대한전기학회:학술대회논문집 (Proceedings of the KIEE Conference)

대한전기학회 (The Korean Institute of Electrical Engineers)
권호 표지

비정질 실리콘 박막 트랜지스터(a-si:HTFT)의 온도의존특성의 수학적인 해석과 모델

Mathematical Model of Temperature Dependent Characteristics of a-si:H Thin Film Transistor

  • Lee, Woo-Sun (Dept. of Electrical Engineering, Chosun University) ;
  • Yoon, Sung-Do (Dept. of Electrical Engineering, Chosun University) ;
  • Kang, Yong-Chul (Dept. of Electrical Engineering, Chosun University) ;
  • Yoo, Byung-Soo (Dept. of Electrical Engineering, Chosun University) ;
  • Lee, Sang-Il (Dept. of Electrical Engineering, Chosun University)
  • 발행 : 1991.07.18
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초록

A new analytical expression for the temperature variation characteristics of hydrogenerated amorphous silicon (a-si:H) thin film transistors, between 223K and 433K, is presented and experimentally virified. The result show that the experimental transfer and output characteristics at several temperatures are easily modeled between $-50^{\circ}C\;and\;90^{\circ}C$. The model is based on three function obtained from the experimental data of $I_D$ versus $V_G$. Theoretical results comfirm the simple form of the model in terms of the device geometry. It was determined that as the temperature increaseed, the saturated drain current increased.

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