Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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A Study on Planarized Formation of Inter-Level Dielectric Films by Laser CVD Method

Laser CVD법에 의한 평탄화 층간 절연막 형성에 관한 연구

  • Lee, K.S. (Dept. of Electrical Eng. Korea Univ.) ;
  • Park, G.Y. (Dept. of Electrical Eng. Korea Univ.) ;
  • Lee, H.S. (Dept. of Electrical Eng. Korea Univ.) ;
  • Houng, S.H. (Dept. of Electrical Eng. Korea Univ.) ;
  • Huh, Y.J. (Dept. of Electrical Eng. Korea Univ.) ;
  • Sung, Y.K. (Dept. of Electrical Eng. Korea Univ.)
  • 이계신 (고려대학교 공과대학 전기공학과) ;
  • 박근영 (고려대학교 공과대학 전기공학과) ;
  • 이한신 (고려대학교 공과대학 전기공학과) ;
  • 홍성훈 (고려대학교 공과대학 전기공학과) ;
  • 허윤종 (고려대학교 공과대학 전기공학과) ;
  • 성영권 (고려대학교 공과대학 전기공학과)
  • Published : 1993.07.18
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Abstract

$SiO_2$ and SiON films are formed by Laser CVD for inter-level dielectrics in submicron VLSI. This technique is noticeable that film formation can be done at low temperatures, below $300^{\circ}C$ with less damage. An ArF Excimer Laser with wave length of 193nm is used to excite and dissociate reactant gases. After film formation growth rate, refractive index, I-V curve, and step coverage characteristics of the films were evaluated.

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