Electrical Conduction Chracteristics of ZnO Varistor Fabricated by the Method of 3-Composition Seed Grain

3-성분 종입자법으로 제조된 ZnO 바리스터의 전기전도 특성

  • 김도영 (광운대학교 대학원 전기공학과) ;
  • 장경욱 (광운대학교 대학원 전기공학과) ;
  • 유영각 (광운대학교 대학원 전기공학과) ;
  • 곽두환 (충남전문대학 전기과) ;
  • 이준웅 (광운대학교 공과대학 전기공학과)
  • Published : 1991.10.01

Abstract

The low-voltage ZnO varistor fabricated by a new method with three-composition seed grain are studied. The knee voltage about 5V$\_$0.5[A/$\textrm{cm}^2$]/ for sample #7 among the various samples are observed, and activation energy in the obmic region and trap level in the double sohottky region for each samples are 0.359∼0.450eV and 0.553∼0.620eV, respectively. It is concluded that the change of knee voltage may be caused by trap level in double sohottky region rather than activation energy in the ohmic region.

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