Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 1992.11a
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- Pages.90-93
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- 1992
Electricial properties of oxynitride films prepared by furnace oxidation in $N_2O$
$N_2O$ 가스에서 형성된 oxynitride막의 전기적 특성
- Bae, Sung-Sig (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Seo, Yong-Jin (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Tae-Hyung (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Kim, Chang-Il (Dept. of Electrical Eng., Chung-Ang Univ.) ;
- Chang, Eui-Goo (Dept. of Electrical Eng., Chung-Ang Univ.)
- Published : 1992.11.07
Abstract
In this paper, MOS characteristics of gate dielectrics prepared by furnace oxidation of Si in an
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