Electrical Characteristics of PZT Ferroelectric Thin Films

PZT 강유전 박막의 전기적 특성

Pb(Zr, Ti)$O_3$ ferroelectric thin layers were deposited onto Pt/$SiO_2$/Si substrates by Sol-Gel processing and annealed by RTA at $600^{\circ}C$ for $20{\sim}30\;sec$. microstructure of the films was examined by XRD and SEM analysis. Electrical properties of PZT thin films with different Zr/Ti ratio yield $P_r$ ranging $10{\sim}21{\mu}C/cm^2$, $E_c$, ranging $37.5{\sim}137.5\;kV/cm$, switching times faster than 180nsec, and leakage current about $20{\mu}A/cm^2$. The film was endured about $10^{10}$ fatigue cycles.