Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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scale-down of the Nonvolatile MONOS Memory Devices for the 5V-Programmable E$^2$PROM

5V-Programmable E$^2$PROM을 위한 비휘발성 MONOS 기억소자의 Scale-down

  • 이상배 (광운대학교 전자재료공학과) ;
  • 이상은 (광운대학교 전자재료공학과) ;
  • 김선주 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • Published : 1994.11.01

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Abstract

The characteristics of the nonvolatile MONOS memory devices as the nitride thickness is scaled down while maintaining constant tunneling oxide thickness and blocking oxide thickness have been investigated in order to obtain the 5V-programmable E$^2$PROM. We have found that 1V memory window for a 5V programming voltage and 10 year data retention can be achieved in the scaled MONOS memory devices with a 50 blocking oxide, a 57 nitride and a 19 tunneling oxide.

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