전력 VDMOSFT의 $V_{GS}$와 $V_{DS}$ 전압 검출에 의한 온도측정

Temperature Measurement by $V_{GS}$ and $V_{DS}$ Method of Power VDMOSFET.

Double-diffused metal oxide power semiconductor field effect transistors are used extensively in recent years in various circuit applications. The temperature variation of the drain current at a fixed bais shows both positive and negative resistance characteristics depending on the gate threhold voltage and gate-to source bias voltage. In this study, the decision method of the internal temperature measurement by $V_{GS}$ and $V_{DS}$ are presented.