저온 다결정 실리콘 박막의 성장 및 다결정 실리콘 박막트랜지스터에의 응용

The Growth of Low Temperature Polysilicon Thin Films and Application to Polysilicon TFTs

  • 하승호 (수원대학교 전자재료공학과) ;
  • 이진민 (수원대학교 전자재료공학과) ;
  • 박승희 (수원대학교 전자재료공학과) ;
  • 김영호 (수원대학교 전자재료공학과)
  • 발행 : 1993.11.01

초록

The charateristics of low temperature poly-Si thin films with different growth condition were investigated and poly-Si TFTs were fabricated on solid phase crystallized (SPC) amorphous silicon films and as-deposited poly-Si films. The performance of devices fabricated on the SPC amorphous silicon films was shown to be superior to that of devices fabricated on as-deposited poly-Si films. It was found that the characteristics of low-temperature poly-Si thin films such as surface roughness, crystal texture and grain size strongly influenced the poly-Si TFT performance.

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