수소화된 비정질 실리콘 $n^+-p-p^+$ 태양전지에서 최적기판온도의 결정

Optimum Substrate Temperature for Hydrogenated Amorphous Silicon $n^+-p-p^+$ Cells

  • 이이상 (경희 대학교 물리학과 및 기초 과학 연구소) ;
  • 장진 (경희 대학교 물리학과 및 기초 과학 연구소)
  • Lee, Yi-Sang (Dept. of Physics & Research Inst. for Basic Sciences, Kyung Hee University) ;
  • Jang, Jin (Dept. of Physics & Research Inst. for Basic Sciences, Kyung Hee University)
  • 발행 : 1987.07.03

초록

We report that the optimum substrate temperature to fabricate a-Si:H $n^+-p-p^+$ cell decreases with increasing the boron concentration in the Player. The results can be explained as the dependence of substrate temperature for the relaxation of silicon atoms and the bonded hydrogen concentration in the player.

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