• Title, Summary, Keyword: power breakdown

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A study on the v-t characteristics of interfaces between Toughened Epoxy and Rubber with Inverse Power Law (역승법칙을 이용한 터픈드 Epoxy/Rubber 계면의 V-t 특성에 관한 연구)

  • 박정규;이동규;오현석;신철기;박건호;박우현;이기식;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.437-440
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    • 2000
  • In this study, the interfacial dielectric breakdown phenomenon of interface between Epoxy and Rubber was discussed, which affects the stability of insulation system of power delivery devices. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long time breakdown life time can be evaluated.

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Prediction of Life-Time on the Macroscopic Interface between Solid Materials with Analysis of V-t Characteristics (V-t 특성 분석에 의한 고체 거시계면의 수명 평가)

  • 오재한;이경섭;배덕권;김충혁;이준웅
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.7
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    • pp.607-611
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    • 2000
  • The characteristics on the interface between Epoxy and EPDM which are materials of the underground insulation systems of power delivery have studied. The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law and the long breakdown life time can be evaluated. AC breakdown strength and life time is improved by oiling to the interface. When the low viscosity oil is spread interface has the highest life time.

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Effect oh Heat Treatment on Breakdown Properties in the Joint Interface of Power Cables (전력케이블 절연접속계면의 절연파괴 특성에 미치는 열처리 효과)

  • 이창종;김진수;박강식;한상옥
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.11 no.7
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    • pp.502-507
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    • 1998
  • The purpose of this study is to investigate the breakdown properties in joint interface of power cables with heat treatment. The specimens have the structure of XLPE/EPDM interface like the joint of distribution power cable. The breakdown characteristics of the SLPE/EPDM joint were studied with crosslinking by=products. AC breakdown voltages were measured with heat treatment time and interfacial materials and crosslinking by-products as testing factors. This study has shown that crosslinking by-product gases play an important role at the insulation properties of cable joints by heating. The dielectric strength shows the lowest values at 4 hours heat treatment. The AC breakdown strength in the untreated sample was increased with heat treatment time.

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The Properties of Interfacial breakdown and Effect of the Oil, Roughness and Pressure on the Silicone Rubber/XLPE (복합계면에 따른 절연파괴특성과 오일, 거칠기, 압력에 따른 영향)

  • Lee, Yu-Jung;Lee, Un-Yong;Cho, Han-Goo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.332-333
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    • 2006
  • The properties of a cable Insulate capacity between surfaces with the variation of the interfacial breakdown, the addition of silicon oil, the variation of pressure and interfacial roughness were investigated. The Insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were reported by varying the surfaces condition of silicon rubber, XLPE used for connection materials of a power cable.

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Electrical Breakdown Properties of Oil-paper Insulation under Pulsating Voltage Influenced by Temperature

  • Bao, Lianwei;Li, Jian;Zhang, Jing;Li, Xudong
    • Journal of Electrical Engineering and Technology
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    • v.11 no.6
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    • pp.1735-1743
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    • 2016
  • Insulation of valve-side windings in converter transformer withstands pulsating voltages, which will produce more serious insulation problems. In this paper, the electric breakdown experiments of oil-paper insulation specimens were executed at pulsating voltages and different temperatures. Experiment and analysis results showed that the breakdown voltage decreased with increasing temperature under pulsating voltage. The influence of temperature proves to be more significant once the temperature exceeds a limitation threshold. A fitting formula between breakdown voltage and the temperature was reported. Finally, in order to clearly understand the breakdown properties under pulsating voltage, the electric field distribution and space charge behavior under pulsating voltage at different temperature were discussed.

The Study for the Breakdown Characteristics of Interface between LSR-XLPE, EPDM-XLPE by the Interfacial Treatment Condition (LSR-XLPE, EPDM-XLPE 이종계면에서의 계면처리에 따른 절연파괴특성)

  • Cho, Han-Goo;Lee, Yu-Jung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.460-461
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    • 2007
  • In this paper, we studied the properties of a cable insulate capacity between surfaces with the variation of the interfacial breakdown. As a function of silicon oil, the variation of pressure and interfacial roughness were investigated. The insulate trouble of a power cable is out of the interfacial parts, which breakdown the insulate breakdown capacity in a power cable. In this study, the analysis of electric field and the phenomenon of interfacial breakdown were improved by increased interfacial pressure, decreased surface roughness, and oil. And It was shown that interfacial breakdown LSR-XLPE insulators is higher that of EPDM-XLPE.

