Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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"A Study on the formation of Cobalt Silicide and its Growth Rate by Rapid Thermal Annealing(RTA)"

RTA를 이용한 Cobalt Silicide의 형성 및 Growth Rate d에 관한 연구

  • Kang, Eu-S. (Dept. of Electronic Engineering, Chang Ang Univ.) ;
  • Kim, H.W. (Dept. of Electronic Engineering, Chang Ang Univ.) ;
  • Hwang, Ho-J. (Dept. of Electronic Engineering, Chang Ang Univ.)
  • Published : 1988.07.01
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Abstract

The increases in the packing density and the resulting shrinkage of silicon integrated circuit dimensions led to the investigation and successful of the deposited silicide layers as the gate and interconnection and contact metallization. In this paper evaporated Co films on n-Si have been rapid thermal annealed in $N_2$ambient at temperature of $400^{\circ}C-1000^{\circ}C$. The Co silicide formation is characterized by sheet resistance (4PP). Also, silicide growth rate and its reproductivity has been examined by SEM.

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