분석 하여 유기박막트랜지스터에 적용 여부를 조사하였다. Pentacene을 용해시키기 위한 용제로는 toluene과 chloroform을 사용하였으며, 각각의 용제에 대하여 열처리를 하여 pentacene 용액을 준비하였다. Spin-coating 법으로 pentacene 유기 박막을 제작하여 각 박막의 결정화 특성을 관찰하였다. XRD 회절 분석 결과 chloroform 올 이용한 pentacene 박막에서만 결정화가 된 것이 확인이 되었다. Hall effect measurement 분석 결과 chloroform올 이 용한, pentacene 박막의 전하농도 (Carrier Concentration)는 $-3.225{\times}1014(c{\cdot}cm^{-3})$를 나타내었고, 이동도 (Mobility)는 $3.5{\times}10^{-l}(cm^2{\cdot}V^{-1}{\cdot}S^{-1})$를 각각 나타내었다.

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Effects of Peripheral Pentacene Region on C-V Characteristics of Metal-Oxide-Pentacene Capacitor Structure

  • Jung, Keum-Dong;Jin, Sung-Hun;Park, Chang-Bum;Shin, Hyung-Cheol;Park, Byung-Gook;Lee, Jong-Duk
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1284-1287
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    • 2005
  • Peripheral pentacene region gives a significant influence on C-V characteristics of metal-oxide-pentacene capacitor structure. When the gate voltage goes toward negative, the effect of peripheral pentacene region becomes larger. Remaining gate DC bias constant and changing small signal frequency, the capacitance of peripheral pentacene changes along with frequency so that the total capacitance value also changes. The influence of peripheral pentacene region should be removed to measure accurate C-V characteristics, because it is hard to take into account the effect of the region quantitatively. After removing the influence of peripheral pentacene region, acceptor concentration, flat band voltage and depletion width of pentacene thin film are extracted from an accurate C-V curve as $1.58{\times}10^{17}cm^{-3}$, -1.54 V and 39.4 nm, respectively.

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Effect of Dodecane on the Surface Structure and the Electronic Properties of Pentacene on Modified Si (001)

  • Kim, Beom-sik;Kang, Hee Jae;Seo, Soonjoo;Park, Nam Seok
    • Applied Science and Convergence Technology
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    • v.25 no.2
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    • pp.28-31
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    • 2016
  • The structural and the electronic properties of pentacene on modified Si (001) were investigated using scanning tunneling microscopy (STM), atomic force microscopy (AFM) and ultraviolet photoelectron spectroscopy (UPS). Dodecane was used to modify Si (001) substrates and then pentacene was deposited on dodecane/Si (001). Our STM results show a uniform distribution of aggregated dodecane molecules all over the clean Si (001). The surface structure of pentacene on dodecaene/Si (001) examined by AFM is analogous to that of pentacene on $SiO_2$. The UPS data showed that the work function of pentacene on clean Si (001) and pentacene on modified Si (001) with dodecane was 6.41 and 5.57 eV, respectively. Our results prove that dodecane results in the work function difference between pentacene on clean Si (001) and pentacene on dodecane/Si (001).

Pentacene Thin Film Transistors with Various Polymer Gate Insulators

  • Kim, Jae-Kyoung;Kim, Jung-Min;Yoon, Tae-Sik;Lee, Hyun-Ho;Jeon, D.;Kim, Yong-Sang
    • Journal of Electrical Engineering and Technology
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    • v.4 no.1
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    • pp.118-122
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    • 2009
  • Organic thin film transistors with a pentacene active layer and various polymer gate insulators were fabricated and their performances were investigated. Characteristics of pentacene thin film transistors on different polymer substrates were investigated using an atomic force microscope (AFM) and x-ray diffraction (XRD). The pentacene thin films were deposited by thermal evaporation on the gate insulators of various polymers. Hexamethyldisilazane (HMDS), polyvinyl acetate (PVA) and polymethyl methacrylate (PMMA) were fabricated as the gate insulator where a pentacene layer was deposited at 40, 55, 70, 85, 100 oC. Pentacene thin films on PMMA showed the largest grain size and least trap concentration. In addition, pentacene TFTs of top-contact geometry are compared with PMMA and $SiO_2$ as gate insulators, respectively. We also fabricated pentacene TFT with Poly (3, 4-ethylenedioxythiophene)-Polysturene Sulfonate (PEDOT:PSS) electrode by inkjet printing method. The physical and electrical characteristics of each gate insulator were tested and analyzed by AFM and I-V measurement. It was found that the performance of TFT was mainly determined by morphology of pentacene rather than the physical or chemical structure of the polymer gate insulator

Effects of the Deposition Rate of Pentacene Film on the Electrical Characteristics of Organic Thin-film Transistors

  • Park, Jae-Hoon;Lee, Yong-Soo;Kang, Chang-Heon;Kim, Yeon-Ju;Choi, Jong-Sun
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.649-652
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    • 2003
  • Organic thin-film transistors were fabricated using pentacene as an active electronic material. Device characteristics are improved with increasing the deposition rate of pentacene. It is observed that the deposition rate influences on the interface properties between pentacene and polystyrene, and the molecular ordering of pentacene film. In this paper, we report the effects of the deposition rate of pentacene film on the device performance.

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Iodine Doping of Pentacene and its Electrical Properties

  • Rahim, Abdur;Lee, Young-Kyu;Lee, Chi-Young;Lee, Jae-Gab
    • Proceedings of the Materials Research Society of Korea Conference
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    • pp.238.2-238.2
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    • 2011
  • Organic thin film transistors (OTFTs) have been attracting considerable attention because of their potential use in low-cost, large area, electronic devices such as flexible displays, biochemical sensors, and smart cards. In past several years, gold/pentacene has been frequently used in OTFTs because of the high mobility of pentacene and the high work function of gold. To improve the performance of the OTFTs contact area doping of pentacene with p-doping materials are well known. In this work we demonstrated selectively contact area doping of pentacene with Iodine vapor. For effective doping elevated pentacene layer under the source-drain area was deposited and exposed to Iodine vapor. We got better electrical performance for elevated pentacene structure rather than planer structure with relatively high field-effect mobility.

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Structure Effects on Organic Thin-Film Transistor Properties of Dinaphthyl Substituted Pentacene Derivatives

  • Son, Ji-Hee;Kang, In-Nam;Oh, Se-Young;Park, Jong-Wook
    • Bulletin of the Korean Chemical Society
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    • v.28 no.6
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    • pp.995-998
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    • 2007
  • Pentacene moiety has been widely studied in Organic Thin-Film Transistor (OTFT) device as a channel layer because of high carrier mobility. In this study, we have fabricated vertical type Organic Static Induction Transistors (SITs) using pentacene, 6,13-Dinaphthalen-1-ly-Pentacene (1-DNP, 3), and 6,13-Dinaphthalen-2- ly-Pentacene (2-DNP, 4). 1-DNP and 2-DNP have same naphtyl group with pentacene, but different linked position and spatial arrangement. We have checked the static characteristics of materials in vertical type SITs device. We found that pentacene has as on/off ratio of 14.56, 1-DNP and 2-DNP shows as on/off ratio of 36.58 and 6.61 at VDS = 2V in SIT, respectively.