한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Scaled MONOS 비휘발성 반도체 기억소자의 기억트랩 조사

Investigation on the Memory Traps in the Scaled MONOS Nonvolatile Semoconductor Memory Devices

  • 이상은 (광운대학교 전자재료공학과) ;
  • 김선주 (광운대학교 전자재료공학과) ;
  • 이상배 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • 발행 : 1994.11.01

⟨ 이전 논문 다음 논문 ⟩

초록

In this paper we investigate the characteristics of switching and memory traps in sealed MONOS nonvolatile memory devices with different nitride thicknesses. We have demonttrated flatband voltage shift of 1V with 5V programming voltage. By fitting the experimental observations with theoretical calculations, trap density and capture cross section of memory trap at the nitride-blocking oxide interface are estimated to be 1.0${\times}$10$\^$13/ cm$\^$-2/ and 8.0${\times}$10$\^$14/ cm$\^$-2/

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