Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
권호 표지

The Back-Bias Effect on the Breakdown Voltage of SOI Device

Back-bias 효과에 의한 SOI소자의 항복전압 특성.

  • Kim, Han-Soo (Department of Electrical Engineering, Seoul National University) ;
  • Choi, Yearn-Ik (Department of Electronics Engineering, Ajou University) ;
  • Han, Min-Koo (Department of Electrical Engineering, Seoul National University)
  • Published : 1993.11.26
Download PDF
⟨ Previous Next ⟩

Abstract

The back bias effect on the breakdown voltage of SOI $p^+$-n diode is investigated. The breakdown voltage of the SOI $p^+$-n diode increases with the applied back bias. When the cathode electrode is used as a back bias, it is necessary to put the dielectric material between the Si-substrate and the bottom cathode electrode.

Keywords