한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

Charge Pumping 기술을 응용한 열화된 SONOSFET 비휘발성 기억소자의 Si-SiO$_2$ 계면트랩에 관한 연구

A Study on the Si-SiO$_2$Interface Traps of the Degraded SONOSFET Nonveolatile Memories with the Charge Pumping Techniques

  • 김주열 (광운대학교 전자재료공학과) ;
  • 김선주 (광운대학교 전자재료공학과) ;
  • 이성배 (광운대학교 전자재료공학과) ;
  • 이상배 (광운대학교 전자재료공학과) ;
  • 서광열 (광운대학교 전자재료공학과)
  • 발행 : 1994.11.01

⟨ 이전 논문 다음 논문 ⟩

초록

The Si-SiO$_2$interface trpas of the degraded short-channel SONOSFET memory devices were investigated using the charge pumping techniques. The degradation of devices with write/erase cycle appeared as the increase of the Si-SiO$_2$interface trap density. In order to determine the capture cross-section of the interface trap. I$\_$CP/-V$\_$GL/ characteristic curves were measured at different temperatures. Also, the spatial distributions of Si-SiO$_2$interface trap were examined by the variable-reverse bias boltage method.

키워드