• Title, Summary, Keyword: stacked configuration

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Fabrication of Microstrip Stacked-SIR Bandpass Filter with DGS (DGS 구조를 갖는 마이크로스트립 다단 SIR 대역통과 여파기의 제작)

  • 고동성;마태진;김정근
    • Proceedings of the IEEK Conference
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    • pp.331-334
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    • 2003
  • This letter presents the design and measured performance of bandpass filters based on a stacked-SIR (stepped impedance resonators) configuration with DGS (Defected Ground Structure). An unit DGS configuration is designed and analyzed to show the phase characteristic of proposed slow-wave structure. The SIR filter with DGS has been yielded better stop band and sharper skirt behavior than conventional bandpass filter.

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Modeling and Analysis of High Speed Serial Links (SerDes) for Hybrid Memory Cube Systems (하이브리드 메모리 큐브 (HMC) 시스템의 고속 직렬 링크 (SerDes)를 위한 모델링 및 성능 분석)

  • Jeon, Dong-Ik;Chung, Ki-Seok
    • IEMEK Journal of Embedded Systems and Applications
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    • v.12 no.4
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    • pp.193-204
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    • 2017
  • Various 3D-stacked DRAMs have been proposed to overcome the memory wall problem. Hybrid Memory Cube (HMC) is a true 3D-stacked DRAM with stacked DRAM layers on top of a logic layer. The logic die is mainly used to implement a memory controller for HMC, and it is connected through a high speed serial link called SerDes with a host that is either a processor or another HMC. In HMC, the serial link is crucial for both performance and power consumption. Therefore, it is important that the link is configured properly so that the required performance should be satisfied while the power consumption is minimized. In this paper, we propose a HMC system model included the high speed serial link to estimate performance accurately. Since the link modeling strictly follows the link flow control mechanism defined in the HMC spec, the actual HMC performance can be estimated accurately with respect to each link configuration. Various simulations are conducted in order to deduce the correlation between the HMC performance and the link configuration with regard to memory utilization. It is confirmed that there is a strong correlation between the achievable maximum performance of HMC and the link configuration in terms of both bandwidth and latency. Therefore, it is possible to find the best link configuration when the required HMC performance is known in advance, and finding the best configuration will lead to significant power saving while the performance requirement is satisfied.

Realization of Vertically Stacked InGaAs/GaAs Quantum Wires on V-Grooves with (322) Facet Sidewalls by CHEMICAL Beam Epitaxy

  • Kim, Sung-Bock;Ro, Jeong-Rae;Lee, El-Hang
    • ETRI Journal
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    • v.20 no.2
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    • pp.231-240
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    • 1998
  • We report, for the first time, the fabrication of vertically stacked InGaAs/GaAs quantum wires (QWRs) on V-grooved substrates by chemical beam epitaxy (CBE). To fabricate the vertically stacked QWRs structure, we have grown the GaAs resharpening barrier layers on V-grooves with (100)-(322) facet configuration instead of (100)-(111) base at 450 $^{\circ}C$. Under the conditions of low growth temperature, the growth rate of GaAs on the (322) sidewall is higher than that at the (100) bottom. Transmission electron microscopy verifies that the vertically stacked InGaAs QWRs were formed in sizes of about $200{\AA} {\times} 500{\sim}600 {\AA}$. Three distinct photoluminescence peaks related with side-quantum wells (QWLs), top-QWLs and QWRs were observed even at 200 K due to sufficient carrier and optical confinement. These results strongly suggest the existence of the quantized state in the vertically stacked InGaAs/GaAs QWRs grown by CBE.

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Broadband Stacked Patch Antenna with Low VSWR and Low Cross-Polarization

  • Wang, Zhongbao;Fang, Shaojun;Fu, Shiqiang
    • ETRI Journal
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    • v.32 no.4
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    • pp.618-621
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    • 2010
  • A low cross-polarization broadband stacked patch antenna is proposed. By means of the stacked patch configuration and probe-fed strip feed technique, the VSWR 1.2:1 bandwidth of the patch antenna is enhanced to 22% from 804 MHz to 1,002 MHz, which outperforms the other available patch antennas (<10%). Furthermore, the antenna has a cross-polarization level of less than -20 dB and a gain level of about 9 dBi across the operating bandwidth. Simulation results are compared with the measurements, and a good agreement is observed.

A Stacked Pad Area Array Package for 224MHz RF Transceiver Modules (224MHz RF 송수신 회로의 적층형 PAA 패키지)

  • Nam, Sang-Woo;Hong, Seok-Yong;Jee, Yong
    • Proceedings of the IEEK Conference
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    • pp.187-190
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    • 2000
  • We presents the construction of radio frequency pad area array package modules which operate at radio frequency of 224MHz, and proposes the structure of RF module packages to improve its electrical characteristics. The module of RF PAA package was constructed in the configuration of three dimensional stacked package and reduced size. RF PAA packages showed the optimized and improved gain of 2dB by partitioning the RF transceiver with 3 dimensional stacked PAA packages.

