Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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The electrical and optical properties of Se-As-Te photoconductor and its application

Se-As-Te 광도전막의 특성 및 응용

  • Park, Sang-Jun (Dept. of Electronics, Kyungpook National University) ;
  • Oh, Sang-Kwang (Dept. of Electronics, Kyungpook National University) ;
  • Choi, Ku-Man (Dept. of Electronics, Kyungpook National University) ;
  • Kim, Ki-Wan (Dept. of Electronics, Kyungpook National University)
  • 박상준 (경북대학교 대학원 전자공학과) ;
  • 오상광 (경북대학교 대학원 전자공학과) ;
  • 최규만 (경북대학교 대학원 전자공학과) ;
  • 김기완 (경북대학교 대학원 전자공학과)
  • Published : 1987.07.03
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Abstract

The photoconductor is made of evaporated amorphous selenium as the base material, doped with arsenic and tellurium to prevent crystallization and to increase the red sensitivity of the amorphous selenium. The four-layered photoconductor of Se-As-Te has good photosensitivity(r=0.9) and high dark resistivity($P_d=10^{12}{\Omega}{\cdot}cm$). therefore, this four-layered photoconductor can be used for the target of color image pick-up tube.

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