• Title, Summary, Keyword: self-heating

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Dynamic Self-Heating Effects of Bulk and SOI FinFET with Realistic Device Structure (실제적 구조를 가진 벌크 및 SOI FinFET에서 발생하는 동적 self-heating 효과)

  • Ryu, Heesang;Chung, Hayun Cecillia;Yang, Ji-Woon
    • Journal of the Institute of Electronics and Information Engineers
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    • v.52 no.10
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    • pp.64-69
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    • 2015
  • Self-heating effects of bulk and SOI FinFETs on device structure are examined with TCAD simulation. The degradation of drive current in SOI FinFET is severer than that of bulk one in steady-state condition as expected. However, it is shown that the dynamic self-heating effects of SOI FinFETs are comparable to those of bulk FinFETs for high speed logic operation, especially in realistic device structure.

Analysis on Self-Heating Effect in 7 nm Node Bulk FinFET Device

  • Yoo, Sung-Won;Kim, Hyunsuk;Kang, Myounggon;Shin, Hyungcheol
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.16 no.2
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    • pp.204-209
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    • 2016
  • The analyses on self-heating effect in 7 nm node non-rectangular Bulk FinFET device were performed using 3D device simulation with consideration to contact via and pad. From self-heating effect simulation, the position where the maximum lattice temperature occurs in Bulk FinFET device was investigated. Through the comparison of thermal resistance at each node, main heat transfer path in Bulk FinFET device can be determined. Self-heating effect with device parameter and operation temperature was also analyzed and compared. In addition, the impact of interconnects which are connected between the device on self-heating effect was investigated.

A Fundamental Study On the Self-Sufficient Heating Energy for Residential Building (주거용 건물의 난방 에너지 자립을 위한 기초 연구)

  • Son, Sun-Woo;Baek, Nam-Choon;Suh, Seung-Jik
    • 한국신재생에너지학회:학술대회논문집
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    • pp.255-258
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    • 2009
  • Leading developed countries have studied energy self-sufficient houses such as zero or low energy buildings to reduce energy consumption for buildings since the early 1990s. Moreover, some developed countries have actually constructed self-sufficient houses and operated them for demonstration, expanding use of such houses. Korea has also established Zero Energy Solar House(ZeSH) and studied energy independence. Therefore, this study analyzed research result regarding ZeSH, self-sufficient energy house hold of Korea, found out technologies used for heating energy independence, used building interpretation program(ESP_r) to evaluate performance of each factors and analyzed energy reduction quantitatively. Results from the research are as follows: Reduction rate of actual detached house's heating load was also analyzed quantitatively depending on application of each technology. When each factor was applied step-by-step, annual reduction rate of heating load depending on increase in insulation thickness reached 6.6~22.2 %. Annual reduction rate of heating load depending on increase insulation thickness, and change in window heating performance and area ratio reached 31.5 %. Annual reduction rate of heating load through high-sealing and high-insulation depending on change in leakage rate reached 40.0~88.9 %. Annual reduction of heating load, when Mass Wall and attached sun space was applied were applied reached 28.5~39.2 %, respectively.

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Electrical instabilities in p-channel polysilicon TFTs: role of hot carrier and self-heating effects

  • Fortunato, G.;Gaucci, P.;Mariucci, L.;Pecora, A.;Valletta, A.
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.1065-1070
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    • 2007
  • The effects of hot carriers and self-heating on the electrical stability of p-channel TFTs have been analysed combining experimental data and numerical simulations. While hot carrier effects were shown not to induce appreciable degradation, self-heating related instability was found to more seriously affect the device characteristics. New models have been developed to explain the reported results.

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Dependence of Self-heating Effect on Width/Length Dimension in p-type Polycrystalline Silicon Thin Film Transistors

  • Lee, Seok-Woo;Kim, Young-Joo;Park, Soo-Jeong;Kang, Ho-Chul;Kim, Chang-Yeon;Kim, Chang-Dong;Chung, In-Jae
    • 한국정보디스플레이학회:학술대회논문집
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    • pp.505-508
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    • 2006
  • Self-heating induced device degradation and its width/length (W/L) dimension dependence were studied in p-type polycrystalline silicon (poly-Si) thin film transistors (TFTs). Negative channel conductance was observed under high power region of output curve, which was mainly caused by hole trapping into gate oxide and also by trap state generation by self-heating effect. Self-heating effect became aggravated as W/L ratio was increased, which was understood by the differences in heat dissipation capability. By reducing applied power density normalized to TFT area, self-heating induced degradation could be reduced.

