• Title, Summary, Keyword: reactive sputtering

Search Result 593, Processing Time 0.096 seconds

Interlayer Formation During the Reactive DC Magnetron Sputtering Process (직류 마그네트론 스퍼터링 공정 중 타겟 오염에 따른 박막 및 계면 형성 특성)

  • Lee, Jin Young;Hur, I Min;Lee, Jae-Ok;Kang, Woo Seok
    • Journal of the Semiconductor & Display Technology
    • /
    • v.18 no.1
    • /
    • pp.1-4
    • /
    • 2019
  • Reactive sputtering is widely used because of its high deposition rate and high step coverage. The deposition layer is often affected by target poisoning because the target conditions are changed, as well, by reactive gases during the initial stage of sputtering process. The reactive gas affects the deposition rate and process stability (target poisoning), and it also leads unintended oxide interlayer formation. Although the target poisoning mechanism has been well known, little attention has been paid on understanding the interlayer formation during the reactive sputtering. In this research, we studied the interlayer formation during the reactive sputtering. A DC magnetron sputtering process is carried out to deposit an aluminum oxide film on a silicon wafer. From the real-time process monitoring and material analysis, the target poisoning phenomena changes the reactive gas balance at the initial stage, and affects the interlayer formation during the reactive sputtering process.

  • PDF

Characterization and deposition of ZnO thin films by Reactive Magnetron Sputtering using Inductively-Coupled Plasma (ICP) (유도결합형 플라즈마를 사용한 반응성 마그네트론 스퍼터링에 의한 ZnO 박막 증착 및 특성분석)

  • Kim, Dong-Sun
    • Journal of the Semiconductor & Display Technology
    • /
    • v.10 no.2
    • /
    • pp.83-89
    • /
    • 2011
  • In this study, we investigated the effects of shutter control by Reactive Magnetron Sputtering using Inductively-Coupled Plasma(ICP) for obtaining ZnO thin films with high purity. The surface morphologies and structure of deposited ZnO thin films were characterized using Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM) and X-ray Diffractometer (XRD). Also, optical and chemical properties of ZnO thin films were analyzed by Spectroscopic Ellipsometer (SE) and X-ray Photoelectron spectroscopy (XPS). As a result, it observed that ZnO thin films grown at reactive sputtering using shutter control and ICP were higher density, lower surface roughness, better crystallinity than other conventional sputtering deposition methods. For obtaining better quality deposition ZnO thin films, we will investigate the effects of substrate temperature and RF power on shutter control by a reactive magnetron sputtering using inductively-coupled plasma.

HIPIMS Arc-Free Reactive Deposition of Non-conductive Films Using the Applied Material ENDURA 200 mm Cluster Tool

  • Chistyakov, Roman
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • /
    • pp.96-97
    • /
    • 2012
  • In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

  • PDF

Structural and Optical Properties of TiO2 Thin Films Prepared by RF Reactive Magnetron Sputtering (RF reactive magnetron sputtering으로 제조한 TiO2 박막의 구조 및 광학적 특성)

  • Gang, Gye-Won;Lee, Yeong-Hun;Gwak, Jae-Cheon;Lee, Dong-Gu;Jeong, Bong-Gyo;Park, Seong-Ho;Choe, Byeong-Ho
    • Korean Journal of Materials Research
    • /
    • v.12 no.6
    • /
    • pp.452-457
    • /
    • 2002
  • Titanium oxide films were prepared by RF reactive magnetron sputtering. The effect of sputtering conditions on structural and optical properties was investigated systemically as a function of sputtering pressure(5~20 mTorr) and $O_2/Ar$ flow ratio(0.08~0.4). The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. At low sputtering pressure and $O_2/Ar$ flow ratio, the films had preferred orientations along [101] and [200] directions. As the sputtering pressure and $O_2/Ar$ flow ratio increased, the intensity of the 101 and 200 diffraction peaks decreased gradually. The microstructure of the sputtered films showed the fine grain size (20nm~50nm) and columnar microcrystals perpendicular to the substrate. With increasing the sputtering pressure and decreasing $O_2/Ar$ flow ratio, the sputtered films showed the more porous columnar structure. XPS analysis showed that stoichiometric $TiO_2$ films were deposited at 7 mTorr sputtering pressure and 0.2 $O_2/Ar$ flow ratio. The results of the X-ray diffraction showed that all films had only the anatase $TiO_2$ phase. Ellipsometeric analysis showed that the refractive index increased from 2.32 to 2.46 as the sputtering pressure decreased. The packing density calculated using the refractive index varied from 0.923 to 0.976, indicating that $TiO_2$films became denser as the sputtering pressure decreased.