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Quantitative identification of the fluxon-flow modes in a stack of intrinsic Josephson junctions of $Bi_2$$Sr_2$Ca$Cu_2$$O_{8+x}$ single crystals

  • Bae, Myung-Ho;Lee, Hu-Jong
    • Progress in Superconductivity
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    • v.5 no.1
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    • pp.9-12
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    • 2003
  • We observed the splitting of the fluxon-flow branches in the current-voltage characteristics of serially stacked intrinsic Josephson junctions (IJJs) formed in $Bi_2$$Sr_2$$CaCu_2$$O_{ 8+x}$ single crystals in the long-junction limit. Stacks of IJJs were sandwiched between two Au electrodes deposited on the top and the bottom of the stack using the ‘double-side cleaving technique’. In all the samples studied, the branch splitting started occurring for a dense fluxon configuration around 2 T and became more distinct in a higher magnetic field range. This observation can be explained in terms of switching between different Josephson fluxon modes in resonance with the collective plasma oscillations induced by both inductive and capacitive coupling between stacked IJJs. This is the first detailed and quantitative identification of the coherent flux-flow modes in stacked..

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Stacked Pad Area Away Package Modules for a Radio Frequency Transceiver Circuit (RF 송수신 회로의 적층형 PAA 패키지 모듈)

  • Jee, Yong;Nam, Sang-Woo;Hong, Seok-Yong
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.38 no.10
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    • pp.687-698
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    • 2001
  • This paper presents a three dimensional stacked pad area away (PAA) package configuration as an implementation method of radio frequency (RF) circuits. 224MHz RF circuits of intelligence traffic system(ITS) were constructed with the stacked PAA RF pakage configuration. In the process of manufacturing the stacked PAA RF pakage, RF circuits were partitioned to subareas following their function and operating frequency. Each area of circuits separated to each subunits. The operating characteristics of RF PAA package module and the electrical properties of each subunits were examined. The measurement of electrical parameters for solder balls which were interconnects for stacked PAA RF packages showed that the parasitic capacitance and inductance were 30fF and 120pH, respectively, which might be negligible in PAA RF packaging system. HP 4396B network/spectrum analyzer revealed that the amplification gain of a receiver and transmitter at 224 MHz was 22dB and 27dB, respectively. The gain was 3dB lower than designed values. The difference was probably generated from fabrication process of the circuits by employing commercial standard

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GHz EMI Characteristics of 3D Stacked Chip PDN with Through Silicon Via (TSV) Connections

  • Pak, Jun-So;Cho, Jong-Hyun;Kim, Joo-Hee;Kim, Ki-Young;Kim, Hee-Gon;Lee, Jun-Ho;Lee, Hyung-Dong;Park, Kun-Woo;Kim, Joung-Ho
    • Journal of electromagnetic engineering and science
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    • v.11 no.4
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    • pp.282-289
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    • 2011
  • GHz electromagnetic interference (EMI) characteristics are analyzed for a 3dimensional (3D) stacked chip power distribution network (PDN) with through silicon via (TSV) connections. The EMI problem is mostly raised by P/G (power/ground) noise due to high switching current magnitudes and high PDN impedances. The 3D stacked chip PDN is decomposed into P/G TSVs and vertically stacked capacitive chip PDNs. The TSV inductances combine with the chip PDN capacitances produce resonances and increase the PDN impedance level in the GHz frequency range. These effects depend on stacking configurations and P/G TSV designs and are analyzed using the P/G TSV model and chip PDN model. When a small size chip PDN and a large size chip PDN are stacked, the small one's impedance is more seriously affected by TSV effects and shows higher levels. As a P/G TSV location is moved to a corner of the chip PDNs, larger PDN impedances appear. When P/G TSV numbers are enlarged, the TSV effects push the resonances to a higher frequency range. As a small size chip PDN is located closer to the center of a large size chip PDN, the TSV effects are enhanced.

Design of a Miniature Broadband Dime Antenna (소형 광대역 동전형 안테나 설계)

  • 황승진;이종철;장재삼;이문수
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.8 no.1
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    • pp.11-17
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    • 2004
  • In this paper, A miniature broad-band dime antenna is designed. This antenna consists of two stacked circular patches that create two cylindrical slots resonating at two slightly different frequencies, fed by a strategically positioned coaxial prove. To increase the bandwidth of microstrip patch antenna, a configuration of stacked type is used. Furthermore, to reduce the size of microstrip patch antenna and obtain a double resonant behavior, two shorting-walls are used. Experimental results show that the antenna bandwidth is about 26% centered at 5.8㎓ and are close agreement with the calculation results by HFSS 7.0 software.

Atomic Resolution Imaging of Rotated Bilayer Graphene Sheets Using a Low kV Aberration-corrected Transmission Electron Microscope

  • Ryu, Gyeong Hee;Park, Hyo Ju;Kim, Na Yeon;Lee, Zonghoon
    • Applied Microscopy
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    • v.42 no.4
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    • pp.218-222
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    • 2012
  • Modern aberration-corrected transmission electron microscope (TEM) with appropriate electron beam energy is able to achieve atomic resolution imaging of single and bilayer graphene sheets. Especially, atomic configuration of bilayer graphene with a rotation angle can be identified from the direct imaging and phase reconstructed imaging since atomic resolution Moir$\acute{e}$ pattern can be obtained successfully at atomic scale using an aberration-corrected TEM. This study boosts a reliable stacking order analysis, which is required for synthesized or artificially prepared multilayer graphene, and lets graphene researchers utilize the information of atomic configuration of stacked graphene layers readily.