Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A study on the switching character of MOS-GTO and the design of gate drive circuit

MOS-GTO의 스위칭 특성과 Gate Drive 회로 설계에 관한 연구

  • Roh, Jin-Eep (Dept. of Electrical Eng. Chungnam Nat'l Univ.) ;
  • Seong, Se-Jin (Dept. of Electrical Eng. Chungnam Nat'l Univ.)
  • 노진입 (충남대학교 전기공학과) ;
  • 성세진 (충남대학교 전기공학과)
  • Published : 1991.11.22
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Abstract

This paper discribes a study on the switching character of MOS-GTO and the design of gate drive circuit. Chopping power supply converter, synchronious and asyncronious motor speed adjustment, inverter, etc., needs low drive energy "high frequency" switches. To fulfill these need, switches must have rapid switching time and insulated gate control. MOS-GTO structure is well suited to these constraints. The power switch is serial installation of a GTO thyrister and a MOS Transistor. The gate of the GTO is linked to positive pole of the cascode structure via a MOS high voltage transistor and ground via a transient absorber diode. This high performance MOS-GTO assembly considerably increases the strength which facilitate the drive of GTO thyristers.

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