Fabrication of Fe3O4 Thin Film using Reactive DC Magnetron Sputtering (반응성 DC 마그네트론 스퍼터링으로 Fe3O4 박막 제조에 관한 연구)

  • Jung, Minkyung;Park, Sungmin;Park, Daewon;Lee, Seong-Rae
    • Korean Journal of Metals and Materials
    • /
    • v.47 no.6
    • /
    • pp.378-382
    • /
    • 2009
  • We investigated the effects of deposition conditions on the fabrication of $Fe_{3}O_{4}$ thin films using a reactive DC magnetron sputtering at room temperature. The structural, electrical, and magnetic properties of Fe oxide films dependence on the film thickness, oxygen flow rate, and the substrate crystallinity were also studied. We have successfully fabricated $Fe_{3}O_{4}$ film with thickness of about 10 nm under optimal reactive sputtering conditions. The saturation magnetization, resistivity, and Verwey transition of the $Fe_{3}O_{4}$ film were298 emu/cc, $4.0{\times}10^{-2}{\Omega}cm$, and 125 K, respectively.

Electrical and optical properties of ZnO:Al thin films prepared by reactive sputtering method (반응성 sputtering법으로 제막된 ZnO : Al 박막의 전기.광학적 특성)

  • 유병석;유세웅;이정훈
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.6 no.4
    • /
    • pp.480-492
    • /
    • 1996
  • AZO (Aluminum doped Zinc Oxide) transparent conducting thin films were fabricated by reactive DC mangnetron sputtering method using zinc target containing 2 wt% of Al. Transition range with optimum transmittance and conductivity was obtained by contrlling partial pressure of reactive oxygen gas. Sputtering condition for this transition range could be kept stable by regulating the target voltage. According to XRD analysis, there was only one peak for (002) plane in AZO films and the films deposited in transition range.

  • PDF

Anti-Reflection Coating Application of SixOy-SixNy Stacked-Layer Fabricated by Reactive Sputtering (반응성 스퍼터링으로 제작된 SixOy-SixNy 적층구조의 반사방지 코팅 응용)

  • Gim, Tzang-Jo;Lee, Boong-Joo;Shina, Paik-Kyun
    • Journal of the Korean Vacuum Society
    • /
    • v.19 no.5
    • /
    • pp.341-346
    • /
    • 2010
  • In this paper, anti-reflection coating was investigated for decreasing the reflection in visible range of 400~650 [nm] through four staked layers of $Si_xO_y$ and $Si_xN_y$ thin films prepared by reactive sputtering method. Si single crystal of 6 [inch] diameter was used as a sputtering target. Ar and $O_2$ gases were used as sputtering gases for reactive sputtering for the $Si_xO_y$ thin film, and Ar and $N_2$ gases were used for reactive sputtering for the $Si_xN_y$ thin film. DC pulse power of 1900 [W] was used for the reactive sputtering. Refractive index and deposition rate were 1.50 and 2.3 [nm/sec] for the $Si_xO_y$, and 1.94 and 1.8 [nm/sec] for the $Si_xN_y$ thin film, respectively. Considering the simulation of the four layer anti-reflection coating structure with the above mentioned films, the $Si_xO_y-Si_xN_y$ stacked four-layer structure was prepared. The reflection measurement result for that structure showed that a "W" shaped anti-reflection was obtained successfully with a reflection of 1.7 [%] at 550 [nm] region and a reflection of 1 [%] at 400~650 [nm] range.

Reactive Sputtering Process for $CuIn_{1-x}Ga_xSe_2$ Thin Film Solar Cells

  • Park, Nae-Man;Lee, Ho Sub;Kim, Jeha
    • ETRI Journal
    • /
    • v.34 no.5
    • /
    • pp.779-782
    • /
    • 2012
  • $CuIn_{1-x}Ga_xSe_2$ (CIGS) thin films are grown on Mo/soda lime glass using a reactive sputtering process in which a Se cracker is used to deliver reactive Se molecules. The Cu and $(In_{0.7}Ga_{0.3})_2Se_3$ targets are simultaneously sputtered under the delivery of reactive Se. The effects of Se flux on film composition are investigated. The Cu/(In+Ga) composition ratio increases as the Se flux increases at a plasma power of less than 30 W for the Cu target. The (112) crystal orientation becomes dominant, and crystal grain size is larger with Se flux. The power conversion efficiency of a solar cell fabricated using an 800-nm CIGS film is 8.5%.