Electrical Properties of ITO/TiO$_2$/Se Solar Cell

ITO/TiO$_2$/Se 태양전지의 전기적특성에 관한 연구

  • 문수경 (전남대학교 전기공학과) ;
  • 박현빈 (전남대학교 전기공학과) ;
  • 구할본 (전남대학교 전기공학과) ;
  • 김태성 (전남대학교 전기공학과)
  • Published : 1992.05.01

Abstract

ITO/TiO$_2$/Se solar cell were fabricated by vacuum deposition method, the Se and TiO$_2$were deposited on the ITO/Glass. Prior to the electrical properties of film, the provide Te between the ITO and the Se film were deposited by substrate temperature 20[$^{\circ}C$] and evaporation time 15[min], next time TiO$_2$ were treated by rf-magnetron sputtering in substrate temperature 250[$^{\circ}C$]. Fabricated ITO/TiO$_2$/Se solar cell were as follows : Open Voltage V$\_$oc/=848[mV], Short Circuit Current I$\_$sc/=10.79[mA/$\textrm{cm}^2$]. Fill Factor FF=0.518, energy conversion efficiency η=4.74[%] under the illumination of AM 1.

Keywords