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Three-Dimensional Analysis of Self-Heating Effects in SOI Device (SOI 소자 셀프-히팅 효과의 3차원적 해석)

  • 이준하;이흥주
    • Journal of the Semiconductor & Display Technology
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    • v.3 no.4
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    • pp.29-32
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    • 2004
  • Fully depleted Silicon-on-Insulator (FD-SOI) devices lead to better electrical characteristics than bulk CMOS devices. However, the presence of a thin top silicon layer and a buried SiO2 layer causes self-heating due to the low thermal conductivity of the buried oxide. The electrical characteristics of FDSOI devices strongly depend on the path of heat dissipation. In this paper, we present a new three-dimensional (3-D) analysis technique for the self-heating effect of the finger-type and bar-type transistors. The 3-D analysis results show that the drain current of the finger-type transistor is 14.7% smaller than that of the bar-type transistor due to the 3-D self-heating effect. We have learned that the rate of current degradation increases significantly when the width of a transistor is smaller that a critical value in a finger-type layout. The current degradation fro the 3-D structures of the finger-type and bar-type transistors is investigated and the design issues are also discussed.

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Fire Cause Reasoning of Self-regulating Heating Cable by a Fire Investigation Applying the Scientific Method and Fault Tree Analysis (과학적 방법을 적용한 화재조사와 결함수 분석을 이용한 정온전선의 발화원인 추론)

  • Kim, Doo-Hyun;Lee, Heung-Su
    • Fire Science and Engineering
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    • v.30 no.4
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    • pp.73-81
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    • 2016
  • A self-regulating heating cable is an electrical heating element by flowing an electric current between parallel conductors filled with an extruded semi-conductive polymer. Self-regulating heating cables are used mainly for frost protection purposes because the construction is convenient and the price is low. On the other hand, structural problems with imperfections of the insulation can cause a fire despite their usefulness. This paper deduced a direct method to derive the cause by investigating the scene of a fire due to a self-regulating heating cable and analyzed the basic problem using fault tree analysis. In this paper, the actual fire scene was a cold storage warehouse, and fire investigation was conducted. After investigating the fire scene and fault tree analysis, the cause of the fire could be attributed to dielectric breakdown of the self-regulating heating cable. This paper could be utilized in the fire safety activities and similar fire investigations.

Numerical Simulation on Self-heating for Interlayer Tunneling Spectroscopy in $Bi_2Sr_2CaCu_2O_{8+x}$

  • Park, Jae-Hyun;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.9 no.1
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    • pp.18-22
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    • 2007
  • For interlayer tunneling spectroscopy using a small stack of $Bi_2Sr_2CaCu_2O_{8+x}$ (Bi-2212) intrinsic junctions in a high-bias range, large self-heating takes place due to the poor thermal conductivity of Bi-2212. In this study, we numerically estimate the self-heating around a Bi-2212 sample stack for I-V or dI/dV-V measurements. Our results show that the temperature discrepancy between the Bi-2212 sample stack and top Au electrodes due to bias-induced self-heating is small enough along the c-axis direction of Bi-2212. On the other hand, the lateral temperature discrepancy between the sample stack and the Bi-2212 on-chip thermometer stack can be as large as ${\sim}20\;K$ for the highest bias required to observe the pseudogap hump structure. We thus suggest a new in-situ ac thermometry, employing the Au current-bias electrode itself deposited on top of the sample stack as the resistive thermometer layer, which is supposed to allow safe temperature measurements for the interlayer tunneling spectroscopy.

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Pair-Wise Serial ROIC for Uncooled Microbolometer Array

  • Haider, Syed Irtaza;Majzoub, Sohaib;Alturaigi, Mohammed;Abdel-Rahman, Mohamed
    • IEIE Transactions on Smart Processing and Computing
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    • v.4 no.4
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    • pp.251-257
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    • 2015
  • This work presents modelling and simulation of a readout integrated circuit (ROIC) design considering pair-wise serial configuration along with thermal modeling of an uncooled microbolometer array. A fully differential approach is used at the input stage in order to reduce fixed pattern noise due to the process variation and self-heating-related issues. Each pair of microbolometers is pulse-biased such that they both fall under the same self-heating point along the self-heating trend line. A ${\pm}10%$ process variation is considered. The proposed design is simulated with a reference input image consisting of an array of $127{\times}92$ pixels. This configuration uses only one unity gain differential amplifier along with a single 14-bit analog-to-digital converter in order to minimize the dynamic range requirement of the ROIC.

Self-Oscillating Switching Technique for Current Source Parallel Resonant Induction Heating Systems

  • Namadmalan, Alireza;Moghani, Javad Shokrollahi
    • Journal of Power Electronics
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    • v.12 no.6
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    • pp.851-858
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    • 2012
  • This paper presents resonant inverter tuning for current source parallel resonant induction heating systems based on a new self oscillating switching technique. The phase error is suppressed in a wide range of operating frequencies in comparison with Phase Locked Loop (PLL) techniques. The proposed switching method has the capability of tuning under fast changes in the resonant frequency. According to this switching method, a multi-frequency induction heating (IH) system is proposed by using a single inverter. In comparison with multi-level inverter based IH systems, the advantages of this technique are its simple structure, better transients and wide range of operating frequencies. A laboratory prototype was built with an operating frequency of 35 kHz to 55 kHz and 300 W of output power. The performance of the IH system shows the validity of the new switching technique.