Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1987.07a
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- Pages.546-548
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- 1987
Recrystallization of Phosphorus Ion Implanted Silicon on Insulator(SOI) by RTA Method
절연층상에 인을 주입시킨 실리콘 박막의 RTA 방법에 의한 재결정화
- Kim, Chun-Keun (KAIST, Semiconductor Materials Lab.) ;
- Kim, Hyun-Soo (KAIST, Semiconductor Materials Lab.) ;
- Kim, Yong-Tae (KAIST, Semiconductor Materials Lab.) ;
- Min, Suk-Ki (KAIST, Semiconductor Materials Lab.)
- 김춘근 (한국과학기술원, 반도체재료 연구실) ;
- 김현수 (한국과학기술원, 반도체재료 연구실) ;
- 김용태 (한국과학기술원, 반도체재료 연구실) ;
- 민석기 (한국과학기술원, 반도체재료 연구실)
- Published : 1987.07.03
Abstract
We have studied 1iquid phase regrowth of phosphorus ion implanted silicon films on insulator (SOI) by rapid thermal annealing (RTA) method. Many twin boundaries were observed on the regrown silicon layer and mobility of the layer was increased from
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