Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Antireflection Structures and Optical Recording Properties of Te-based Alloy Thin Films

Te계 합금 박막의 Antireflection 구조와 광기록 특성

  • 이현용 (광운대학교 전자재료공학과) ;
  • 최대영 (광운대학교 전자재료공학과) ;
  • 이영종 (광운대학교 전자재료공학과) ;
  • 정홍배 (광운대학교 전자재료공학과)
  • Published : 1988.05.27
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Abstract

This paper reports the properties of antireflection structure and hole formation of Te-based systems. The optical-recording characteristics of metallic recording media are enhanced significantly by incorporating the metal(Al) layer into an antreflection trilayer structure. Due to the interface condition inherent in the design of the trilayer structure, reflectivity from holes is ranked low fraction (<10%). The hole formation is carried by $Ar^+$ Laser(488nm). For 20nsec pulse duration, hole opening power(threschold) of $(Te_{86}Se_{14})_{50}Bi_{50}$ trilayer is lower than that of monolayer that used in this experiment. Hole shapes of the whole sample were clean.

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