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Analysis of the breakdown characteristics of SOI LIGBT with dual-epi layer (이중에피층을 갖는 SOI LIGBT의 항복전압 특성분석)

  • Kim, Hyoung-Woo;Kim, Sang-Cheol;Seo, Kil-Soo;Kim, Eun-Dong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.249-251
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    • 2003
  • This paper discribes the analysis of the breakdown voltage characteristics of SOI LIGBT with dual epi-layer. In case of SOI LIGBT with dual epi-layer, if we used high doping concentration in epi-layer, we obtained higher breakdown voltage compared with typical device because of charge compensation effect, and we obtained low on-state resistivity characteristic in the same breakdown voltage. In this paper, we analyzed on-state and off-state characteristics of SOI LIGBT with dual epi-layer. Breakdown voltage of proposed LIGBT was shown 125V when $T_1=T_2=2.5{\mu}m$, $N_1=7{\times}10^{15}/cm^3$ and $N_2=3{\times}10^{15}/cm^3$, respectively Although we used high doping concentration and thin epi-layer thickness, breakdown voltage was increased compared with conventional devices.

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A Study on Characteristic Improvement of IGBT with P-floating Layer

  • Kyoung, Sinsu;Jung, Eun Sik;Kang, Ey Goo
    • Journal of Electrical Engineering and Technology
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    • v.9 no.2
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    • pp.686-694
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    • 2014
  • A power semiconductor device, usually used as a switch or rectifier, is very significant in the modern power industry. The power semiconductor, in terms of its physical properties, requires a high breakdown voltage to turn off, a low on-state resistance to reduce static loss, and a fast switching speed to reduce dynamic loss. Among those parameters, the breakdown voltage and on-state resistance rely on the doping concentration of the drift region in the power semiconductor, this effect can be more important for a higher voltage device. Although the low doping concentration in the drift region increases the breakdown voltage, the on-state resistance that is increased along with it makes the static loss characteristic deteriorate. On the other hand, although the high doping concentration in the drift region reduces on-state resistance, the breakdown voltage is decreased, which limits the scope of its applications. This addresses the fact that breakdown voltage and on-state resistance are in a trade-off relationship with a parameter of the doping concentration in the drift region. Such a trade-off relationship is a hindrance to the development of power semiconductor devices that have idealistic characteristics. In this study, a novel structure is proposed for the Insulated Gate Bipolar Transistor (IGBT) device that uses conductivity modulation, which makes it possible to increase the breakdown voltage without changing the on-state resistance through use of a P-floating layer. More specifically in the proposed IGBT structure, a P-floating layer was inserted into the drift region, which results in an alleviation of the trade-off relationship between the on-state resistance and the breakdown voltage. The increase of breakdown voltage in the proposed IGBT structure has been analyzed both theoretically and through simulations, and it is verified through measurement of actual samples.

Study on the Prediction of the Life-time in the Macroscopic Solid-Solid Interfaces (고체-고체 거시계면의 수명예측에 관한 연구)

  • 박정규;배덕권;정동회;오재한;김충혁;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • pp.775-778
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    • 2000
  • In this paper, the life-time of macro interface between Epoxy/EPDM which consists in underground power cable joints is predicted. The electrode system of specimen is designed by FEM(finite elements method). The breakdown strength of specimens are observed by applying high AC voltage at the room temperature. The breakdown times under the constant voltage below the breakdown voltage were gained. As constant voltage is applied, the breakdown time is proportion to the breakdown strength. The life exponent n is gained by inverse power law, and the long breakdown life time can be evaluated.

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Diamond Schottky Barrier Diodes With Field Plate (필드 플레이트가 설계된 다이아몬드 쇼트키 장벽 다이오드)

  • Chang, Hae Nyung;Kang, Dong-Won;Ha, Min-Woo
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.4
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    • pp.659-665
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    • 2017
  • Power semiconductor devices required the low on-resistance and high breakdown voltage. Wide band-gap materials opened a new technology of the power devices which promised a thin drift layer at an identical breakdown voltage. The diamond had the wide band-gap of 5.5 eV which induced the low power loss, high breakdown capability, low intrinsic carrier generation, and high operation temperature. We investigated the p-type pseudo-vertical diamond Schottky barrier diodes using a numerical simulation. The impact ionization rate was material to calculating the breakdown voltage. We revised the impact ionization rate of the diamond for adjusting the parallel-plane breakdown field at 10 MV/cm. Effects of the field plate on the breakdown voltage was also analyzed. A conventional diamond Schottky barrier diode without field plate exhibited the high forward current of 0.52 A/mm and low on-resistance of $1.71{\Omega}-mm$ at the forward voltage of 2 V. The simulated breakdown field of the conventional device was 13.3 MV/cm. The breakdown voltage of the conventional device and proposed devices with the $SiO_2$ passivation layer, anode field plate (AFP), and cathode field plate (CFP) was 680, 810, 810, and 1020 V, respectively. The AFP cannot alleviate the concentration of the electric field at the cathode edge. The CFP increased the breakdown voltage with evidences of the electric field and potential. However, we should consider the dielectric breakdown because the ideal breakdown field of the diamond is higher than that of the $SiO_2$, which is widely used as the passivation layer. The real breakdown voltage of the device with CFP decreased from 1020 to 565 V due to the dielectric breakdown.