Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)
- 1991.11a
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- Pages.257-260
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- 1991
2-Dimensional Numerical Simulation of Inverted-staggered type Amorphous Silicon TFT
비정질 실리콘 박막 트랜지스터의 2차원적 수치 해석
- Joo, In-Su (Seoul National University) ;
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Han, Min-Koo
(Seoul National University)
- Published : 1991.11.22
Abstract
The current-voltage characteristics of inverted-ataggered type a-Si TFT has been successfully obtained by 2-D simulation using Finite Difference Method. Potential and charge distibutions in a-Si TFT's has been calculated by considering localized states in the forbidden gap. The results of numerical simulation have good agreement with the our experimental data.
Keywords