한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)
- 한국전기전자재료학회 1993년도 추계학술대회 논문집
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- Pages.55-59
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- 1993
안티몬 박막을 도우핑소스로 찬 다결정실리콘 도우핑
Polycrystalline silicon doping using antimony thin film as doping source
초록
In this study, we developed new process for doping poly-Si film. Sb(antimony) thin film was used as doping source. Sb was evaporated on poly-Si film deposited by LPCVD fallowed by annealing. We investigate sheet resistance variation with annealing temperature and time. Finally we adapted this process to poly-Si TFT fabrication.
키워드