Dielectrical Properties of ZnO Varistor Fabricated by the Method of 3-Composition Seed Grain

3-성분 종입자법으로 제조된 ZnO 바리스터의 유전특성

  • Kim, D.Y. (Dept. of Elec. Eng. Grad., Kwang Woon Univ.) ;
  • Jeong, I.H. (Dept. of Elec. Eng. Grad., Kwang Woon Univ.) ;
  • Cho, A.H. (Dept. of Elec. Eng. Grad., Kwang Woon Univ.) ;
  • Jang, K.W. (Dept. of Elec. Eng. Grad., Kwang Woon Univ.) ;
  • Lee, J.W. (Dept. of Elec. Eng., Kwang Woon Univ. Elec.)
  • 김도영 (광운대학교 대학원 전기공학과) ;
  • 정일형 (광운대학교 대학원 전기공학과) ;
  • 조안환 (광운대학교 대학원 전기공학과) ;
  • 장경욱 (광운대학교 대학원 전기공학과) ;
  • 이준웅 (광운대학교 공과대학 전기공학과)
  • Published : 1991.11.22

Abstract

The dielectric properties of the ZnO varistor fabricated by the method of 3-composition seed grain was studied. In this paper, we present the C-V charateristic for the specimen. The dielectric constant and disppation which changed with additives may be explained on the basis of the deplation layer; the presence of deplation layer has been inferred by donor and state density obtained from the $1/C^2$ vs. V.

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