The Characteristics of Photoresist using Inorganic $a-Se_{75}Ge_{25}$

무기질 $a-Se_{75}Ge_{25}$ 을 이용한 포토레지스트의 특성

  • 정홍배 (광운대학 전지재료공학과) ;
  • 허훈 (광운대학 전지재료공학과) ;
  • 김태완 (광운대학 전지재료공학과) ;
  • 문혁 (광운대학 전지재료공학과) ;
  • 송준석 (광운대학 전지재료공학과) ;
  • 김종빈 (조선대학교 전자공학과)
  • Published : 1987.11.20


This paper is investigated on characteristics of photoresist using inorganic a-$Se_{75}Ge_{25}$. The sensitivity of negative photoresist showing insolubility against alkalie solution, with Ag-photodoped, is more prominent than that of positive photoresist used with only a-$Se_{75}Ge_{25}$. It is also showed that the contrast of negative photoresist, ${\gamma}=2.9$, is more prominent than that of positive photoresist, ${\gamma}=1.4$.