Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1987.07a
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- Pages.429-432
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- 1987
Study of a New LOCOS Process Using Only Thin LPCVD Nitride
LPCVD 질화막 만을 이용한 새로운 LOCOS 공정에 관한 연구
- Kim, Ji-Bum (Gold Star Semiconductor R&D Center) ;
- Oh, Ki-Young (Gold Star Semiconductor R&D Center) ;
- Kim, Dal-Soo (Gold Star Semiconductor R&D Center) ;
- Joo, Seung-Ki (Department of Metallurgical Engineering College of Engineering, Seoul National University) ;
- Choi, Min-Sung (Gold Star Semiconductor R&D Center)
- 김지범 (금성 반도체(주) 연구소) ;
- 오기영 (금성 반도체(주) 연구소) ;
- 김달수 (금성 반도체(주) 연구소) ;
- 주승기 (서울 대학교 공과대학 금속공학과) ;
- 최민성 (금성 반도체(주) 연구소)
- Published : 1987.07.03
Abstract
A new LOCOS (Local Oxidation of Silicon) process using a thin nitride film directly deposited on the silicon substrate by LPCVD has been developed in order to reduce the bird's beak length. SEM studies showed that nitride thickness of 50nm can decrease the bird's beak length down to 0.2um with 450nm field oxide. No crystalline defects are observed around the bird's beak after the Wright etch. A 30% improvement in current density was obtained when this new method was applied to MOS transistors (W/L*2.9/20.4) compared to conventional LOCOS process (bird's beak length=0.7um). Other various electrical parameters improved by this new simple LOCOS process are reported in this paper.
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